350MW Search Results
350MW Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LM4819MBD/NOPB |
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350mW Audio Power Amplifier with Shutdown Mode |
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LM4818MX/NOPB |
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350mW Audio Power Amplifier with Shutdown Mode 8-SOIC -40 to 85 |
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LM4819MMX/NOPB |
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350mW Audio Amplifier with Shutdown Mode 8-VSSOP -40 to 85 |
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LM4819MM/NOPB |
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350mW Audio Amplifier with Shutdown Mode 8-VSSOP -40 to 85 |
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LM4819MX/NOPB |
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350mW Audio Amplifier with Shutdown Mode 8-SOIC -40 to 85 |
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350MW Price and Stock
Eaton Cutler-Hammer E2KW3350MWW1200V MINING MCCB 3P 350A MAG ONLY 1250-2500A TRIP RANGE |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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E2KW3350MWW | Bulk | 2 Weeks | 1 |
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ROHM Semiconductor RK7002BMT116MOSFETs 2.5V Drive Nch MOSFET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RK7002BMT116 | Reel | 1,299,000 | 3,000 |
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Vishay Intertechnologies 1N4148W-E3-08Small Signal Switching Diodes 100V Io/150mA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1N4148W-E3-08 | Reel | 342,000 | 3,000 |
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Nexperia PMBT3946YPN,115Bipolar Transistors - BJT SOT363 40V .2A NPN/PNP BJT |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PMBT3946YPN,115 | Reel | 93,000 | 3,000 |
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Vishay Intertechnologies 2N7002K-T1-GE3MOSFETs 60V Vds 20V Vgs SOT-23 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N7002K-T1-GE3 | Reel | 87,000 | 3,000 |
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350MW Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LM4819 LM4819 350mW Audio Power Amplifier with Shutdown Mode Literature Number: SNAS133C LM4819 350mW Audio Power Amplifier with Shutdown Mode General Description Key Specifications The LM4819 is a mono bridged power amplifier that is capable of delivering 350mWRMS output power into a 16Ω load |
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LM4819 LM4819 350mW SNAS133C 350mWRMS | |
ray 40Contextual Info: Plug-In RAY-3+ RAY-3 Frequency Mixer Level 23 LO Power +23 dBm 0.07 to 200 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • excellent conversion loss, 5.53 dB typ. |
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350mW 2002/95/EC) ray 40 | |
28438
Abstract: M121747
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350mW 2002/95/EC) 28438 M121747 | |
DEVICE MARKING CODE table
Abstract: BZX84C47 BZX84C43 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A
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BZX84C43 BZX84C51 350mW BZX84C47 OT-23 OT-23, J-STD-020A DEVICE MARKING CODE table 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A | |
MMBZ5223B
Abstract: Zener Diode SOT-23 marking kh5 MMBZ5221B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B
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MMBZ5221B MMBZ5259B 350mW MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B Zener Diode SOT-23 marking kh5 MMBZ5229B MMBZ5230B MMBZ5231B | |
Contextual Info: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and |
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350mW DO-35 MIL-STD-202, DO-35 | |
Contextual Info: New Au d i o I n t e r fa c e I C A N 2 9 0 6 F J M • Overview 12 22 34 33 11 0.40 0.10 SEATING PLANE 11 44 0.48 5.00±0.10 12 44 (1.10) 0. 1 22 ■ Features ●Speaker amplifier. • BTL amplifier (350mW 8Ω Vcc=3.3V) ●Built-in power-save function. |
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350mW AN2906FJM | |
all type zener diode code voltage
Abstract: CMPZ4625 CMPZ4616 5 volts ZENER DIODE zener diode marking code 30 CMPZ4614 CMPZ4615 CMPZ4617 CMPZ4618 CMPZ4619
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CMPZ4614 CMPZ4627 350mW OT-23 200mA CMPZ4622* CMPZ4623 CMPZ4624* CMPZ4625 all type zener diode code voltage CMPZ4625 CMPZ4616 5 volts ZENER DIODE zener diode marking code 30 CMPZ4614 CMPZ4615 CMPZ4617 CMPZ4618 CMPZ4619 | |
Contextual Info: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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KST5551 350mW OT-23 2N5551 | |
MMBT3906 UTCContextual Info: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) |
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MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 MMBT3906 UTC | |
T9SV1K15-12Contextual Info: General Purpose Relays Power Relays Potter & Brumfield Power PCB Relay T9S Solar n 1 pole 35A, 1 form A NO contact gap >1.5mm n 350mW hold power n Ambient temperature up to 85°C at 35A n The appliance is able to meet VDE V 0126-1-1 n Product in accordance to IEC 60335-1 |
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n350mW nEN61095: 2500Vrms 4000Vrms E22575 T9SV1K15-12 12VDC T9SV1K15-12 | |
Contextual Info: MMBD4448H 0.25A Surface-mount Switching Diode Voltage range 80 Volts 350mW Power Dissipation SOT-23 FEATURES 0.020 0.51 0.015(0.37) Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications |
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MMBD4448H 350mW OT-23 OT-23, | |
Contextual Info: Product specification BZX84C27 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
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BZX84C27 OT-23 350mW | |
Contextual Info: Product specification BZX84C7V5 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
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BZX84C7V5 OT-23 350mW | |
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Contextual Info: Product specification BZX84C4V3 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
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BZX84C4V3 OT-23 350mW | |
BZX84C18Contextual Info: Product specification BZX84C18 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
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BZX84C18 OT-23 350mW BZX84C18 | |
Contextual Info: Product specification BZX84C3V3 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
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BZX84C3V3 OT-23 350mW | |
Contextual Info: Product specification BZX84C16 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
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BZX84C16 OT-23 350mW | |
Contextual Info: Product specification BZX84C2V4 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
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BZX84C2V4 OT-23 350mW | |
Contextual Info: Product specification BZX84C11 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
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BZX84C11 OT-23 350mW | |
Contextual Info: Product specification BZX84C20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
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BZX84C20 OT-23 350mW | |
65060Contextual Info: Coaxial ZMY-2+ ZMY-2 Frequency Mixer Level 23 LO Power +23 dBm 10 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • low conversion loss, 6.89 dB typ. • high isolation, 40 dB typ. L-R, 35 dB typ. L-I |
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350mW 2002/95/EC) 65060 | |
LM4819
Abstract: LM4819M LM4819MM M08A
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LM4819 350mW LM4819 350mWRMS 300mWRMS LM4819M LM4819MM M08A | |
ZFY-11-S
Abstract: ZFY-11
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ZFY-11 350mW ZFY-11-S ZFY-11-S ZFY-11 |