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    Visual Communications Company 1091MX7-24V

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    Visual Communications Company 6091MX7-24V

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    1MX72 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W2Z1M72SJ Preliminary* 72Mb, 1Mx72 Synchronous Pipeline Burst NBL SRAM FEATURES DESCRIPTION Fast clock speed: 225, 200, 166 and 150MHz The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an


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    PDF W2Z1M72SJ 1Mx72 150MHz 1Mx36 W2Z1M72SJ35ES W2Z1M72SJ38ES W2Z1M72SJ28BC W2Z1M72SJ30BC W2Z1M72SJ35BC

    IBM REV 2.8

    Abstract: 4620 IBM11M4730C4M
    Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1735B 1M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Extended Data Out Page Mode DIMM • Performance: -60 -70 RAS Access Time 60ns 70ns CAS Access Time 20ns 25ns


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    PDF IBM11M4730C4M E12/10, IBM11M1735B 1Mx72 104ns 124ns IBM REV 2.8 4620

    Untitled

    Abstract: No abstract text available
    Text: IBM11M1730BB1M x 72 E10/10, 3.3V, Au. IBM11M1730B IBM11M1730BB 1M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time


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    PDF IBM11M1730BB1M E10/10, IBM11M1730B IBM11M1730BB 1Mx72 110ns 130ns

    1720b

    Abstract: No abstract text available
    Text: IBM11M1720B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: - • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 Buffered inputs except RAS, Data


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    PDF IBM11M1720B 1Mx72 110ns 130ns 50H4346 IBM11M1720B 000HH1B 1720b

    IBM 1Mx4

    Abstract: 1MX16
    Text: 4. 8/4 Byte DIMM CROSS REFERENCE 8 Byte DIMM TYPE 1Mx64 P a rity Voltage 5V Com pany SEC 3.3V NEC Hitachi SEC 1Mx72 ( P a r ity ) 5V SEC 1 Mx72 (E C C ) 5V IBM SEC 3.3V NEC IBM Hitachi SEC 2M x64 ( P a r ity ) 2M x72 ( P a r ity ) 2M x72 (E C C ) 5V 3.3V


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    PDF 1Mx64 364C120C KMM364C124A C-421000AA64 HB56A164EJ 364V120C 364V124A 372C122C 372C125A 05H0902 IBM 1Mx4 1MX16

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E1 24BT KMM372E1 24 BT Fast Page with EDO Mo de 1M x 72 DRAM DIMM with ECC using 1 Mx16 & 1 Mx4, 1K Refresh, 5V G E N E R A L DESCRI PTION F E A TU RE S The Samsung KM M372E124BT is a 1Mx72bits Dynamic RAM • Part Identification high density memory module. The Samsung KM M 372E124BT


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    PDF KMM372E1 M372E124BT 1Mx72bits 372E124BT 1Mx16bits 400mil 300mil 16bits 48pin

    Untitled

    Abstract: No abstract text available
    Text: IBM11M1730BA 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 1Mx72 Fast Page Mode DIMM • System Performance Benefits: - Buffered inputs except RAS, Data • Performance:


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    PDF IBM11M1730BA 1Mx72 110ns 130ns 64G1555 MMDL09DSU-00 IBM11M1730BA MMDL09DS

    Untitled

    Abstract: No abstract text available
    Text: IBM11M1720B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: • 1Mx72 Fast Page Mode DIMM - • Performance: Buffered inputs except RAS, Data


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    PDF IBM11M1720B 1Mx72 110ns 130ns

    L50H

    Abstract: No abstract text available
    Text: IB M 1 1 M 1 7 3 0 B IB M 1 1 M 1 7 3 0 B B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 1Mx72 Fast Page Mode DIMM - • Performance: -60


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    PDF 1Mx72 110ns 130ns IBM11M1730B IBM11M1730BB 50H4347 SA14-4607-02 L50H

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KM M 372V1 24B T K M M 3 7 2 V 1 2 4 B T with Fast Page Mode 1M x 72 DRAM DIMM with ECC using 1 Mx16 & 1 Mx4, 1K Refresh , 3.3V G E N E R A L DESCRI PTI ON F E A TU RE S The Samsung KMM 372V124BT is a 1Mx72bits Dynamic RAM • Part Identification


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    PDF 372V1 372V124BT 1Mx72bits 300mil 16bits 48pin 168-pin M372V124BT

    l06d

    Abstract: No abstract text available
    Text: IB M 1 1 M 1 7 2 0 B A 1M x 72 D R A M M O D U LE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for byte-write parity applications • 1Mx72 Fast Page Mode DIMM • System Performance Benefits: • Performance:


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    PDF 1Mx72 110ns 130ns 64G1558 MMDL06DSU-00 l06d

    Untitled

    Abstract: No abstract text available
    Text: DR A M M O D U L E KM M 374F1 24B J1 KM M 374F1 24B J1 ED O M o d e wi t h ou t buffer 1M x 72 DRAM DIMM with ECC using 1 M x16 & 1 Mx4, 1K Refresh, 3.3V G E N E R A L DESCRIPTION FE A TU R ES The Samsung KMM374F124BJ1 is a 1Mx72bits Dynamic RAM Part Identification


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    PDF 374F1 KMM374F124BJ1 1Mx72bits 1Mx16bits 400mil 300mil 168-pin

    KM44V1004CJ

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F124AJ KMM372F124AJ with EDO Mode 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V G EN ERA L DESCRIPTIO N FEATURES The Samsung KMM372F124AJ is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F124AJ consists of four CMOS


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    PDF KMM372F124AJ KMM372F124AJ 1Mx72 1Mx16 1Mx16bit 400mil 300mil 16bits KM44V1004CJ

    Samsung Capacitor sse

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372V120CJ/CT KMM372V120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 372V120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The S am su ng


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    PDF KMM372V120CJ/CT 1Mx72 KMM372V120CJ/CT 372V120C 48pin 168-pin KMM372V120C 20nsthat Samsung Capacitor sse

    1Mx72

    Abstract: No abstract text available
    Text: IBM11M1735B 1M X 72 DRAM MODULE Features • Optimized for ECC applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: • 1Mx72 Extended Data Out Page Mode DIMM • Performance: -60 tRAC RAS Access Time


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    PDF IBM11M1735B 1Mx72 104ns 124ns Pack54

    Untitled

    Abstract: No abstract text available
    Text: KMM372V122CJ/CT DRAM MODULE KM M372V122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM372V122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V122C consists of sixteen CMOS


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    PDF KMM372V122CJ/CT M372V122CJ/CT 1Mx72 KMM372V122C KMM372V122C-7 300mil 110ns 130ns

    Untitled

    Abstract: No abstract text available
    Text: KMM372V120CJ/CT DRAM MODULE KMM372V120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V120C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V120C consists of eighteen


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    PDF KMM372V120CJ/CT KMM372V120CJ/CT 1Mx72 KMM372V120C 300mil 48pin 168-pin cycles/16ms 1000mil)

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F124AJ KMM372F124AJ with EDO Mode 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F124AJ is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F124AJ consists of four CMOS


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    PDF KMM372F124AJ KMM372F124AJ 1Mx72 1Mx16 1Mx16bit 400mil 300mil 16bits

    KM44C1000CJ

    Abstract: No abstract text available
    Text: KMM372C122CJ/CT DRAM MODULE KMM372C122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V FEATURES G EN ERA L D ESC RIPTIO N The Samsung KMM372C122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C122C consists of sixteen CMOS


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    PDF KMM372C122CJ/CT KMM372C122CJ/CT 1Mx72 KMM372C122C 300mii 48pin KM44C1000CJ

    KMM364E124AJ-6

    Abstract: CT-17 AS5T KMM372V213AJ KMM364C1 CT55H
    Text: 1. INTRODUCTION 8 Byte DIMM Fast Page Mode Ì 5V 1Mx64 1Mx72 V— KMM364C120CJ/CT-5 H KMM364C120CJ/CT-6 ' H KMM364C124AJ-6 H KMM364C124AJ-7 T- ! KMM372C120CJ/CT-5 H KMM372C120CJ/CT-6 — I KMM372C120CJ1/CT 1-5 H KMM372C120CJ1/CT1-6 — I KMM372C122CJ/CT-5


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    PDF 1Mx64 1Mx72 KMM364C120CJ/CT-5 KMM364C120CJ/CT-6 KMM364C124AJ-6 KMM364C124AJ-7 KMM372C120CJ/CT-5 KMM372C120CJ/CT-6 KMM372C120CJ1/CT KMM372C120CJ1/CT1-6 KMM364E124AJ-6 CT-17 AS5T KMM372V213AJ KMM364C1 CT55H

    EH18

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372C120CJ/CT KMM372C120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 372C 120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The tRAC tCAC 18ns


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    PDF KMM372C120CJ/CT 1Mx72 KMM372C120CJ/CT 48pin 168-pin KMM372C120C 110ns 130ns KMM37 EH18

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F124BJ KMM372F124BJ Fast Page with EDO Mode 1M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F124BJ is a 1Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F124BJ


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    PDF KMM372F124BJ KMM372F124BJ 1Mx16 1Mx72bits 1Mx16bits 400mil 300mil 16bits

    1314E

    Abstract: No abstract text available
    Text: IB M 1 1 N 1 6 4 5 L IB M 1 1 N 1 7 3 5 Q 1 M x 6 4 /7 2 D R A M M o d u le Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • Optimized for byte-write, non-parity, or ECC applications. • 1 Mx64, 1Mx72 Extended Data Out Page Mode


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    PDF 1Mx72 SA14-4630-05 1314E

    Untitled

    Abstract: No abstract text available
    Text: IBM11M1730B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 Wc RAS Access Time 60ns 70ns tcAC CAS Access Time 20ns 25ns w Access Time From Address 35ns 40ns tRC


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    PDF IBM11M1730B 1Mx72 110ns 130ns