1N 414 B Search Results

Contextual Info: 1989963 CENTRAL SEMICONDUCTOR TE 92D 0 0 414 ]>E|nflnt3 DGDDMm eswfie&fi I. D 'f- 0 -o 7 5 " e@Ep. Central 1N771, A 1N772, A ssmiœndustor Corp. Central Semiconductor Corp. Central Semiconductor Corp. 1N 77 3, A . 1N77^t* A 1N775 GERMANIUM DIODE JEDEC D0-7 CASE

1.5 KE 130 CA

Abstract: 1.5KE150CP 180ca ke 400 ca 4.5 ke 160 p zt 213 1N5641 ke160p
Contextual Info: Æ 7 SGS-THOMSON Ä7# «03 [I[Li §ïrô»[](gS GENERAL PURPOSE & INDUSTRIAL PROTECTION TRANSIENT VOLTAGE SUPPRESSORS «TRANSIL» Type 'RM @ VRM max @ V(BR * (V) !r V(CL) @ Ipp «T max max 1 ms expo Bidirec­ tional Unidirec­ tional 1.5 (V) min nom max kW I 1 ms expo.

P6KE400cP

Abstract: IN6105 P6KE440P IN6116A CB431 U1680 P6KE280CP 180C P6KE160CA P6KE170CP
Contextual Info: TRANSI L T R A N S IE N T V O L T A G E S U P P R E S S O R S " T R A N S IL " c Type* •rm í V r m B id irec­ tional U n id irec­ tional 600 W 1 ms expo. 0 P6KE 160P P6KE 160A 0 P6 K E 1 7 0 P P6KE 170A O P6KS180P P6KB 180A 0 P6KE 200P P6KE 200A P6KE 220P

BAV54-30

Abstract: 1N4148F BAV54-70 35P4 BAV54 1n4152f 4148f BAY68 BAV54-100 BAW 43
Contextual Info: Silicon signal diodes * High speed switching Diodes de signa! au silicium Type - Case V B oitier V *0 Im A) v(Vp) / / max max max r V rm T a m b 2 5 °C Commutation rapide ' «F (m A ) IR ,/ V r ( n A ) / (V ) 'R / v R <mA ) / (V ) C t rr if D R S 75 tp F)

6v8a

Abstract: BZW07-27 diode P6KE 5KE400A 6276A diode PFZ 15A KE 170A BZW06-102 BZW06-105 BZW06-105B
Contextual Info: transient voltage suppressors «TRANSIL» '«!> THOMSON-CSF diodes de protection «TRANSIL» Types Ir M@Vr M Unidirec­ tional 600 W N N N N N N N N N N N N N N N N N N N N N N N Bidirec­ tional / BZW06-97V2 BZW06-102 BZW06-105 BZW06-111 BZW06-121 BZW06-128

5011N

Abstract: IC la 4148 1N44 wm9 05
Contextual Info: TY P ES IN 4148 WM9 1N4446 THRU 1N4449 SILICON SWITCHING DIODES B U L L E T IN N O . D L S 7 3 9 2 6 9 , O C T O B E R 1 9 6 6 - R E V IS E D M A R C H 197 3 FA ST SWITCHING DIODES Rugged Double-Plug Construction • Electrical Equivalents: 1N4148 . . . 1N914 . . . 1N4531

DO-213AB footprint

Abstract: LL4739A BKC Semiconductors LL4735A
Contextual Info: MELF-SMD 1 Watt LL4729A ILL4729A Zener Diodes thru LL4764A Use Advantages Used where low cost and space are important. Cost effective replacement for plastic SMB zener diodes. Occupies the same footprint as SMB, no PC board rework. LL-41 MELF vs. SMB - savings of up to 50% are possible.

IN4733A

Abstract: in4756a IN4746A IN4749A IN4733 1N4738A ITT 1N4742A JEDEC in 4742A IN4734A IN4730A
Contextual Info: 1N 4728A thru 1N 4764A P L A S T IC Microsemi Corp. SILICON 1 WATT ZEN ER DIODES FEATURES • 3.3 THRU 100 VOLT ZENER VOLTAGE RANGE • HIGH SURGE CURRENT RATING 0.107 , 2 718 'M A X IM U M R A T IN G S Junction and Storage Temperature: -65°C to +200°C DC Power Dissipation: 1 Watt

in 4749A

Contextual Info: ZENER DIODES, GLASS PACKAGE, GENERAL PURPOSE 1 W a ft JEDEC Part Number Nominal Maximum Zaire r Zener Zerter Voltage Test Impedance Current at Maximum Knee Impedance Maximum Reverse Currant at V 2 S»C Maximum: Maximum Zener i l i i i i i ! Package Current

T 4148

Abstract: n4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288
Contextual Info: A E G CORP 17E D TTSUHFIUMìSIIIiO electronic CtealcveTechna'ogies o a a m a t a o c n a a i 5 • 1 N 4148 - 1 N 4 1 4 9 - 1 N 4446 1 |M 4447 • 1 N 4 44 8 -1 N 4449 Silicon Epitaxial Planar Diodes A pplication s: Extreme fast switches Features: • •

IN753

Abstract: IN751 IN756 1N4335 IN4372 IN759 MICROSEMI 1N746A JANTX IN750 ln741 IN747
Contextual Info: 1 1 .0 12.0 13.0 14.0 15.0 17.0 19.0 * rs o co i n cm H O O O O O O O O o o o CM CMCMcrj «O Ps 00 oi o cm co in io oo o cm^ rs 30.0 33.0 36.0 — Diode types presently available from Microsemi Corporation are shown in bold type. 8 .0 10.0 29.0 20% 3 7 .0

Contextual Info: DL4728 thru DL4764 SILIC O N PLAN AR PO W ER Z E N E R DIODES Cathode Mark fo r use in s ta b ilizin g and clipp ing circu its w ith high pow er rating. S tan da rd Z e n e r vo lta g e to e ra n ce is 610% . Add 0 2 . 55 0 2 . 35 suffix "A " fo r 65% to le ra n ce . O th er to le ra n ce s a va ilab le

4728a

Abstract: N4749A
Contextual Info: N N D 1 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 4728 thru 1 1 WATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES 4764 MAXIMUM RATINGS O pe rating T e m pe ratu re: S to ra g e T e m p e ra tu re : DC Pow er D issipa tion: P ow er D erating:

Contextual Info: r 16 15 M 12. 2 2 -WAY FEMALE HOUSING 22-poliges Buchsengehoeuse O P E L •PART -N O . ZF W22-I, FCI -NO II 1 2 9 10 8 13-WAY FEMALE HOUSING: CAVITY-NO. 14 TO 22 CLOSED I’BLIND C A V I T I E S ’! I 3 -p o I •ges B u c h s e n g eh o e u s e : K o m m e r -N r . 14 bi s 22 geschlossen ’B I i n d k o m m e m ’I

Contextual Info: 1N4728 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N4 7 6 4 D 1 W ATT HERM ETICALLY SEALED G LASS SILIC O N ZEN ER DIODES MAXIMUM RATINGS * O p e ra tin g T e m perature: -6 5 ° C to + 2 0 0 °C S to ra g e T e m p e ra tu re : -6 5 ° C to + 2 0 0 °C

DIAGRAM IC AN7168

Contextual Info: AN7168 AN7168 Dual 5.7W Audio Power Amplifier • Description T h e A N 7168 is a m onolithic integrated circuit designed for d u a l 5 .7 W audio p o w e r am p lifier. S te re o o p e ra tio n is p ossible due to the 2 built-in am plifiers and to g eth er w ith

Contextual Info: 6 3 6 7 2 5 5 M O T O R O L A SC D I O D E S / O P T O Tt »F|b3b7ESS _ r n - n _ 1N935,A,B MOTOROLA thru S E M IC O N D U C T O R TECHNICAL DATA i - □ 0 7 7 cn 7 1N939,A,B s | l) a ( a S h e e t 5; i TEMPERATURECOMPENSATED SILICON ZENER

Contextual Info: DO-41 glass 1 Watt Zener Diodes 1 N 4729A thru 1N 4764A Use Advantages Ideal for use as low cost, general purpose regulators and protection devices. Used in hostile environments where long term reliability is important. Competitive replacement for plastic DO-41 zener diodes.

Contextual Info: 20 _ 1.132 _ [2 8.75] NOTES: _ 0566 _ [1458] nn n 1. PRESS FIT LEGS 0.120- LONG0.062 [1.57] MINIMUM PCB THICKNESS FOR SINGLE SIDED USE. 0.118 [3.00] MINIMUM PCB THICKNESS FOR BELLY TO BELLY USE. o 2. MATERIAL: COPPER ALLOY PLATING: NONE o x3 SEE NOTE 4 e

DO-41

Contextual Info: ADVANI OERLIKON/ SEMICOND 3bE D 02blb4fl OOOOODÖ b D S E L I T -O l-O l J SILICON DIODES S E M IC O N D U C T O R S e One-watt silicon zener diodes Vz TYPE /IN /IN ✓IN /IN /IN /IN ✓ IN ''IN ✓IN V4N ,1N /IN /IN /IN ✓ IN / IN ✓ IN ' IN /IN / IN

A/A/78M05 RN

Contextual Info: 3 -TER M IN A L POSITIVE VOLTAG E REGULATOR NJM78M00 Th e NJM78M00 series o f 3-Terminal M edium Current Positive V olta g e Regfulators is constructed using the N ew JR C Planar epitaxial process. These regulators em ploy internal current-limiting, thermal-shutdown and safe-area compensation

EM 328

Abstract: 1N5149A
Contextual Info: tV J A N S tV 1N6103-1N6137 1N6139-1N6173 1N6103A-1N6137A 1N6139A-1N6173A Microsemi Corp. $T+ \}>fj'otfvc*oeri\ SANTA A N A , CA For mure inform ation call' 7M FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR HOST CRITICAL CIRCUITS. • TRIPLE LAYER PASSIVATION.

LM 344 H

Contextual Info: OUTLINES OUTLINE 101 OUTLINE 102 .065 OUTLINE 103 OUTLINE 104 PULSAR MICROWAVE CORPORATION 48 INDUSTRIAL WEST - CLIFTON, NEW JERSEY 07012 PAGE 72 PHONE 201 779-6262 - FAX (201) 779-2727 PULSAR MICROWAVE CORPORATION 48 INDUSTRIAL WEST - CLIFTON, NEW JERSEY 07012

332 6V8

Abstract: 237 6V8 BZW07-27 BZW06-154 bzw06 BZW06-342 BZW04-188 BZW04-188B BZW04-202 BZW04-202B
Contextual Info: f\ transient voltage suppressor «TRANSIL» utilisations utilisations des diodes de protection «TRANSIL» t h o m s o n -c s f Recom m ended u tilis a tio n s Utilisations recommandées Types General purpose Usage général N e tw o rk p ro te ctio n Protection pour