1N4531 Search Results

1N4536

Abstract: 1n4531
Contextual Info: TYPES 1N4531 THRU 1N4534, 1N4536 SILICON SWITCHING DIODES B U L L E T I N N O . D L -S 7 3 9 7 7 4 , M A R C H 1 9 6 7 - R E V I S E D M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents 1N4531 . . . 1N4148 . . . 1N914

transformer prv

Abstract: spark gap 1200v 4ja42ieh20abi 1N4532 SCR Handbook, General electric 1N4529 silicon controlled rectifier 1N4530 1N4531 1N4536
Contextual Info: CONTROLLED AVALANCHE I Silicon Rectifier 35A Avg. 1N4529-30 I 1N4531 SEE PAGE 205 1N4532-34 SEE PAGE 262 1N4536 SEE PAGE 205 Up to 1200V CONTROLLED AVALANCHE RECTIFIERS FROM GENERAL ELECTRIC Feature These Advances in Silicon Rectifier Diode Applications: Self-protection against norm al voltage transients. D issipates up to 12,000 w atts

1N4447-A

Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

1N4532

Abstract: IN4532 S0068 1N4531 IN4531 IR 10D DIODE
Contextual Info: Philips Semiconductors Product specification High-speed diodes 1N4531 ; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leadedglass SOD68 DO-34 package The 1N4531, 1 N4532 are high-speed switching diodesfabricated in planar technology, and encapsulated in hermetically sealed leaded glass

1N4532

Abstract: 1N4531
Contextual Info: • ^ 5 3 1 3 1 □Q2bci0b Til ■ APX N AMER PHILIPS/DISCRETE 1N4531 1N4532 blE T> HIGH-SPEED SILICON DIODES Diodes in the sub-m iniature DO -34 envelope intended fo r fast logic and general purpose applications. Because o f th e ir small size the diodes are especially suitable fo r m o u n tin g in m in ia tu re assemblies e.g.

9364

Abstract: 175C 1N4531
Contextual Info: B K C INTERNATIONAL 30E » • 117=^03 0G003Sb 2 ■ "T-Cfé-O0! BKC INTERNATIONAL ELECTRONICS, INC. LAWRENCE, MA. 01841 TEL. 681-0392 DATA SHEET for 1N4531 DO-34 MAXIMUM RATING: V( BR) Io SURGE Top Tstg PW 100V 200mA 1/120S .5A -65C TO +175C -65C TO 20ÖC

1N4532

Abstract: 1N4531
Contextual Info: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings Ta = 25oC Continuous Reverse Voltage Repetitive Peak Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Symbol Value Unit VR 75 V VRRM 75

Contextual Info: Silicon Switching Diode Series 1N4531 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings @ 25°C Operating & Storage Temperature: -65°C to +175°C

Contextual Info: Silicon Zener Diode Series 1N4531 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings @ 25°C Operating Temperature: -65°C to +175°C Storage Temperature:

Contextual Info: Silicon Zener Diode Series 1N4531UR Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings @ 25°C Operating Temperature: -65°C to +175°C Storage Temperature:

C 704 diode

Abstract: 1N4531
Contextual Info: Silicon Switching Diode Series 1N4531 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings @ 25°C Operating & Storage Temperature: -65°C to +175°C

MIL-PRF-19500/116

Abstract: 1N4531UR DO-213AA
Contextual Info: FEATURES 1N4531UR • 1N4531UR AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/116 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

BUK2114

Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
Contextual Info: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63

1N4531

Abstract: 1N4534 1N4536
Contextual Info: 1N4531 1N4534 1N4532 1N4536 1N4533 Diode, switching, leaded Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND <¿0 4 » 0 1 Features -f • available in DO-34 package

in4531

Abstract: 1N4532 IN453 1N4531 IN4532 DO-34
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes

in4531

Abstract: 1N4532 1N4531 IN4532
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass

d1n914

Abstract: bb204b BAV10
Contextual Info: 10 Small Signal Leaded Devices Switching Diodes D 1N914 1N914A 1N914B 1N916 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS 11 BAV10 BAV18 BAV19 BAV20 BAV21 Pkg Vr V «F (mA) VF DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35

1N446-49

Abstract: DIODE LN4148 1N4154 1N4531 1N4536 1N914 1N916
Contextual Info: 1N4536 1N914, A, B 1N4154 1N916, A, B 1IM4148, 49 1l\l446-49 1N4531 AM BIEN T T E M P E R A T U R E - T &- D E G R E E S CEN TIG R A D E t/T Figure 9 Figure 10 ESTIMATION OF REVERSE RECOVERY TIME UNDER VARIOUS DRIVE CONDITIONS The reverse recovery tim e of a silicon signal

1N4532

Abstract: 1N4531
Contextual Info: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM

JANTX 1N4148-1

Abstract: 1N4148 JTX 1N4148-1 JAN 1N4148-1 JANTX 1N4148 JAN 1N4148 JANTX LM 1n4148 1N4531
Contextual Info: 1N914=JAN JANTX1N914 COMPUTER D ODE i f , ÎT 1N4148; JAN, JANTX, JAN TXV 1N4148 j a n , j a n t x , j a n t x v 1N4148-1 1N4531; JAN, JANTX, JAN TXV 1N4531 General Purpose Switching FEATURES DESCRIPTION • • • • • T h is serie s is very popular for general

1N4532

Abstract: 1N4531
Contextual Info: 1N4531 ~ 1N4532 HIGH SPEED SWITCHING DIODES DO - 34 Glass FEATURES : • High switching speed: max. 4 ns 1.00 25.4 min. 0.063 (1.6 )max. • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA.

PJ 949 diode

Contextual Info: bbSBiai ooeb'iob m N AMER PHILIPS/DISCRETE « apx bSE 1N4531 1N4532 D HIGH-SPEED SILICON DIODES Diodes in the sub-miniature DO-34 envelope intended fo r fast logic and general purpose applications. Because o f their small size the diodes are especially suitable fo r mounting in miniature assemblies e.g.

DSAIH0002568

Contextual Info: B K C INTERNATIONAL 30E » • 117=^03 0G003Sb 2 ■ ~T-03-0°l BKC INTERNATIONAL ELECTRONICS, INC. LAWRENCE, MA. 01841 TEL. 681-0392 DATA SHEET for 1N4531 DO-34 MAXIMUM RATING: V( BR) Io SURGE Top Tstg PW 100V 200mA 1/120S .5A -65C TO +175C -65C TO 20ÖC

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product data sheet Supersedes data of April 1996 1996 Sep 03 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass