1N 5404 DIODE Search Results

CB-257

Abstract: BYW 90 1N1581 diodes byw 214200 byw 150 D027A 1N1341B 200A2 1n1342
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types >0 VRRM A (V) 1HOMSON-CSF • fs m 10 ms vF (A) (V) / if max Tj = 175°C 3 A / Tam b = 100°C 1N 1N 1N 1N 1N 1N 5401 5402 5404 5406 5407 5407 S 3 1N 1N 1N 1N GS 5624 5625 5626 5627 5628 3 BVW17- 100

Diode IN 5404

Abstract: diode in 5401 IN 4004 diodes DIODE IN 4002 4002 diode DIODE 4004 diode IN 4004 5401 diode diode N 4007 KDA 1.2
Contextual Info: HERRMANN T ^ O I-1 5 KG 4SE J> m 443bS7S 0000123 3 • HRfIN Drahtdioden Lead mounted diodes Diodes à fils Diodentyp V T ype o f d io d e rrm V BR If a v Type de diode 4001 4002 4003 4004 4005 4006 4007 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 R 250-A

IN 5402 rectifier

Contextual Info: 1N5400 thru 1N5408 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current

IN 5402 rectifier

Abstract: 1N5400 1N5408 J-STD-002B Diodes 1n 5404 5407 1N54
Contextual Info: 1N5400 thru 1N5408 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current

Contextual Info: Diodes DIP Type 3.0A Rectifier 1N5400-1N5408 Features Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 200A Peak Low Reverse Leakage Current MaximumRatingsandElectricalCharacteristics @ TA = 25 Parameter Symbol

1N5400

Abstract: 1N5408
Contextual Info: 1N5400 . 1N5408 3 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-201AD Plastic Voltage 50 to 1000 V. Current 3.0 A. at 105°C. 9.1 ± 0.3 62.5 ± 0.5 • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

Contextual Info: 1N5400 - 1N5408 SILICON RECTIFIER DIODES DO - 201AD PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4

1N5400

Abstract: 1N5408
Contextual Info: 1N5400 - 1N5408 SILICON RECTIFIER DIODES DO - 201AD PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4

iskra diode

Abstract: BY144 BY142 si diode 1N4007 BY143 Diode IN 5404 1N4007 iskra diode 1N 4001 Iskra 11 250 251 4001 1n diode
Contextual Info: ISKRA ELECTRONICS INC 5SE D MÔÔ3477 ODOOfiTE 3 T- oi-iS' “r - ot - ¿ 3 Silicijeve usmerjalne diode 1 A f \ ' | I8 9 0 0 0 | Silicon rectifier diodes 1 À \ J Ursm Urrm JpAV •f s m Tip/Type 10 ms V 10 ms (V) 1N4001 e 50 1N4002 a i too 1N4003 ’ .200

1N5400

Abstract: 1N5408 A-405
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5400 thru 1N5408 1.Feature & Dimensions * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage * High forward surge capability

diode UN 5402

Abstract: Diode IN 5404 DIODE IN 5408 in 5408 diode DIODE IN 5408 DO27
Contextual Info: 1N5400 í¿ Ni iMBTTj» y Microsemi Corp. thru 1N5408 The diode experts SANTA A N A , CA 3A PLASTIC SILICON RECTIFIERS FE A T U R E S Low cost. High current capability. Low leakage. Low forward voltage. High surge capability. JEDEC DO-27 molded plastic case.

diode 1N540x

Contextual Info: 1N5400 – 1N5408 3.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data       

1N5408 Diode 1N5408

Abstract: diode 1N5408 specifications DIODE 1N5402 dc 1N540x Diode 1n5400 diode 1N540x diode 1n5408 diode 1n5401 1n5408 wte diode 1n5402
Contextual Info: 1N5400 – 1N5408 WTE POWER SEMICONDUCTORS Pb 3.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-201AD, Molded Plastic

Contextual Info: 1N5400 – 1N5408 WTE POWER SEMICONDUCTORS Pb 3.0A STANDARD DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-201AD, Molded Plastic

N5399

Abstract: 1n4365 D0201AD 1N4004 or 1N5404 N5397 1N4140 1N4144 1N4007 DO-41 package 1N4145 681000
Contextual Info: S C H O T T K Y R EC T IFIER S OptritlfVfl arvd Vrrm lo Mam Vf Type Package <Vo*» An*) (Amp*) (Volt») 1N5817 D O -4 1 20 1.0 25 .4 5 1a 1N5818 D O -4 1 30 1.0 25 055 1N5019 D O -41 40 1.0 25 0.00 S R I 20 D O -41 20 1.0 40 050 SR130 D O -41 30 1.0

diode 1n 5401

Abstract: Diode IN 5404 diode 1n5408 temperature rating 1N5408 Diode 1N5408 1N 5404 diode 1N5400 1N5405 1N5406 1N5408 1N 5400 diode
Contextual Info: 3.0A Rectifier COMCHIP www.comchiptech.com 1N5400 thru 1N5408 DO-201AD Reverse Voltage: 50 to 1000V Forward Current: 3.0A Features 1.0 25.4 Min. - Diffused Junction - High Current Capability and Low Forward Voltage Drop - Surge Overload Rating to 200A Peak

1N5402 spice model

Abstract: 1N5408 Diode 1N5408 1n5402 1N5406 diode 1n5408 temperature rating IN 5408 diode 1N5400 1N5400-1N5408 1N5405 Diode 1n5400
Contextual Info: 1N5400 - 1N5408 3.0A RECTIFIER SPICE MODELS: 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 200A Peak Low Reverse Leakage Current Plastic Material: UL Flammability

1N5401

Abstract: 1N5404-T DO-201AD 1N5400-1N5408 1N5401-B 1N5402 CT 1N5406 1N5406 1N5407 1N5408 Diode 1N5408
Contextual Info: 1N5400 - 1N5408 3.0A RECTIFIER Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop B A Surge Overload Rating to 200A Peak A Low Reverse Leakage Current Lead Free Finish, RoHS Compliant Note 3 C Mechanical Data D

1N5406

Abstract: 1N5402 DO-201AD 1n5401 1n5407 DS28007 1N5400-B
Contextual Info: SPICE MODELS: 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5400 - 1N5408 3.0A RECTIFIER Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop B A Surge Overload Rating to 200A Peak A Low Reverse Leakage Current

IN4143

Abstract: IN4145 IN4144 IN5406 diode IN5404 in5404 diode in5408 diode IN5406 IN5408 diode in5406
Contextual Info: RECTIFIER DIODES, Standard Recovery, Plastic Package Maximum Average Rectified Current at T„ IS I Number l0 Am ps t. ro 1N4139 1N4140 1N4141 I,» (Am ps) V,„ (V o te ) 1. (UAJ Bulk/Reel 200 1.2 5.0 500/1250 inches/m illim eters 100 105 400 600 800 X '

CT 1N5406

Abstract: 1n5402 1N54001 1N5406 1N5401 DO-201AD 1N5401 diodes DS28007 1N5407
Contextual Info: SPICE MODELS: 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5400 - 1N5408 3.0A RECTIFIER Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop B A Surge Overload Rating to 200A Peak A Low Reverse Leakage Current

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

SN113

Contextual Info: 1SE 0 | fll3fc.b?l 00017tS 7 | SEMIKRON INC seMIKROn _ Ifrm s V rsm | V | 20 A lFAV sin.180;Tamb = 45 °C 3A 1A Types 10 A Types Cmax. Rmln. a HF Cmax. Rmln n HF 6A Types Cmax. HF Rmin. Q 100 1 N 4002 5000 1 1N 5401 10000 0,2 SK 6/01

BA 5408

Abstract: JANTX1N974B-1
Contextual Info: Zener Regulator Diodes Scottsdale ' Package Outline ; D O-213AA Type SM Scottsdale DO-7 STD Scottsdale DO-35 STD SM I ' Power! Vz Mil Data Spec Sheet ID W , (V) 117 : izt (mA) (n ) 1 Zzk (£1! VR (V> (+/-%) 22.8 5 5 8301 0.4 30 4.2 49 1000 10096 0.4 30 4.2