1N54 Search Results

1N54

Abstract: 1N5402 DIODES
Contextual Info: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in

1N4148.1N4448

Abstract: BYV37-BYV38 byg20
Contextual Info: Temic Semiconductors Selector Guide - Alphanumeric Index 1N4148.1N4448 1N4150 1N4151 1N4154 1N4728A.1N4761A 1N5221B.1N5267B 1N5417.1N5418 BA1282.BA1283 BA282.BA283 BA479G.BA479S BA604 BA679.BA679S BA682.BA683 BA779.BA779S BA779 - 2 BA979.BA979S BA982.BA983

1N54001

Abstract: DS28007
Contextual Info: 1N5400 - 1N5408 3.0A RECTIFIER POWER SEMICONDUCTOR Features • • • • • Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 200A Peak Low Reverse Leakage Current Plastic Material: UL Flammability Classification Rating 94V-0

Contextual Info: 1N5400 THRU 1N5408 3.0 AMP SILICON RECTIFIERS VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability DO-201AD .220 5.6 .197(5.0) DIA. 1.0(25.4) MIN.

Contextual Info: Silicon Rectifier Formosa MS 1N5400 THRU 1N5408 List List. 1 Package outline. 2 Features. 2

IN 5402 rectifier

Abstract: 1N5400 1N5408 J-STD-002B Diodes 1n 5404 5407 1N54
Contextual Info: 1N5400 thru 1N5408 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current

1N5400-1N5408

Abstract: APPLICATION DIODE 1N5406 LITEON 1N5406 1n5406 liteon 1N54001 diode 1n5406 1n5408 BL 1n54001n5408 1N5401 Vishay DIODE 1N5402 3a
Contextual Info: 1N5400–1N5408 Vishay Lite–On Power Semiconductor 3.0A Rectifier Features D Diffused junction D High current capability and low forward voltage drop D Surge overload rating to 200A peak D Low reverse leakage current D Plastic material – UL Recognition

5415

Abstract: 1N5415
Contextual Info: 1N5415/US thru 1N5420/US Standard 3A FAST RECOVERY RECTIFIERS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 125, REV D.1 AV AI L AB L E AS 1 N , J AN , J AN T X , J AN T XV J AN S J AN EQ U I VAL EN T * SJ*, SX*, SV*, SS* Fast Recovery Rectifiers Qualified per MIL-PRF-19500/411

Contextual Info: I n ter n a tio nal S e m / c o n d u c to r I n c . 1N5400 th ru 1N5408 S T A N D A R D R E C O V E R Y P L A S T IC S IL IC O N R E C T IF IE R S VOLTAGE - 50 TO 1000 Volts CURRENT - 3.0 Ampere MECHANICAL DATA FEATURES • P la stic Package carries U nderw riters

1N5400

Abstract: 1N5405 1N5408
Contextual Info: 3A Standard Rectifier 1N5400 – 1N5408 3A Standard Rectifier Features • • • • Low Forward Voltage Drop High Current Capability High Surge Current Capability High Reliability DO-201AD • High Temperature Soldering Guaranteed 260°C/10 seconds /.375" 9.5mm lead length, 5lbs (2.3kg) tension

Contextual Info: DIGITRON SEMICONDUCTORS 1N5400-1N5408 GENERAL PURPOSE RECTIFIERS MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value – 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 50 100 200 300 400 500 600 800 1000 Unit VRRM Maximum repetitive reverse voltage

Contextual Info: 1N5400 thru 1N5408 Vishay Semiconductors General Purpose Plastic Rectifiers Reverse Voltage 50 to 1000V Forward Current 3.0A Features DO-201AD • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High surge current capability

1N5462

Abstract: varactor diode 1N5469 1N5449 1N5448 1N5441 to 1N5476 datasheet 1N5441 1N5442 1N5443 1N5444 1N5445
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER CAPACITANCE @ - 4 Vdc • 1 MHz pF 6.8 8.2 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447

1N5456A

Abstract: motorola 986 1N5446ARL 1N5448ARL
Contextual Info: MOTOROLA Order this document by 1N5446ARL/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges,

1N5415

Abstract: 1N5416 1N5417 1N5418 1N5419 1N5420 1N542
Contextual Info: 1N5415 THRU 1N5420 GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes * FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package

1N54

Abstract: 1N5400G 1N5408G
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5400G thru 1N5408G FEATURES Glass Passivated JunctionGeneral Purpose Plastic Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 3.0A * Construction utilizes void-free molded plastic technique

Contextual Info: 1N5400 - 1 N5408 3.0A RECTIFIER Features Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 200A Peak Low Reverse Leakage Current Plastic Material: UL Flammability Classification Rating 94V-0 I T D Mechanical Data_

Contextual Info: Rectifiers, General purpose Continued 3.0 2.0 lo (AMPS) @ T a (°C) 75 50 75 55 75 IFSM (AMPS) 50 50 200 100 125 CASE G P R -1A D O -15 V R R M (VOLTS) 50 I/ D O-201 A D G P R -3A 1N5400 100 CPR2-010 CR2-010 1N5401 200 CPR2-020 CR2-020 1N5402 300 1N5550

1N5400

Abstract: diode 1N5408 specifications 1n5400 datasheet 1N5404 1N5406 1N5407 1N5408 1N5401 1N5402
Contextual Info: 1N5400 THRU 1N5408 VOLTAGE 50V ~ 1000V Elektronische Bauelemente 3.0 AMP Silicon Rectifiers A suffix of "-C" indicates halogen-free & RoHS Compliant DO-27 .220 5.6 .197(5.0) DIA. FEATURES * Low Forward Voltage Drop 1.0(25.4) MIN. * High Current Capability

Contextual Info: 1N5400G-1N5408G Vishay Lite-On Power Semiconductor 3.0A Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • High current capability and low forw ard voltage drop • Surge overload rating to 125A peak • Plastic m aterial - UL R ecognition flam m ability

Contextual Info: 1N5400 THRU 1N5408 GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3 .0 Amperes FEATURES DP-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Construction utilizes void-free molded plastic technique

Contextual Info: 1N5400 THRU 1 N 54 08 SILICON RECTIFIERS DQ-201 AD FEATURES: 0.210 5.3 0.190(4.8) DIA. • Low cost • • • • High surge current capability Low leakage current Low forward voltage drop Diffused junction 1.0(25.4) MIN. 0.375(9.5) 0.285(7.2) MECHANICAL DATA

DO-27

Abstract: 1N5403G 1N5400G 1N5401G 1N5402G 1N5404G 1N5408G
Contextual Info: 1N5400G THRU 1N5408G GLASS PASSIVATED SILICON RECTIFIERS Reverse Voltage - 50 to 1000 V Forward Current - 3 A Features • High current capability • Glass passivated junction • Low forward voltage drop • Low reverse leakage • The plastic package carries UL flammability

1N5400

Abstract: 1N5408
Contextual Info: 1N5400 THRU 1N5408 GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts FEATURES ● ● ● ● ● Forward Current - 3.0 Ampere DO-201AD The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free