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    Glenair Inc 440HS001N1132-3

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    1N1132 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    1N1132
    		Motorola Motorola Semiconductor Datasheet Library Scan PDF 74.09KB 1
    1N1132
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 67.97KB 1
    1N1132
    		Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 127.87KB 1
    1N1132R
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 67.97KB 1

    1N1132 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


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    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Contextual Info: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


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    1N21B diode

    Abstract: 1N1132 1N21B 1N23B 1N23CR diode 1N23C ADUV 1N23B diode 1N1132R 1N26
    Contextual Info: M IL-S-19500/362 3 October 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER rm rrm o JL I i ' H i û ix tiio o t v tti A IN U 1 \T 1 1 o n n Ai>i X X Ú 4 X V This specification is mandatory for use by all D epart­ ments and Agencies of the Department of Defense.


    OCR Scan     		MIL-S-19500/362 1N1132 1N1132R 1N1132 1N1132R. MIL-S-19500/362 MIL-S-19500. MIL-S-19500 1N21B diode 1N21B 1N23B 1N23CR diode 1N23C ADUV 1N23B diode 1N1132R 1N26 PDF

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


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