1N21 Search Results

IN1183

Abstract: IOR 5250 IN1190 1N1183 1N1183A 1N2128A 1N3765 PD-2087 N1190 1N1133
Contextual Info: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 A m p P o w e r Silicon R e c tifie r D iodes Description and Features Major Ratings and Characteristics ' f îA V i 1N 1183 1N3765 1N 1183A 35*

Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,

A41E

Abstract: A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& JEO EC 50B 1N 1195 A9 8A 1N215460 - GE T Y P E 1 N 1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A 1N38993903 1N390913 1N320814 - - - A40F A44F A 139 S P E C IF IC A T IO N S * F M A V Max. average forward current (1 phase oper­

1N415C

Abstract: "Point Contact Diodes" 1N23G 1N530 JAN1N23WG MA41514 MA494
Contextual Info: Point Contact Diodes MODEL NUMBER PAGE 1N 21D .7-3 1 N 2 1 E . 7-3 1N 21G . 7-3

Contextual Info: Military Silicon Power Rectifier 99016 'ir 1N2153 Dim. Inches Minimum / / — BEND TO DESIRED ANGLE // // c - s 1 Vj ^ I 1 A r 1 r - j SEE DETAIL A ACROSS FLATS °~U^R r Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity A B C D F G H J K L

1N1183

Abstract: 1N1183A 1N1184A 1N1185A 1N1186A 1N2128A 1N3765 DO-203AB 1N1186RA
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series RoHS • Good surge current capability up to 1000 A COMPLIANT • Can be supplied to meet stringent military, aerospace and

Contextual Info: 1N2128A thru 1N2131AR Silicon Standard Recovery Diode VRRM = 50 V - 200 V IF =60 A Features • High Surge Capability • Types from 50 V to 200 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

1N1184

Abstract: 1N1183 1N1183A 1N1185 1N1186 1N2128A 1N3765 DO-203AB
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

Contextual Info: 1N2128A thru 1N2131AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF =60 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

1n1183

Abstract: 1n1183a 1n1186ar 1N1186 VISHAY
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

1N1183

Abstract: 1n1184
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

1N119

Abstract: 1N37 1N213 25MAY 1n1183 1n212
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

1N2133A

Abstract: 1N2128A 1N2129A 1N2132A 1N2130A 1N2131A 1N2134A 1N2135A 1N2136A 1N2137A
Contextual Info: B. PIY SEE CHART_ Iq 60 AMPS_ @ _ 140_ oc IS 900_ AMPS Vf case 1.3_ V @ _ 60_ @ T40_ oc 10 rn AMPS_ @ _ PIV @ 140_ oc @ _ @ °c STYLE D05 STAMP 1N2128A-1N213 8A

Contextual Info: 1N2148 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)10 @Temp. (øC) (Test Condition)25

Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,

a44e

Abstract: diode ge a40f A45A 1N3909-13 A44M A139 A45E A45M A44B A44A
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& 50B JEO EC 1N 1195 A98A 1N215460 - GE T Y P E 1N1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A - 1N390913 1N320814 - - A 40F A 44F 1N38993903 A139 S P E C IF IC A T IO N S *FM A V Max. average forward current (1 phase oper­

4JA3511

Abstract: 1N2155R in2160 1N2154 1N2154R 1N2155 1N2156 1N2157 1N2158 1N2159
Contextual Info: Silicon I 1N2154-60.R ~l Rectifiers Medium Current T hese stu d m o u n ted diffused ju n c tio n silicon rectifiers a re d e­ signed for all rectifier applications in th e 2 to 30 am pere range. A high ju n c tio n te m p eratu re ra tin g an d an extrem ely low for­

1N21

Contextual Info: 0.5-10 GHz COAXIAL DETECTORS AND DETECTOR MOUNTS • Broadband Coverage • Replaceable Elements SPECIFICATIONS FREQUENCY RANGE GHz MODEL VSWR GHz (Max) 0.1-11 501B 501BR N/A DETECTOR ELEMENT USE WITH ELEMENT N ot Supplied 1N21 1N23 CONNECTOR INPUT OUTPUT

Contextual Info: 1N2164 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N2164 Availability Online Store

Contextual Info: 1N2133A thru 1N2138AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF =60 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

Contextual Info: Microsemi Standard Recovery Rectifiers Part Number Microsemi Division Package Outline Mil ' Data IO I VR IFSM VF @ IO i 1R Spec : Sheet ID Amps ! (Volts) ' (Amps) (Volts) I (uA) Type 1 REC 1N2131A DO-5 DO-5 DO-5 DO-5 Í DO-5 DO-5 DO-5 DO-5 DO-5 DO-5 ; DO-5

1N22b

Abstract: 1N22B2 1n22b3 1N2448 1N376B 1N2447 1N2457
Contextual Info: SE HI CON C O M P O N E N T S INC EflE D • fll35157 CI000A37 E STUD BASE RECTIFIERS DO-5 CASE lQ RATINGS TO 60.0 AMPS '*v s< ; type m m ¿m m yovm - V m ITEM* m AMPERES v v -" '■ AMPS n x m 7 : AMPS 1N2136 1N2136A 1N2137 1N2137A 1N2138 450 450 500 500

1N2155

Abstract: 1N249B 1N3785 1N1184 1N3786 1N3899 1N4529 1N1183A 1N1191A 1N1195A
Contextual Info: DIODE TRANSISTOR CQ,1HIC. | RECTIFIERS 20 TO 40A AMPERES JEOEC 1N248B50B 1N 1195A - 1N2154* I N 5332 1N4529* 1N1183A- 30 90A 1N38993903 1N3909* 13 1N320814 98A 60 20 25 35 35 40 20 30 20 150 145 140 115 150 100 100 110 S P E C IF IC A T IO N S IFM AV Max. average forward

1N21A

Abstract: IN23B 1N22WB 1N23B 1N21D 1n21 1N21B 1n21br 1N23C 1N21BM
Contextual Info: 165- £ M « 1N21 1N21A 1N21B 1N21BM 1N21BMR 1N21BR 1N21C 1N21 CM 1N21CMR 1N21CR 1N21D 1N21 DM 1N21DMR 1N21DR 1N21B 1N21EM 1N21EMR 1N21ER 1N21F 1N21FM 1N21FMR 1N21FR 1N21G 1N21GM 1N21GMR 1N21GR 1N21WD 1N21WDM 1N21WB 1N21WBM 1N21WF 1N21WFM 1N21TC 1N21WGM 1N22