1N32 Search Results

1N5332

Contextual Info: DIGITRON SEMICONDUCTORS 1N3208-1N3214, 1N5332 STANDARD RECOVERY RECTIFIERS MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +200°C TJ Operating junction temperature range -65 to +200°C RθJC Maximum thermal resistance 1.25°C/W junction to case

Contextual Info: B K C INTERNATIONAL 30É ]> M 117^03 0 0 00 3 3 0 0 • i'p O 1 ~ 0 7 BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO. 508 681-0392 ENGINEERING DATA SHEET for 1N3287 GOLD BONDED, GERMANIUM, DIODE ABSOLUTE MAXIMUM RATINGS PEAK REVERSE VOLTAGE

A41E

Abstract: A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& JEO EC 50B 1N 1195 A9 8A 1N215460 - GE T Y P E 1 N 1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A 1N38993903 1N390913 1N320814 - - - A40F A44F A 139 S P E C IF IC A T IO N S * F M A V Max. average forward current (1 phase oper­

1N413B

Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1/ 2 threads 3. Standard polarity: Stud is Cathode Reverse polarity: Stud is Anode

Contextual Info: 1N3294+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current100 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.6k V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)100 @Temp. (øC) (Test Condition)130#

Contextual Info: 1N3289R+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current100 @Temp (øC) (Test Condition)130Ï V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.6k V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)100 @Temp. (øC) (Test Condition)200õ

Contextual Info: 1N3294R+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current100 @Temp (øC) (Test Condition)130Ï V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.6k V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)100

Contextual Info: 1N3289R+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current100 @Temp (øC) (Test Condition)130Ï V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.6k V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)100

Contextual Info: 1N3295+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current100 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.6k V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)100 @Temp. (øC) (Test Condition)130#

1N3289

Contextual Info: 1N3289/R asii SILICON POWER RECTIFIER DESCRIPTION: The 1N3289/R is Designed for General Purpose High Current Power Supply Applications. PACKAGE STYLE DO- 8 3 .3 0 0 3 2 7 7 .5 5 (0 .2 9 7 ) • 1N3289 = Cathode to Stud • 1N3289R = Anode to Stud Ï MAXIMUM RATINGS

do-205aa

Abstract: ana 650 DAD 1000 1N3288 1N3288A 1N3289A 24UNF N3291 N3295A N-329
Contextual Info: Data Sheet No. PD-2.184 INTERNATIONAL RECTIFIER I« R 1 N3S8B, 1 N 3S 88A SERIES 1OO Amp Avg Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics 1N3288 100* lF A V @ Max. Tc IFSM @ 50 Hz @ 60 Hz l 2t @50 Hz @ 60 Hz i2 v n

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

mais

Abstract: 1N3253-1N3256 1N3253 1N3256 1N3254 OATI 1N325 1N3255 A50A
Contextual Info: EDAL INDU STRI ES INC M5E ]> • 3CnS71t. ODDDe^l 11T ■ EDL 11Cmin- .033 dia 230 dia m ai' P ili min- m "max ' » .410 r a s ­ B. PIY SEE BELOW I. ' .75 AMPS 75 40 _ AMP S 1 .2 V @ u AMPS V* STYLE A50a STAMP 1N325 •EQUIV. TO .7 5 AMPS 25 PI V 25 EXCEPT

Contextual Info: 1N3255 Silicon Rectifier 11.23 Diodes Silicon Rectifiers General-Purpose American Mic. Page 1 of 1 Enter Your Part # Home Part Number: 1N3255 Online Store 1N3255 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

N3206

Abstract: 1N3206 in 3 N3064M
Contextual Info: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, MC916, MC916A, MCOOlj MCOOIAj MC002 Microsemi Corp. s c o rra , ^ j For more information call: 714 979-8220 / PELLET DIODES FEATURES • M ic r o m in ia tu r e p a c k a g e . • F a s t re c o v e ry .

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance RoHS • High case temperature COMPLIANT • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

Contextual Info: 1N3212 thru 1N3214R Silicon Standard Recovery Diode VRRM = 400 V - 600 V IF = 15 A Features • High Surge Capability • Types from 400 V to 600 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

1N3287

Abstract: ci 4081 HA 4016 MR 4011 diode germanium
Contextual Info: T 1 T O " p~ M d' '1 M I L - S - 19500/205B 1 JUNE 1990 burLkSLuiNG MIL-S -19500/205A 16 F e b r u a r y 1966 MILITARY SPECIFICATION SEMICONDUCTOR D EVIC E, DIOOE, GERMANIUM, LOW L E V E L . FORWARD-VOLTAGE-REFERENCE TYPE 1N3287 JAN. JANTX, AND JANTXV T h i s s p e c i f i c a t i o n 1s approved f o r use by a l l D e p a r t ­

Contextual Info: 1N3289A R thru 1N3294A(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =100 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 2 1 1 2 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

DIODE 1n1183

Contextual Info: VS-1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, Stud Version 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

Contextual Info: 1N3287+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage6.0 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage260m @I(FM) (A) (Test Condition)1.0m

Contextual Info: 1N3285 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current.10 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage2.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.5 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition).10 @Temp. (øC) (Test Condition)25’

Contextual Info: 1N3242 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current750m @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage2.2 @I(FM) (A) (Test Condition)750m @Temp. (øC) (Test Condition)50’