1N328 Search Results

Contextual Info: B K C INTERNATIONAL 30É ]> M 117^03 0 0 00 3 3 0 0 • i'p O 1 ~ 0 7 BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO. 508 681-0392 ENGINEERING DATA SHEET for 1N3287 GOLD BONDED, GERMANIUM, DIODE ABSOLUTE MAXIMUM RATINGS PEAK REVERSE VOLTAGE

1N413B

Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1/ 2 threads 3. Standard polarity: Stud is Cathode Reverse polarity: Stud is Anode

Contextual Info: 1N3289R+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current100 @Temp (øC) (Test Condition)130Ï V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.6k V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)100 @Temp. (øC) (Test Condition)200õ

Contextual Info: 1N3289R+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current100 @Temp (øC) (Test Condition)130Ï V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.6k V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)100

1N3289

Contextual Info: 1N3289/R asii SILICON POWER RECTIFIER DESCRIPTION: The 1N3289/R is Designed for General Purpose High Current Power Supply Applications. PACKAGE STYLE DO- 8 3 .3 0 0 3 2 7 7 .5 5 (0 .2 9 7 ) • 1N3289 = Cathode to Stud • 1N3289R = Anode to Stud Ï MAXIMUM RATINGS

do-205aa

Abstract: ana 650 DAD 1000 1N3288 1N3288A 1N3289A 24UNF N3291 N3295A N-329
Contextual Info: Data Sheet No. PD-2.184 INTERNATIONAL RECTIFIER I« R 1 N3S8B, 1 N 3S 88A SERIES 1OO Amp Avg Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics 1N3288 100* lF A V @ Max. Tc IFSM @ 50 Hz @ 60 Hz l 2t @50 Hz @ 60 Hz i2 v n

1N3287

Abstract: ci 4081 HA 4016 MR 4011 diode germanium
Contextual Info: T 1 T O " p~ M d' '1 M I L - S - 19500/205B 1 JUNE 1990 burLkSLuiNG MIL-S -19500/205A 16 F e b r u a r y 1966 MILITARY SPECIFICATION SEMICONDUCTOR D EVIC E, DIOOE, GERMANIUM, LOW L E V E L . FORWARD-VOLTAGE-REFERENCE TYPE 1N3287 JAN. JANTX, AND JANTXV T h i s s p e c i f i c a t i o n 1s approved f o r use by a l l D e p a r t ­

Contextual Info: 1N3289A R thru 1N3294A(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =100 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 2 1 1 2 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Contextual Info: 1N3287+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage6.0 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage260m @I(FM) (A) (Test Condition)1.0m

Contextual Info: 1N3285 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current.10 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage2.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.5 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition).10 @Temp. (øC) (Test Condition)25’

Contextual Info: 1N328A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current400m @Temp (øC) (Test Condition)100ï V(RRM)(V) Rep.Pk.Rev. Voltage850 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10 V(FM) Max.(V) Forward Voltage600mí @I(FM) (A) (Test Condition)650m @Temp. (øC) (Test Condition)25#

Contextual Info: 1N3284 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current.10 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage2.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.5 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition).10 @Temp. (øC) (Test Condition)25’

Contextual Info: 1N328 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current400m @Temp (øC) (Test Condition)100ï V(RRM)(V) Rep.Pk.Rev. Voltage850 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10 V(FM) Max.(V) Forward Voltage600mí @I(FM) (A) (Test Condition)650m @Temp. (øC) (Test Condition)25#

Contextual Info: DIGITRON SEMICONDUCTORS 1N3288 A -1N3297(A) HIGH POWER RECTIFIER MAXIMUM RATINGS Maximum peak repetitive reverse voltage Maximum nonrepetitive peak reverse voltage Maximum direct reverse voltage Maximum peak reverse current VRRM VRSM VR IRRM TC = -40° to +200°C

Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is Cathode Reverse polarity. Stud is Anode

Contextual Info: 1N3289+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current100 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.6k V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)100 @Temp. (øC) (Test Condition)130#

Burndy penetrox A

Abstract: Burndy penetrox 1N329S penetrox A penetrox 1N3289-96 1N3292R equivalent A70T A71T 1N3289R
Contextual Info: Silicon 1N3289-96.R A70S,A70T A71S.A71T Rectifiers The 1 N3289-1N 3296 Series is the ultim ate in to d ay 's H igh C u rre n t Silicon Rectifier field. By taking full advantage of the m ost advanced sem iconductor com p o n e n t m an u facturing techniques, G eneral Electric

a1870

Abstract: A187B 3260 a170d A177M A177T A187E A187PD 1N3261 1N3262
Contextual Info: RECTIFIERS 100 TO 150 AM PERES 1N3289-96 JIE DEC T Y P E 1N 3260-75 A70 A170 A177 - A180 A187 A V operation) 100 100 100 160 150 150 T c = <°C> 130 130 130 125 143 110 GE T Y P E SPEC IFICATIO N S •f M ax. average forw ard current (1 phase m V RM (surge)

A180P

Abstract: a1870 GE a70b a170 VS A177M 1N3261 1N3262 A170A A170M A180
Contextual Info: RECTIFIERS 100 TO 150 AMPERES 1N3289-96 JIE DEC T Y P E 1N3260-75 GE T Y P E A70 A170 A177 - A180 A187 SPEC IFICATIO N S Max. average forward current 1 phase •f m ( A V operation) 100 100 100 160 150 150 130 130 130 125 143 110 T c = <°C> V RM (surge)

1N32B

Abstract: 13EI A96N A96S A96T 1N4044 A90W A96A 1N4044-56 A291TD
Contextual Info: SILICON REC TIFIERS HIGH C U R R E N T 1100-275 A M P E R E S 1N3289-96 JEDEC TYPE 1N3260-73 GE TYPE ELECTRICAL SPECIFICATIONS I fm av Max. average forward current (11 phase operation) @ Tc = (°C) VrM(rep] - Max. repetitive peak reverse voltage (V) 160

1N3086

Abstract: 4SS54S2
Contextual Info: INTERNATIONAL RECTIFIER 5bE D • 4SS54S2 □□10b7 a 4 international Iis r I Rectifier Rectifiers, Standard Recovery 100 TO 200 AMPS Part RRM FSM (1 50Hz 60Hz 'F(AV) number (V) 1N3288A 1N3289A 1N3290A 1N3291A 1N3292B 1N3293A 1N3294A 1N3295A 1N3296A 150K5A

LOUA

Abstract: 1N3285 1N3282 1N3283 1N3284 1N3286
Contextual Info: EDAL INDU STRI ES INC MSE D / -Ô f - O ' J PXY IÄ SEE CHART . 100 mA 25 2.5 AMPS V 2.5 vf- y Q 100mA 25 T PIV 25 PIV 100 l.OuA P- lOuA PART # .o ‘ PIV 1N3282 1N3283 1N3284 1N3285 1000 1500 2000 2500 3000 1N3286 • . 2£Y. DESCRIPTION

Contextual Info: 1N3281 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current.75 @Temp (øC) (Test Condition)70’ V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition).75 @Temp. (øC) (Test Condition)25

Contextual Info: 1N3283 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current100m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage1.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.5 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)25’