1N3331 DIODE Search Results

DO13

Abstract: do-13 DO15 1N2806 1N2814 1N3316 1N2826 1N2827 1N2808 1N6066A
Contextual Info: Zener Diodes Page 1 of 1 Home Device Type Package Device Type Package Device Type Package Device Type Package 1N2804 TO-3 1N2991B DO-4 1N3344 DO-5 1N6044A DO-13 1N2805 TO-3 1N2992B DO-4 1N3345 DO-5 1N6045A DO-13 1N2806 TO-3 1N2993B DO-4 1N3346 DO-5 1N6046A

1n3346

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N3305 thru 1N3350 50 WATT SILICON ZENER DIODES Available in Voltages from 6.8 V thru 200 V POLARITY : Standard polarity FEATURES: anode to case. Reverse polarity cathode to case indicated by suffix R. (EX. 1N3305RB). • • •

in3314

Abstract: in3333 1N3307 IN3306 in3331 1N3327 1N3328 1N3326 1N3316 IN3305
Contextual Info: 1N3305 thru 1N3350 50 WATT SILICON ZENER DIODES Available in Voltages from 6.8 V thru 200 V POLARITY : FEATURES: Standard polarity anode to case. Reverse polarity cathode to case indicated by suffix R. (EX. 1N3305RB). • ZENER VOLTAGE 6 .8 TO 200 V •

IN3350

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N3305 thru 1N3350 SO WATT SILICON ZENER DIODES Available in Voltages from 6.8 V thru 200 V POLARITY: Standard polarity FEATURES: • • • • VOLTAGE 6.8 TO 200 V LOW ZENER IMPEDANCE HIGHLY RELIABLE AND RUGGED HERMETICALLY SEALED

ne002

Abstract: 1n4551 ir705 1N3307 1N3316 1N3326 1n4554 1N3340 IN3310 1N3309
Contextual Info: Back to Zener Diodes 1N3305 1N4549 1N3350 1N4556 'li'i NEW ENGLAND SEMICONDUCTOR 50 WATT SILICON ZENER DIODES Available in Voltages from 3.9 V thru 200 V POLARITY : Standard polarity FEATURES: anode to case. Reverse polarity cathode to case indicated by

1N4564

Abstract: 1N2806 1N3307 1N2814 1N3316 1N3326 1N2826 1N3327 1N2827 1N3328
Contextual Info: 50 WATT ZENER DIO DES TO-3 AND DO-5 CASE FEATURES: • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded • Complete Characteristic Listing • Low Thermal Impedance DESCRIPTION This series of high grade voltage regulator diodes is designed

IN3308

Abstract: ne002 in3314 IN3337 in3331 1N3307 1N3326 1N3328 1N3316 1N3327
Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N3305 thru 1N3350 50 WATT SILICON ZENER DIODES Available in V oltages from 6.8 V thru 200 V POLARITY : Standard polarity FEATURES: anode to case. Reverse polarity cathode to case indicated by suffix R. (EX. 1N3305RB). • ZENER VOLTAGE 6.8 TO 200 V

1N3307

Abstract: 1N3316 1N3326 1N3327 1N3328 1n4554 1n3321
Contextual Info: S O L I D S TAT E Your TOTAL solutions source! INC. 1N3305 – 1N3350 1N4549 – 1N4556 50 WATTS ZENER DIODES DO5 ZENER DIODES Units are available with anodeto-case and cathode-to-case connections standard and reverse polarity . For reverse polarity add suffix “R” to type

1N4564

Abstract: 1N2806 1N3307 1N2814 1N3316 1N3326 1N2826 1N3327 1N2827 1N3328
Contextual Info: 50 WATT ZENER DIODES TO-3 AND DO-5 CASE FEATURES: DESCRIPTION • Hermetic Seal This series of high grade voltage regulator diodes is designed to meet the electrical and environmental requirements of the commercial, military, and industrial, computer and home instru­

1N2806

Abstract: 1N3307 1N3326 1N2827 1N2814 1N3328 1N3327 1N2826 1N3316 1N4564
Contextual Info: SENICON COMPONENTS ZAE INC D 0135157 0000Ô25 b • 7^//' ¡ 9 50 WATT ZENER DIODES TO-3 AND DO-5 CASE FEATURES: • Hermetic Seal • High Temperature Operation DESCRIPTION This series of high grade voltage regulator diodes is designed to meet the electrical and environmental requirements of the

Contextual Info: ZENER DIODES, 50 WATTS, DO-5 PACKAGE S t o « ill & mm N um ber 2 a tter Zener Voltage T ee l a t „ C u rre n t ¥> t«A> M aximum 2ener Im pedance at l,*S 0mA at l„ (m A ) 2,. (Ohm s) 1N33Q5 1NS3Q& 1N3307 1N3308 1N3309 6.8 7.5 8.2 9.1 10 1850 1700 1N3310

1N4726

Abstract: 1N5349 1N3327 1N2826 1N3326 1M4558 1N3316 1N2814 1N4564 1N3307
Contextual Info: GUIDE TO AVAILABLE AXIAL LEADED ZENER DIODES Earty Industry Standard Early Industry Standard Low Noise Low Current Mil - Spec Low Current Low Noise 50 uA Low Current Low Leakage Mil - Spec Industry Standard Mil - Spec 400mw DO-35 Industry Standard Mil - Spec

1N2621

Abstract: 1N2621A 1N2620A 1n2620 1N2623A 1N3326 1N3327 1N2826 1N2622 1n3321
Contextual Info: Metal POWER 10 W PACKAGE DO-4 50 W TO-3 DO-5 Zener Volts 22 24 1N 2985B 1N 2986 B 1N 2819 B 1N 2820 B 1N 3320 B 1N3321 B 25 27 30 33 36 1N2987 1N 2988 1N 2989 1N 2990 1N2991 B B B B B 1N2821 1N 2822 1N2823 1N2824 1N2825 B B B B B 1N 3322 1N 3323 1N 3324 1N 3325

Contextual Info: I n ter n a tio n a l 1N3305 S e m ic o n d u c to r , I n c . thru 50 WATT ZENER DIODES 1N3350 MAXIMUM RATINGS Operating Tem perature: Storage Tem perature: DC Power Dissipation: -65 °C to +175 °C -65 °C to +175 °C 50 Watts at 75 °C Power Derating: 0.5 W /°C above 75 °C

1N33

Abstract: 1N3098-1N3101 1N31A 1N3206 1N31 1N3112 1N3155 1N318 1N32 IN3338
Contextual Info: Zener Type No. 1N3049 1N3050 1N3051 Zener Vo tate al: li Volts @ mA 1.6 1.4 1.2 160.0 180.0 200.0 Max. Zener Impedance @ Izr Ohms Zener Voltage Tolerance 1100.0 1200.0 1500.0 No Suffix = 2 0 % Suffix A = 1 0 % Suffix B = 5 % Power Rating Device Package MICROSEMI

1N4564

Abstract: 1N3340 1N2804 1N2846 1N3305 1N3350 1N4549 1N4550 1N4556 1N4557
Contextual Info: DE~|b3b7a5S 007Ô0G7 7 MOTOROLA SC -CDIODES/OPTO} T -//- / ? 1N2804 thru 1N2846 MOTOROLA 6.8V thru 200V Case 54-05 SEM ICO NDUCTOR 1N3305 thru 1N3350 TECHNICAL DATA 6.8V thru 200V (Case 58-01) 1N4549thru 1N4556 3.9V thru 7.5V (Case 58-01) 1N4557thru 1N4564

1n3020 zener diode

Abstract: 1N3206 in3155 1N2980 1N2981 1N2982 1N2983 1N2985 1N2986 1N2987
Contextual Info: Zener Type No. Zener Voltage at 1ZT Volts @ mA Max. Zener Impedance @ lZT Ohms 3.0 4.0 " 1N2979 1N2980 1N2981 1N2982 1N2983 2N2984 1N2985 1N2986 1N2987 1N2988 1N2989 1N2990 1N2991 1N2992 1N2993 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 25.0 27.0 30.0 33.0 36.0

K2134

Abstract: IN3344 IN3324 1N4564 1N3305 E5450 1N2804 4556 AD 8 PIN
Contextual Info: 1N2804 thru 1N2846 1N3305thru 1N3350 1N4549thru 1N4556 1N4557thru 1N4564 6.8V thru 200V C a se 54 (^ ) M O T O R O L A 6.8V thru 200V (C a s e 58) 3.9V thru 7.5V (C a se 58) ZENER DIODES 3.9V thru 7.5V (C a s e 54) U n its are a v a ila b le w ith an od e-to *case and cath o d e -to -case

1n2620

Abstract: 1N4564 1N2625 1N2613 1N2626 in2819 1N2804 1N2846 1N3305 1N3350
Contextual Info: MOTOROLA SC { D I O D E S / O P T O * D E~|b3 b 7 a 5 S 0 0 7 Ô0 G7 T -//- / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N2804 thru 1N2846 1N3305thru 1N3350 1N4549 thru 1N4556 1N4557thru 1N4564 6.8V thru 200V Case 54-05 6.8V thru 200V (Case 58-01) 3.9V thru 7.5V (Case 58-01)

ZENER DIODE color bands

Abstract: 1N901 1N3206 1N31 1N3112 1N3155 1N318 1N32 glass "DO-7" diode color
Contextual Info: Zener Type No. 1N3049 1N3050 1N3051 Zener Vo tate al: li Volts @ mA 1.6 1.4 1.2 160.0 180.0 200.0 Max. Zener Impedance @ Izr Ohms Zener Voltage Tolerance 1100.0 1200.0 1500.0 No Suffix = 2 0 % Suffix A = 1 0 % Suffix B = 5 % Power Rating Device Package MICROSEMI

1N3106

Abstract: in3155 1N3206 1N3098 1N3105 1N3199 1N31 1N3112 1N3155 1N318
Contextual Info: Zener Type No. 1N3049 1N3050 1N3051 Zener Vo tate al: li Volts @ mA 1.6 1.4 1.2 160.0 180.0 200.0 Max. Zener Impedance @ Izr Ohms Zener Voltage Tolerance 1100.0 1200.0 1500.0 No Suffix = 2 0 % Suffix A = 1 0 % Suffix B = 5 % Power Rating Device Package MICROSEMI

1N310

Abstract: ZENER DIODE 18 volt 5 watt Zener diode h5c 1N2621 IN333 1N2620 1N2623 1N936 1N937 1N2865-1N2
Contextual Info: lo i£>r-«. 00 T> fnrnro ro ro z&><zf>zo CD 01 m ai IX i£>kO cm O O O O C CO ^ ^ ^ ^ ^ Z Z O' ' Q I I I ! o o o o0*0o S'U) ÇVJ -< o HUO h E «> c oooo d o d o VO 00 O CM \0 sO 0 s o' ) LO lf) i n in I +1 +1 +1 +1 ) PO 00 co co >ci oì ci cri cg CM CM

Z82D5

Abstract: "Zener Diodes" 1n5048 1N5008 1N4189 1N4730 zener 1N4653 1N4671 1n4849 1N5012 1N4171
Contextual Info: GUIDE TO AVAILABLE AXIAL LEADED ZENER DIODES Pow er E arly In d u stry S ta n d a rd E arly In d u stry S ta n d a rd L o w N o ise L o w C u rre n t M il - S p e c L o w C u rre n t 50 u A Low Leakage L o w N o is e L o w C u rre n t M il - S p e c In d u stry

1N4554B

Abstract: 1220 whs 1N3305 1N3350 1N4549 1N4550 1N4554 MIL-PRF19500 358E 431 regulator
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 October 1999. INCH-POUND MIL-PRF-19500/358E 23 July 1999 SUPERSEDING MIL-S-19500/358D 26 May 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR