1N3600 DIE Search Results

JANS1N4150-1

Abstract: JX4150 1N4150UB JANS1N6640US J4150 JV4150 JX-41 diode MARKING CODE jx JANS1N6640 1N4150-1
Contextual Info: INCH-POUND MIL-PRF-19500/231M w/AMENDMENT 2 16 July 2010 SUPERSEDING MIL-PRF-19500/231M w/AMENDMENT 1 25 January 2010 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4150-1, 1N4150UR-1, 1N4150UB, 1N4150UBCA, 1N4150UBCC, 1N4150UBD, AND 1N3600, JAN, JANTX, AND JANTXV

diode 1N4001 specifications

Abstract: 1N4001 general diode purpose Diode Array 1N4448 THD4001 1N4610 1N914/1N4148 THD-4148 THD4004 1N4376 THD22Q
Contextual Info: ALLECRO MICROSYSTEMS INC bbE » • 0S0N33Í 000bS2b £10 BA LG R ELECTRICAL CHARACTERISTICS at TA = + 25°C Device Type Type Max. Description mA v (BR) Min. (V) vF Coo> 'r *rr Max. Max. @ IF Max. Max. (V) (mA) (nA) (ns) (PF) Geometry 1N3600 THD3600 General Purpose

MSD700

Abstract: MSD7000 1n3600 die
Contextual Info: »Ë~|b3b7S55 | 6367255 □□ 3 0 1 1 4 MOTOROLA t. SC CD I O D E S / O P T O 34C 3811^ oj-o SILICON SWITCHING DIODE DIE continued) sr 1C914 DIE NO. UNE SOURCE — DSD241 This die provides performance equal to or better than that of the following device types:

1N3600

Abstract: 1N4150 DIE diode 29 DIODE R3 1N4150 CMPD4150 CPD41 1n3600 die
Contextual Info: PROCESS CPD41 Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

1N3600

Abstract: 1N4150 DIE 1N4150 CMPD4150 CPD41 1n3600 die
Contextual Info: PROCESS CPD41 Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.7 x 19.7 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

1N3600

Abstract: 1N4150 CMPD4150 CPD41 1n3600 die
Contextual Info: PROCESS CPD41 Central Switching Diode TM Semiconductor Corp. High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

JAN 1N4150-1

Abstract: JANS1N4150-1 JANS1N6640 1N3600 1N4150-1 1N4150UR-1 3pda Q033b D0213 Scans-0016000
Contextual Info: MIL SPECS H4 E D 00G0125 Q033bfl7 [The documentationand process conversion | Imeasures necessary to comply with this | |revision shaLl be completed by 23 MAR 94. |

MD4148

Abstract: MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2
Contextual Info: GENERAL PARAMETER RESTRICTIONS FOR 100% DICE TEST: U nm ounted dice d o n o t have the pow er ratings o f packaged devices, therefore test conditions as well as ratings m ay need to be reduced or sam pled in packaged form as described below: V p = 200 m A m axim um . A ccuracy variable above 50 m A , highly contact dependent.*

1n4148 D035

Abstract: BE110 1N4449 replace 1N4448 BF113 1n3600 die 1N4150 DIE
Contextual Info: S ilicon D iodes Silicon Sw itching D iodes for C o m p u ter A pplications in D O -35 & LL-34/35 Packages Peak Inverse V olta g e ÍM IN . PIV) Type Volts M axim um A verag e R ectified C u rre n t M axim um P ow er D issipation @ 25: C (W mA M axim um

CRYSTAL 20 mhZ

Abstract: Crystal oscillator 12 MHz 130Q 1N3600 604D PCK604S
Contextual Info: OM C HI P SEE D S YSTEMS bT' l OLi S? 0000M47 OCS SD2 PCK604 ^ 5 0 - 0 ^ 50 to 600 MHz Crystal Controlled Frequency Synthesizer OnChip Systems P R O D U C T H IG H L IG H T S 50 - 600 MHz ♦ F requency Range 50 to 6 0 0 MHz 12.5-18.75 MHz CRYSTAL ♦ Inexpensive In p u t C rystal 12.5 to

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

GR712RC

Abstract: UT700 melf ZENER diode COLOR CODE 5962R102 smd zener diode color code UT8QNF8M HDMI verilog BCH RTAX2000 UT54ACS164245 "HARMONIC DRIVE"
Contextual Info: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form December 2012 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions is comprised of ten divisions – Colorado Springs, Gaisler, Motion

5962-94758

Abstract: em 242 stepper 12V SM 39 Z 2 STEPPER MOTOR 5962-1320101KXC RTAX2000 UT16AD40P GR712RC Metelics 2006 catalog RHD5932 stepper motor em 242
Contextual Info: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form January 2014 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions – Colorado Springs, Gaisler, Microwave Filter Components,

UT16AD40P

Abstract: RHD5932 RHD5930
Contextual Info: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form January 2014 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions – Colorado Springs, Gaisler, Microwave Filter Components,

EM-553 motor

Abstract: UT16AD40P BUS-8553 CD4583 spw 068 power supply spw 068 UT8QNF8M UT63M143 rtax2000 UT0.6uCRH
Contextual Info: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form January 2012 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions is comprised of ten divisions – Colorado Springs, Gaisler, Motion

MSAN-141

Abstract: MT8930B MSAN-128 MT8930 MT8931B sc54 motorola b1 a230
Contextual Info: Application Note MSAN-141 Implementation Details of the MT8930B/31B S/T Interface  ISSUE 1 November 1992 Contents • 1.0 MT8930B/31B S/T-Interface Transceiver • 2.0 Access Consideration at the S/T-Interface • 3.0 System Interface • 4.0 Control Interface Port

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.

LBIT 204

Abstract: MSAN-128 MSAN-141 MT8930 MT8930B MT8931B Philips FA 261 A224N
Contextual Info: Application Note MSAN-141 Implementation Details of the MT8930B/31BS/T Interface ISSUE 1 November 1992 Contents • 1.0 MT8930B/31B S/T-Interface Transceiver • 2.0 Access Consideration at the S/T-Interface • 3.0 System Interface • 4.0 Control Interface Port

A224N

Abstract: LBIT 204 SC-14 sc42 MT8930B MSAN-128 MSAN-141 MT8930 MT8931B
Contextual Info: Application Note MSAN-141 Implementation Details of the MT8930B/31BS/T Interface ISSUE 1 November 1992 Contents • 1.0 MT8930B/31B S/T-Interface Transceiver • 2.0 Access Consideration at the S/T-Interface • 3.0 System Interface • 4.0 Control Interface Port

Contextual Info: Application Note MSAN-141 Implementation Details of the MT8930B/31B S/T Interface  ISSUE 1 November 1992 Contents • 1.0 MT8930B/31B S/T-Interface Transceiver • 2.0 Access Consideration at the S/T-Interface • 3.0 System Interface • 4.0 Control Interface Port

circuit diagram of voice recognition

Abstract: MSAN-141 MSAN-128 MT8930 MT8930B MT8931B
Contextual Info: Application Note MSAN-141 Implementation Details of the MT8930B/31B S/T Interface  ISSUE 1 November 1992 Contents • 1.0 MT8930B/31B S/T-Interface Transceiver • 2.0 Access Consideration at the S/T-Interface • 3.0 System Interface • 4.0 Control Interface Port

100414DC

Abstract: 5401DM Fairchild dtl catalog fsa2719m 4727BPC FCM7010 FCM7004 937DMQB fairchild rtl FSA2501
Contextual Info: FAIRMONT ELECTRONICS PTY. LTD. TE L.48-6421 4 8 -6 4 8 1 /2 /4 C AB LES ' FAIRTRONICS' C R A IG H A L L T E L E X 8-3227 S A . P O .BOX 41102, C R A IG H A LL 2024. I ouani v-ox 39! 262Bramley 2018 FAIRCHILD 464 Ellis Street, M ountain View, C alifornia 94042

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which