Q033B Search Results

Contextual Info: 7 T S ci 2 3 7 un 1S 6 TH Q033b24 SGS-'mOMSOM ~ r-V é -o 7 V o T74LS378 IM [H ì [I[L i S ¥ [H ì® iO © i HEX PARALLEL D REGISTER WITH ENABLE • 8-BIT HIGH SPEED PARALLEL REGISTER ■ POSITIVE EDGE-TRIGGERED D-TYPE FLIPFLOPS ■ FULLY BUFFERED COMMON CLOCK AND

JAN 1N4150-1

Abstract: JANS1N4150-1 JANS1N6640 1N3600 1N4150-1 1N4150UR-1 3pda Q033b D0213 Scans-0016000
Contextual Info: MIL SPECS H4 E D 00G0125 Q033bfl7 [The documentationand process conversion | Imeasures necessary to comply with this | |revision shaLl be completed by 23 MAR 94. |

Z861404PSC

Abstract: 17p05 Z8602 Z8614 18P06 "Keyboard Controller" A40M3
Contextual Info: P r o d u c t S p e c if ic a t io n ^ 2 iL Œ Z8602/14 NMOS Z8 8-BIT MCU K e y b o a r d C o n t r o lle r FEATURES • +4.75V t o +5.25V Operating Range Two 6-Bit Programmable Prescaler ■ Low-Power Consumption - 750 mW Typical Six Vectored, Priority Interrupts from Six Different

D42S4400

Abstract: NEC 424400
Contextual Info: N EC ELECTRONICS INC NEC Electronics Inc. b l E D • b4B7SB5 DQ33b3G T3? M N E C E pPD424400, 424400A/L, 42S4400A/L 1,048,576 X 4-Bit Dynamic CMOS RAM T - H í - X j » -/< ? Description Features The devices listed below are fast-page dynamic RAMs organized as 1,048,576 words by 4 bits and designed to

AM29F040A

Abstract: 17113D-4 AMD date code 29f040 Am29F040
Contextual Info: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards

Contextual Info: HB56SW872ESNJ Series, HB56SW864ESNJ Series 8.388.608-word x 72-bit High Density Dynamic RAM Module 8.388.608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-764A Z Rev. 1.0 Apr. 4, 1997 Description The HB56SW872ESNJ, HB56SW864ESNJ belong to 8 Byte DIMM (Dual In-line Memory Module)

ic tlo 741

Contextual Info: BURR - BROW N [ OPA336 OPA2336 OPA4336 1 SINGLE-SUPPLY, McroPOWER CMOS OPERATIONAL AMPLIFIERS MicroAmpHfier* Series FEATURES DESCRIPTION • SINGLE SUPPLY OPERATION • RAIL-TO-RAIL OUTPUT (within 3mV • McroPOWER: lQ = 20|iA/Amplifier OPA336 series micropower CMOS operational ampli­

Contextual Info: PRELIMINARY a Am79C90 CMOS Local Area Network Controller for Ethernet C-LANCE Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Compatible with Ethernet and IEEE 802.3 10BASE 5 Type A, and 10BASE 2 Type B, “Cheapernet,” 10BASE-T ■ Easily interfaced with 80x86,680x0, Am29000 ,

Bt8069-Series

Abstract: PCM30 TS16 MARKING CODE CGA BTP9170 BT806 Q033b
Contextual Info: Preliminary Information This document contains information on a new product. The parametric infor­ mation, although not fully characterized, is the result of testing initial devices. Distinguishing Features • Intelligent Single-Chip E l Transceiver 2048 kbit/s

Contextual Info: S G S-THOMSON 42E D / = T SCS-THOMSON A 7 # M e la m i ® *! * QG33bS0 a'BSfifH T74LS490 T-V5-23-&#39;3 DUAL DECADE COUNTER • DUAL VERSION OF 74LS90 ■ INDIVIDUAL ASYNCHRONOUS CLEAR AND PRESET TO 9 FOR EACH COUNTER ■ COUNT FREQUENCY - TYPICALLY 35 MHz

Contextual Info: KS0125 Multimedia ELECTRONICS INTRODUCTION The KS0125 is a multi-standard video encoder for Video-CD application. It converts digital component video to standard NTSC, or PAL analog baseband signal. A 10-row by 24-column character on screen display OSD is supported. The OSD character font ROM consists of 250

m5m410092

Contextual Info: Preliminary Rev. 0.95 3D-RAM M5M410092B ELECTRONIC DEVICE GROUP Overview of 3D-RAM and Its Functional Blocks Introduction • Flexible dual Video Buffer supporting 76-Hz CRT refresh One of the traditional bottlenecks of 3D graphics hardware has been the rate at which pixels can be

Contextual Info: BURR - BROWN OPA547 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • WIDE SUPPLY RANGE Single Supply: +8V to +60V Dual Supply: ±4V to ±30V • HIGH OUTPUT CURRENT: 500mA Continuous • WIDE OUTPUT VOLTAGE SWING • FULLY PROTECTED:

AM29F200

Contextual Info: FIN A L Am29F200T/Am29F200B Adva^ 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS S.O Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ Compatible with JEDEC-standards ■ — P in o u t a n d so ftw a re c o m p a tib le w ith

Q033b

Contextual Info: TOSHIBA TLCS-900 Series TMP93CS40 Low Voltage/Low Power 4 External memory expansion CMOS 16-bit Microcontrollers • Can be expanded up to 16M bytes (for both programs and data). TMP93CS40 • AM8/16 pin (select the external data bus width). • Can mix 8- and 16-bit external data buses.

Contextual Info: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

Contextual Info: 1 73 13 bS □ □ 33 b7b m i B U R R - BROW N INA126 M/croPOWER INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • • • • • • • The INA126 is a precision instrumentation amplifier for accurate, low noise differential signal acquisition. Its two-op-amp design provides excellent performance