1N3890 DIODE Search Results

Contextual Info: 1N3890 100 V - 12 A Fast Recovery Rectifier 5.20 Diodes High-Speed/Fast Recovery Di. Page 1 of 1 Enter Your Part # Home Part Number: 1N3890 Online Store 1N3890 Diodes 100 V - 12 A Fast Recovery R ectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits

tt 3043

Abstract: cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885
Contextual Info: MIL SPECS I C J Q C m a i H S OODBTOS 1 | MIL-S-19500/304B AMENDMENT 3 11 Auqust 1987 WOTSTDTfre-AMENDMENT 2 8 July 1985 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893,

diode 1n4017

Abstract: 1N4017 1N3819 1N4018 in3997 1N4022 1N4027 1N3985 IN3996 1n4000 DIODE
Contextual Info: Zener Type No. 1N 3815 1 N 3816 1N3817 1N3818 1N3819 1N3820 1N3821 1N3822 1N3823 "IN 3824“ " 1N3825 1N3826 1N3827 1N3828 1N3829 1N3830 Type No 1N3879 1N3880 1N3881 1N3882 1N3883 I N 3889 1N3890 1N3891 1N3892 1N3893 Zener Type No. Zener Voltage at ZT Volts

IN3889

Abstract: 1N3819 equivalent 1N3997 equivalent 1N3985 1N402 1N4022 1N3815 1N3817 1N3818 1N3820
Contextual Info: Zener Type No. 1N 3815 1 N 3816 1N3817 1N3818 1N3819 1N3820 1N3821 1N3822 1N3823 "IN 3824“ " 1N3825 1N3826 1N3827 1N3828 1N3829 1N3830 Type No 1N3879 1N3880 1N3881 1N3882 1N3883 I N 3889 1N3890 1N3891 1N3892 1N3893 Zener Type No. Zener Voltage at ZT Volts

IN3826

Abstract: 1N402 1N4022 IN3880 1N4017 1N4020 in4017 IN3826A 1N4018 diode IN4000
Contextual Info: Zener Type No. 1N 3815 1 N 3816 1N3817 1N3818 1N3819 1N3820 1N3821 1N3822 1N3823 "IN 3824“ " 1N3825 1N3826 1N3827 1N3828 1N3829 1N3830 Type No 1N3879 1N3880 1N3881 1N3882 1N3883 I N 3889 1N3890 1N3891 1N3892 1N3893 Zener Type No. Zener Voltage at ZT Volts

diode 1n4017

Abstract: 1N4027 s 8050 d 331 1N401 DIODE 1N4022 1N4022 1N3815 1N3816 1N3817 1N3820
Contextual Info: Zener Type No. 1N 3815 1 N 3816 1N3817 1N3818 1N3819 1N3820 1N3821 1N3822 1N3823 "IN 3824“ " 1N3825 1N3826 1N3827 1N3828 1N3829 1N3830 Type No 1N3879 1N3880 1N3881 1N3882 1N3883 I N 3889 1N3890 1N3891 1N3892 1N3893 Zener Type No. Zener Voltage at ZT Volts

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CP CLARE hg 1004

Abstract: 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 November 1999. INCH-POUND MIL-PRF-19500/304D 15 August 1999 SUPERSEDING MIL-S-19500/304C 6 June 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY

Contextual Info: N AMER P H ILIP S /D IS C R E TE □LE D • b b 5 3 T 3 1 0 0 1 1 7 1 5 fl ■ 1N3889 to 1N3893 J ^T-03-l 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.

1N3893

Abstract: ds662 1N3889 c738 1N3890 1N3891 1N3892 56295A
Contextual Info: N AMER PHILIPS/DISCRETE □ LE D fabsa^i 0011715 a 1N3889 to 1N3893 T - 0 3 - J7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.

Contextual Info: 1N3889 thru 1N3893R Silicon Fast Recovery Diode VRRM = 50 V - 400 V IF = 12 A Features • High Surge Capability • Types up to 400 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

msc stud diode

Abstract: 1N3891 1N3893 1N3891A JANTX microsemi
Contextual Info: 1N3889 – 1N3891, 1N3893 Available on commercial versions Qualified Levels*: JAN, JANTX, and JANTXV FAST RECOVERY RECTIFIERS Qualified per MIL-PRF-19500/304* DESCRIPTION This 1N3889 – 1N3891 and 1N3893 family of rectifier devices are suitable for applications in

Contextual Info: 1N3889 thru 1N3893R Silicon Fast Recovery Diode VRRM = 50 V - 400 V IF = 12 A Features • High Surge Capability • Types up to 400 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

IN3889-IN3893

Abstract: 1n3890 diode 1N3891 B137 1N3889 1N3890 1N3892 1N3893 "current reference"
Contextual Info: S E H I T R O N . INDUSTRIES LTD M3E D • S i a ? » 1 000018t, è B S L C B IN3889-IN3893 SERIES T - < B - n Fast Recovery Rectifier 12 Amp Silicon Diode FEATURES ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current .45") 11.5

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201

56295A

Abstract: 1N3889 1N3890 1N3891 1N3892 1N3893 IEC134 C738
Contextual Info: N AMER PHILIPS/DISCRETE tbS3T31 0G11715 fl □ LE D 1N3889 to 1N3893 T ~ 0 3 - 17 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.

Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC 95D 0291 3 D 7"— J re » ? Devices, Inc MEDIUM TO HIGH VOLTAGE CHIP NUMBER PN EPITAXIAL PLANAR POW ER DIODE CONTACT METALLIZATION Anode: > 50,000 À Aluminum Cathode: Gold (Polished silicon or "Chrome Nickel Silver" also available

Contextual Info: S E H I T R O N . INDUSTRIES LTD M3E D • S i a ? » 1 000018t, è B S L C B T-<B-n IN3889-IN3893 SERIES Fast Recovery Rectifier 12 Amp Silicon Diode FEATURES ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current .45") 11.5 max

1N3891 equivalent

Abstract: 12v diode 10A
Contextual Info: -Jolìtrm i Devices. Inc. [^ @QJJ©T ©ATTM, ' MEDIUM TO HIGH VOLTAGE CHIP N UM BER PINI EPITAXIAL PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:

Contextual Info: 1N3889 R THRU 1N3893(R) DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 12A High Surge Capability 12Amp Rectifier 50-400 Volts Types Up to 400V VRRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175

1N3889

Abstract: 1N3890 1N3891 1N3892 12v diode 10A
Contextual Info: ^Æ ittran ra E> !J Tr © ÄTTÄIL©( MEDIUM TO HIGH VOLTAGE Devices. Inc. CHIP NUMBER PN EPITAXIAL PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available on:

solitron rectifier

Abstract: NS6002 NS6000 NS12006 NS6001 NS30001
Contextual Info: rectifiers 21 FAST SWITCHING Medium Power Fast Recovery Double-Diffused Silicon Rectifier Diodes (6A Series) CASE STYLE J Jedec Type Solitron Part Numbers PIV Jedec Type 1N3879 NS6000 50 1N3909 NS30000 50 1N3880 NS6001 100 1N3910 NS30001 100 1N3881 NS6002

BYV 200

Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Contextual Info: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220

I2FL40S02

Abstract: I2FL20S02
Contextual Info: Fast Recovery Diodes International IOR Rectifier VfM M •fsm Part VRRM V Number I Fa v @ t c (A) (C) SO Hz (A) 60Hz (A) 1F(AV) (V) R JC (°C/W) t„ (nS) Notes Fox on Demand Number Outline Key Discrete I2FLI0SO2 100 12 100 145 150 1 40 2.0 200 2 5 3 4