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    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    MR1367

    Abstract: MR830 IN3889 1N3879-1N3883 1n49331n4937 1N3880 1N3891 1N3892 1N3893 1N4937
    Text: ● FAST RECOVERY SILICON RECTIFIERS vRM rep 50 100 ‘RM(wkg)’ 12 I 1 20 * Fi~re 1N3880 - I I.-,NIRQO - I I 30 thru 1N3SS3 11 N3SS9 thru 1N3S93 ‘lN~~99 thru WW3903 ● 200 ‘R(volts) 300 400 ● 600 , I I 11 N3S79 ● lFM(surge)* Ampere Ampere


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    PDF 1N3880 WW3903 1N3S93 1N4937 45MAX L17H0 MR1367 MR830 IN3889 1N3879-1N3883 1n49331n4937 1N3880 1N3891 1N3892 1N3893 1N4937

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    1N3809-93

    Abstract: 1N3809 1N3889 1N3890 1N3891 1N3893 1N3889R IN3892R
    Text: Silicon IN3889-93.R Rectifiers FAST RECOVERY F eatures: • F ast Recovery Time . . . 200 Nanoseconds Maximum • Diffused Construction • F or Use i n : — Inverters — Choppers — Low R F Interference Applications — Free-W heeling Rectifier Applications


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    PDF IN3889-93 1N3890 1N3891 IN3892 1N3893 1N3889 1N3809-93 1N3809 1N3889R IN3892R

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    Abstract: No abstract text available
    Text: S E H I T R O N . INDUSTRIES LTD M3E D • S i a ? » 1 000018t, è B S L C B T-<B-n IN3889-IN3893 SERIES Fast Recovery Rectifier 12 Amp Silicon Diode FEATURES ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current .45") 11.5 max


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    PDF 000018t, IN3889-IN3893 7/16th DO-35 DO-15 DO-201AD

    IN3889-IN3893

    Abstract: 1n3890 diode 1N3891 B137 1N3889 1N3890 1N3892 1N3893 "current reference"
    Text: S E H I T R O N . INDUSTRIES LTD M3E D • S i a ? » 1 000018t, è B S L C B IN3889-IN3893 SERIES T - < B - n Fast Recovery Rectifier 12 Amp Silicon Diode FEATURES ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current .45") 11.5


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    PDF IN3889-IN3893 7/16th S010A 14nSec, 1n3890 diode 1N3891 B137 1N3889 1N3890 1N3892 1N3893 "current reference"

    1N5331 Diode

    Abstract: A78A 1N1612 1N5331 IN3892R general electric
    Text: FAST RECOVERY RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 !j 600 § 500 s 400 5 300 § H _l O > 200 z fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES STANDARD RECTIFIERS SELECTOR GUIDE 3000 V3 2000 1500 n


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    PDF 1N1612-16 1N1341A-48A 1N3987-90 1N3879-83 1N1199A-1206A 1N3670A-73A 1N5331 1N3889-93 1N4510-11 1N5331 Diode A78A 1N1612 IN3892R general electric

    TIC2260

    Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184
    Text: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500


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    PDF DDQD035 MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A TIC2260 C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184

    I2FL40S02

    Abstract: I2FL20S02
    Text: Fast Recovery Diodes International IOR Rectifier VfM M •fsm Part VRRM V Number I Fa v @ t c (A) (C) SO Hz (A) 60Hz (A) 1F(AV) (V) R JC (°C/W) t„ (nS) Notes Fox on Demand Number Outline Key Discrete I2FLI0SO2 100 12 100 145 150 1 40 2.0 200 2 5 3 4


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    PDF I2FLI0S05 I2FL20S02 12FL20S05 I2FL40S02 I2FL40S05 12FL60S02 I2FL60S05 12FL80S05 IN3889 1N3890

    TIC2260

    Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834
    Text: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200


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    PDF MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A IN2154 TIC2260 t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834

    SD5115

    Abstract: IN3492 in1615 IN1202A IN5829 IN3495 IN3491 in3493 IN3880 2N15
    Text: GENERAL PURPOSE RECTIFOSS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE102553511 n""""35 11I 820 00035 o r ~ O f - o / lo A V ER A G E REC TIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM V FM Ca s é 3 3


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    PDF MR500 MR501 MR502 MR504 MR506 MR508 MR510 IN3491 IN3492 IN3493 SD5115 in1615 IN1202A IN5829 IN3495 IN3880 2N15

    TIC2260

    Abstract: IN3491 IN1202 IN3492 IN5829 IN1204 IN1190 IN1184 SC141D IN3495
    Text: r lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500 MR501 IN5400 IN5401 ÍN1612 IN1613 MR502 IN5402 IN1614 IN1341A IN1342A IN1343A IN1344A MR504 IN5404 ¡N1615 MR506 IN5406


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    PDF MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A N2154 TIC2260 IN3491 IN1202 IN3492 IN5829 IN1204 IN1190 IN1184 SC141D IN3495

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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