1N411B Search Results

N413

Abstract: 1N4713 1n4716 1N3528 1N3529 1N4117 1N4119 1N411B 1N4120 1N4710
Contextual Info: zen er Diodes POWER Continued 250 mW 400 mW CASE DO-35 ZENER VOLTAGE LOW NOISE LOW LEVEL 25 1N4117 1N411B 1N4119 1N4120 1N4121 1N4122 1N4123 1N4124 1N4125 1N4126 1N4127 1N4128* 1N4129* 1N4130* 1N4131* 1N4132* 1N4133* 1N4134* 1N4135* 27 28 30 33 36 39 43

Contextual Info: 1N411B Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current50 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.525¥ V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)50 @Temp. (øC) (Test Condition)175#

1N412B

Abstract: 1N411B 1N413B 1N411B-1N413B
Contextual Info: 1N411B-1N413B High Current Rectifier VRRM = 50-200V, IF AV = 100 A ,VF = 1.2V Symbol A K Cathode to Stud Symbol Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Symbol Parameter 1N411B 1N412B 1N413B Unit

Contextual Info: Zener Diodes POWER Continued 400 mW 250 mW CASE DO-35 ZENER VOLTAGE LOW NOISE LOW LEVEL 25 1N4117 1N4710 27 1N411B 1N4711 28 1N4119 1N4712 30 1N4120 1N4713 1N3529 33 1N4121 1N4714 1N3530 36 1N4122 1N4715 1N3531 1N3532 LOW LEVEL 39 1N4123 1N4716 43 1N4124

1N1398

Abstract: 1N1399 1N1396 1N1397 1N2426 1N2427 1N3139 1N3140 1N3288 1N411B
Contextual Info: Silicon Power Rectifier N32 88—1N3297 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 U N F -3 A 2. Full th re ad s within 2 1 /2 threads 3. Standard p olarity; Stud is Cathode Reverse p olarity; Stud is Anode

1N413B

Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1/ 2 threads 3. Standard polarity: Stud is Cathode Reverse polarity: Stud is Anode

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

1n3291s

Contextual Info: Silicon Power R e c t i f i e r Dim. Inches M illim e te r M inim um M axim um A B C D F G H J K M R S M inim um M axim um - - - - 1.0 4 0 1.0 6 0 1.166 4 .6 5 .6 4 0 .2 3 3 .7 4 5 .3 7 3 .2 8 6 .6 7 0 .8 5 0 .120 2 6 .6 7 2 6 .9 2 29.61

Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is Cathode Reverse polarity. Stud is Anode

S4290

Abstract: 1N2437 IN139 s4205 1N1397 1N2426 1N2427 1N2436 1N3139 1N411B
Contextual Info: Series 42 I B B Avalanche Silicon Power Rectifiers E L E C T R IC A L C H A R A C T E R IS T IC S : M a x im u m A v e ra g e F o r w a r d C u rre n t, S in g le P h a se H a lf W a v e DC R a tin g a t 1 3 0 ° C . C a s e T e m p e ra tu re . 125 am p e re s

1N1399

Abstract: 1N1396 1N1397 1N2426 1N2427 1N3139 1N3140 1N3288 1N3297 1N411B
Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity; Stud is Cathode Reverse polarity: Stud is Anode

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

IN4054R

Abstract: IN4048R IN4045 1N2131 IN3294 B 1186a 1N1202 1N1201 IN4056R IN4048
Contextual Info: S E M IC O N D U C T O R S IN C CHE D f fil3 b tiS 0 Q DO DSbB 0 | Silicon Power Rectifiers 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582, 1N2492 1N1343, 1N1343A, 1N1343B

1N314

Abstract: 1N4588
Contextual Info: Standard Recovery Rectifiers Part Number Microsemi Division Package Outline Type Mil Spec Data Sheet ID IO lA-i-ps Microsemi VR IFSM VC *5 ID Volt») (Amps) (Volts) IR (uA) ; trr (nsec) 1N3296A 1N3297 1N3297A 1N1660 1N1661 1N1662 1N1663 1N1664 1N1665 1N1666

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

1N4539

Abstract: SOLID STATE INC 1N4588 1N2438 1N1396 1N1397 1N1398 1N2426 1N2427 1N2428
Contextual Info: Silicon Power Rectifier D08 NOTES: 1. T he devtce w ith ex ce p tio n 0< Che h u a j c « . ttw e a d j n d fU itb U '»*<3 e x ten sio n lie* w ith in th e c y lin d e r d«1w>til b y 0 « n u 1 .0 6 3 M U a . and le n g th 2 .S 0 0 W ax. 2 . A n g u la r o rie n ta tio n e f U f m iiU l w it h m p e c t ta i w x i j c n i l p o rtio n