1N4588 Search Results

Contextual Info: 1N4588 R thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 1 2 2 1 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Contextual Info: 1N4588 R thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 800 V IF =150 A Features • High Surge Capability • Types from 200 V to 800 V VRRM DO-8 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode.

Contextual Info: 1N4588 R thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 1 2 1 2 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

1N4588R

Abstract: 1N4588
Contextual Info: 1N4588 R thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 1 2 1 2 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201

Contextual Info: 1N4594 R thru 1N4596(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 2 1 2 1 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

1N2437

Abstract: D0-205AA S4380 1N2436 1N2438 1N2439 1N2440 1N3288A 1N4587 S4310
Contextual Info: Silicon Power Rectifier S / R 4 3 Series Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R T AA 1 1.050 -4.30 .610 .213 -.344 .276 .465 -1.426 .427 - .407 OD 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1 /2 threads

tic 1060

Abstract: S4330 1N4588 1N3295A
Contextual Info: Silicon Power Rectifier S / R 4 3 Series Dim. Inches ~H M h - Minimum Maximum Minimum Maximum Notes AA B »I A B C D F G H J K M R T AA -c— - J I L- - r . I T-rr 1 A < A 1 ^ DD DD cc Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1N1120

Abstract: 1N2484 1N342 1N2226
Contextual Info: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500

Contextual Info: 1N4594 R thru 1N4596(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 2 1 1 2 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

1N3289A

Abstract: S4320 1N2436 1N2437 1N2438 1N2439 1N2440 1N3288A 1N4587 S4310
Contextual Info: Silicon Power Rectifier S / R 4 3 Series :° > i H Mh I AA B » I ♦S4330 Peak Reverse Voltage JEDEC Numbers Microsemi Catalog Number 1N2436 1N2437 1N2438 1N2439 1N2440 1N2441 1N2442 1N2443 1N2444 1N2445 1N3288A _ _ _ 1.050 1.060 1.166 4.70 .640 .233

S/R43 SERIES

Abstract: 1N2436 1N2437 1N2438 1N2439 1N2440 1N3288A 1N3289A 1N4587 S4310
Contextual Info: Silicon Dower Rectifier s / R4I-3 Series —I MI— <0>I A B C D F G H J K M R T AA PP DD I - C - Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Accepts 1 / 4 - 2 8 UNF-2B Nut 4. Reverse polarity: Stud is Anode ♦S4320 ♦S4330

IN4054R

Abstract: IN4048R IN4045 1N2131 IN3294 B 1186a 1N1202 1N1201 IN4056R IN4048
Contextual Info: S E M IC O N D U C T O R S IN C CHE D f fil3 b tiS 0 Q DO DSbB 0 | Silicon Power Rectifiers 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582, 1N2492 1N1343, 1N1343A, 1N1343B

1N314

Abstract: 1N4588
Contextual Info: Standard Recovery Rectifiers Part Number Microsemi Division Package Outline Type Mil Spec Data Sheet ID IO lA-i-ps Microsemi VR IFSM VC *5 ID Volt») (Amps) (Volts) IR (uA) ; trr (nsec) 1N3296A 1N3297 1N3297A 1N1660 1N1661 1N1662 1N1663 1N1664 1N1665 1N1666

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

1N4539

Abstract: SOLID STATE INC 1N4588 1N2438 1N1396 1N1397 1N1398 1N2426 1N2427 1N2428
Contextual Info: Silicon Power Rectifier D08 NOTES: 1. T he devtce w ith ex ce p tio n 0< Che h u a j c « . ttw e a d j n d fU itb U '»*<3 e x ten sio n lie* w ith in th e c y lin d e r d«1w>til b y 0 « n u 1 .0 6 3 M U a . and le n g th 2 .S 0 0 W ax. 2 . A n g u la r o rie n ta tio n e f U f m iiU l w it h m p e c t ta i w x i j c n i l p o rtio n

1N4595

Contextual Info: S O L I D S T A T E IN C . 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com N O TE S : 1. D08 The device w ith exception of the hexagon, thread and flex ib le lead extension lies w ith in the cylinder defined by O im . 1.0 6 3 M a x . and