1N4150, 1N4150 Search Results

in3600

Abstract: IN4150 1N3600 MIL-PRF-19500/231 1N4150 1N4150-1 D0-35
Contextual Info: • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N4150 and 1N4150-1 and 1N3600 • DOUBLE PLUG CONSTRUCTION

in3600

Contextual Info: • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 1N4150 and 1N4150-1 and 1N3600 •SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED . DOUBLE PLUG CONSTRUCTION

IN3600

Abstract: IN4150 1N3600 1N4150 1N4150-1 D0-35
Contextual Info: • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N4150 and 1N4150-1 and 1N3600 • DOUBLE PLUG CONSTRUCTION

1n3600

Abstract: 1N4150 1n3600 chip
Contextual Info: P O M P I JTFR DIODF W I T ,r u 1 L/IV7t/U 200rnA Low Power, Switching 1N3600; JAN, JANTX & JANTXV I N 3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • This series of switching diodes is useful in many computer sw itching applications, for

Contextual Info: n O M P U T F P niOHF ; ; nm r u 1 L“rv 200m A Low Power, Switching I N 3600; JAN, JAN TX & JANTXV 1N3600 1N4150; JAN, JAN TX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • T h is series of sw itching d iodes is useful in

1N4150

Abstract: 1N4151 equivalent 1N4148 1n4148 die 1n4150 equivalent
Contextual Info: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2012-07-03 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung

1N4150

Abstract: 1N4151 MAM246 1n4150 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4150; 1N4151 High-speed diodes Product specification Supersedes data of 1996 Sep 03 1999 Jun 01 Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151 FEATURES DESCRIPTION • Hermetically sealed leaded glass

1N4148

Abstract: 1N4531 1N4448 1N4150 1N4148 ROHM ROHM 1N4531 do-34 rohm
Contextual Info: 1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes Switching diode 1N4531 / 1N4148 / 1N4150 / 1N4448 ∗This product is available only outside of Japan. zExternal dimensions Units : mm zApplication High-speed switching 1N4531 CATHODE BAND (BLACK) Type No. zFeatures

1N4148

Abstract: 1N4448 1N4150 1N4151 1N4150 DIE LL4148 LL4150 LL4151 1N4151 equivalent 1n4150 equivalent
Contextual Info: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2011-09-23 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung

1N4151 equivalent

Abstract: 1n4150 1N4150 DIE 1n4150 equivalent 1n4148 die 1N4148 equivalent 1n4150 1N4148, SOD-27
Contextual Info: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2012-05-10 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung

1N4148 SMD

Abstract: 1N4148 equivalent SMD diode 1N4148 SMD equivalent components of 1N4148 1N4148 diode SMD type 1n4148 die 1N4150 1N4148 J 1N4151 1N4151
Contextual Info: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2005-08-15 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung

1N4148

Abstract: 1N4150 1N4448 1N4531
Contextual Info: 1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes Switching diode 1N4531 / 1N4148 / 1N4150 / 1N4448 ∗This product is available only outside of Japan. zExternal dimensions Units : mm zApplication High-speed switching 1N4531 CATHODE BAND (BLACK) Type No. zFeatures

Contextual Info: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C

1n4148 trr

Abstract: 1N4148 1N4150
Contextual Info: 1N4148 / 1N4150 / 1N4448 Diodes Switching diode 1N4148 / 1N4150 / 1N4448 ∗This product is available only outside of Japan. zExternal dimensions Unit : mm zApplication High-speed switching CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (GSD) 2) High speed.

1N4150

Abstract: 1N4151 1N4150 Philips 1N4153 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4150; 1N4151; 1N4153 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151; 1N4153

equivalent+1n4150

Contextual Info: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2005-08-15 Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.100 V

1N4150

Abstract: 1N4151 1N4153 1n4150 philips MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4150; 1N4151; 1N4153 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 19 Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151; 1N4153

1N4148

Abstract: 1N4150 1N4448 1N4531 1N914B
Contextual Info: 1N4148 / 1N4150 / 1N4448 Diodes Switching diode 1N4148 / 1N4150 / 1N4448 ∗This product is available only outside of Japan. zExternal dimensions Unit : mm zApplication High-speed switching CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (GSD) 2) High speed.

in3600

Abstract: 1N4150 1N4150 JANTXV JANTX 1N4150 1N3600 IN4150 JANTX 1N4150-1 1N4150-1 JANTXV1N3600 JTXV1N3600
Contextual Info: POMPI ITFP ninnF I U lW U t V s V S I V ir U 2 0 0 rnA Low Power, Switching 1N3600; JAN, JAN TX & JANTXV 1N3600 1N4150; JAN, JAN TX & JANTXV 1N4150 JAN, JAN TX & JANTXV 1N4150-1 FEATU RES DESCRIPTION • • • • T h is serie s of sw itc h in g d io d es is u seful in

CI 4026

Abstract: ic 4026 4026 IC 1N4150 1N4150-1
Contextual Info: Silicon Switching Diode 1N4150 Applications DO-35 Glass Package 11NNor1 or 1N4150-1 1N Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded

1n4150 equivalent

Abstract: 1N4148 1N4150
Contextual Info: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2012-07-30 Max. power dissipation Max. Verlustleistung ±0.4 3.9 62.5 ±3 Ø 1.9 ±0.1 Ø max 0.5 Dimensions - Maße [mm]

1N4150 metallurgically

Abstract: 1N4150-1
Contextual Info: FEATURES 1N4150-1 • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/231 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

D1N4150

Contextual Info: 1N4150 SENSITRON SEMICONDUCTOR FAST SWITCHING DIODE Data Sheet 2769, Rev. - Features ! Fast Switching Speed ! ! ! Glass Package Version for High Reliability High Conductance Available in Both Through-Hole and Surface Mount Versions A B A C D 1N4150 Mechanical Data

Contextual Info: 1N4150 SENSITRON SEMICONDUCTOR FAST SWITCHING DIODE Data Sheet 2769, Rev. - Features ! Fast Switching Speed ! ! ! Glass Package Version for High Reliability High Conductance Available in Both Through-Hole and Surface Mount Versions A B A C D 1N4150 Mechanical Data