1N430 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 1N3064, 1N4305, 1N4454 SWITCHING RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit WIV 50 V Average rectified current IO 100 mA Forward current steady state IF 300 mA Recurrent peak forward current if 400 mA if surge 1.0 4.0 A Power dissipation

Contextual Info: 1N4300 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage11.3 @I(Z) (A) (Test Condition)150 Tolerance (%)5 P(D) Max. (W)10 Z(z) Max. (ê) Dyn. Imped.1.6 Temp Coef pp/10k.50 Maximum Operating Temp (øC)75Ï Package StyleDO-4

1N4305

Abstract: 1N4305 Fairchild
Contextual Info: 1N4305 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current 300 mA IFSM Non-repetitive Peak Forward Surge Current

Contextual Info: 1N4306M Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit2 I(F) Max. (A) Forward Current75m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time4.0n @I(F) (A) (Test Condition)10m

Contextual Info: 1N4309 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current400m V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time2n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)1m V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)400m

Contextual Info: 1N4304 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage11.3 @I(Z) (A) (Test Condition)750m Tolerance (%)5 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped.80 Temp Coef pp/10k.50 Maximum Operating Temp (øC)75Ï Package StyleDO-5

Contextual Info: 1N4302 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage8.8 @I(Z) (A) (Test Condition)1 Tolerance (%)5 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped.60 Temp Coef pp/10k.50 Maximum Operating Temp (øC)75Ï Package StyleDO-5

1N430A

Abstract: 1N430B 1N433A HP 4066 1N433B hp 5960 marking BVV 120-SECOND
Contextual Info: MIL-S-1950 0/3 35 EL 28 June 1 9 6 5 MILITARY SPECIFICATION SEMICONDUCTOR DIODE, SILIC O N , VOLTAGE REFERENCE (TEMPERATURE-STABLE) TYPES 1N430A, ÎN 4308 1. SCOPE 1.1 Scope, - This specification covers the detail requirements for silicon, low1. i _ _ j._ 1

Contextual Info: 1N4152, 1N4305, 1N4444 COMPUTER DIODE Switching FEATURES • Metallurgical Bond 1N4152 1N4305 • Planar Passivated Peak Reverse V oltage. 4 0 V .7 5 V .70V . • DO-35 Package Reverse Working V oltag e . 3 0 V .5 0 V .50V .

1N3064

Abstract: 1N4454 1N4305
Contextual Info: □ BE D I 1 1 7 ^ 0 3 B K C INT ERN ATIONAL □□□QEflD b T-Ô3- av 1N3064 1N4305 1N4454 ULTRA FAST LOW CAPACITANCE DIODES ABSOLUTE MAXIMUM RATINGS • T_ • B„ •C C athode end .0 2 0 ' DIH 0 .5 O IK 4.0 ns @ L = 10 mA, L = 10 mA, Vn = 1.0 V 75 V MIN

Contextual Info: 1N4305 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current 300 mA IFSM Non-repetitive Peak Forward Surge Current

Contextual Info: 1N4306M+JAN Diodes Array of Independent Diodes Military/High-RelY @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit2 I(F) Max. (A) Forward Current75m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time4.0n @I(F) (A) (Test Condition)10m

1N430B

Contextual Info: 1N430B Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage8.4 @I(Z) (A) (Test Condition)10m Tolerance (%)5 P(D) Max. (W)250m Z(z) Max. (ê) Dyn. Imped.15 Temp Coef pp/10k.10 Maximum Operating Temp (øC)150’

1N4305

Abstract: DIODE ED 34 1N4305M LL4305 IF250
Contextual Info: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4305 1N4305M LL4305 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n

Contextual Info: 1N4306M+JANTXV Diodes Array of Independent Diodes Military/High-RelY @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit2 I(F) Max. (A) Forward Current75m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time4.0n @I(F) (A) (Test Condition)10m

1n4307

Contextual Info: 1N4307 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package4 Diodes Per Circuit1 I(F) Max. (A) Forward Current75m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time2.0n @I(F) (A) (Test Condition)10m

Contextual Info: 1N4307M+JANTXV Diodes Array of Independent Diodes Military/High-RelY @Temp øC (Test Condition) Circuits Per Package4 Diodes Per Circuit4 I(F) Max. (A) Forward Current75m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time4.0n @I(F) (A) (Test Condition)10m

Contextual Info: 1N4306 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current75m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time2.0n @I(F) (A) (Test Condition)10m

1N4454

Abstract: 1N3064 DSAIH0002547
Contextual Info: □ BE D I 1 1 7 ^ 0 3 B K C INTER NAT IONAL □□□QEflD b T-Ô 3- aq 1N3064 1N4305 1N4454 ULTRA FAST LOW CAPACITANCE DIODES ABSOLUTE MAXIMUM RATINGS • T_ • B„ • C C a th o d e end .0 2 0 ' D IH 0 .5 OIK 4.0 ns @ L = 10 mA, L = 10 mA, Vn = 1.0 V

IN4305

Abstract: BU 4532
Contextual Info: TYPES IN4305, 1N4444. 1N4454 SILICON SWITCHING DIODES BU LL ET IN NO. DL-S 699266, OCTO BER 1 9 6 6 -R E V IS E D AUGU ST 1969 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents 1N4305 . . 1N 3063 . . 1N4532 1N4454 . . . 1N 3064

1N4444

Contextual Info: TYPES 1N430S, 1N4444. 1N4454 SILICON SWITCHING DIODES BU LL ET IN NO. DL-S 699266, OCTOBER 1 9 6 6 -R E V IS E D AUGU ST 1969 FA ST SW IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents 1N4305 . . 1N3063 . . . 1N4532 1N4454 . 1N3064

1N4301

Contextual Info: 1N4301 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage8.8 @I(Z) (A) (Test Condition)1 Tolerance (%)5 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped.60 Temp Coef pp/10k1.0 Maximum Operating Temp (øC)75Ï Package StyleDO-5

Contextual Info: 1N430A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage8.4 @I(Z) (A) (Test Condition)10m Tolerance (%)5 P(D) Max. (W)250m Z(z) Max. (ê) Dyn. Imped.15 Temp Coef pp/10k.10 Maximum Operating Temp (øC)100’

1N430

Contextual Info: 1N430 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage8.4 @I(Z) (A) (Test Condition)10m Tolerance (%)5 P(D) Max. (W)250m Z(z) Max. (ê) Dyn. Imped.15 Temp Coef pp/10k.20 Maximum Operating Temp (øC)100’ Package StyleStR-18