1N4450 Search Results

1N4447-A

Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

1N4450

Abstract: DO-204AH
Contextual Info: 1N4450 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4)

Contextual Info: MICROSEtll CORP/ WATERTOWN SDE D • cJ347cîb3 ODläata 511 ■ U N I T COMPUTER DIODE 1N4450J.N4451, 1N4453 Switching T -e J -a l FEATURES • Metallurgical Bond • Planar Passivated • DO-35 Package ABSOLUTE MAXIMUM RATINGS, AT 25'C 1N4450 1N4451 1N4453

Contextual Info: 1N4450, 1N4451, 1N4453 COMPUTER DIODE Switching ABSOLUTE MAXIMUM RATINGS, AT 25 °C FEATURES 1N4450 1N4451 1N4453 Peak Reverse Voltage. 4 0 V . 4 0 V . 3 0 V . Reverse Working Voltage. 3 0 V . 3 0 V . 2 0 V .

1N4450

Abstract: DO-204AH
Contextual Info: Certificate TH97/10561QM 1N4450 Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min.

Contextual Info: 1N4450 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • • • • High switching speed: max. 4 ns Reverse voltage:max. 30 V Peak reverse voltage:max. 40 V Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4)

Contextual Info: DIGITRON SEMICONDUCTORS 1N4450 SWITCHING RECTIFIER MAXIMUM RATINGS Symbol Value Unit Maximum peak reverse voltage Rating VRM 40 V Maximum reverse voltage VR 30 V Maximum forward DC current IF 250 mA Maximum average forward current IF AV 200 mA Maximum surge forward current @ tp = 1µs

1N4450

Abstract: BKC Semiconductors DSAIH0002560 1N6641
Contextual Info: Silicon Switching Diodes Use Advantages 1 1N6639 1N6640 1N6641 DO-35 Hard Glass Package High Rel. Voidless General purpose fast diodes with rugged voidless hard glass tungsten design. Able to replace lower power, less robust types like 1N4150-1 and 1N4450-1.

1N4532

Abstract: 1N4448-A 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531 1N4533
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

1N4532

Abstract: 1S954 1N4536 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

1N4453

Abstract: 1N4450 1N4451
Contextual Info: COMPUTER DIODE 1N4450, 1N4451, 1N4453 Switching FEATURES DESCRIPTION • M etallurgical Bond • Planar Passivated • DO-35 Package T his series offers M etallurgical Bonding and is very popular for general purpose sw itching applications. ABSO LUTE MAXIMUM RATINGS, AT 25 °C

1N6641

Contextual Info: 1N6639 1N6640 1N6641 Silicon Switching Diodes Use Advantages E DO-35 Hard Glass Package High Rel. Voidless General purpose fast diodes with rugged voidless hard glass tungsten design. Able to replace lower power types like 1N4150-1 and 1N4450-1. For use in hostile environments and applications where strength, thermal

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

FDS01503

Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
Contextual Info: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end

SS321

Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

Contextual Info: $ 4 # — K /D iodes IN S e rie s • JEDEC 1N Series 1 -K Switching Diodes JEDEC Standards • [2/Dimensions Unit : mm JED EC « fè&LLZ, £<7>1N v ' J - X f c t l i t l , T Î S ^ Î - Î '< 7 ) T '^ W < tc è^ \ 1N Series conforming to JEDEC Standards are also available so that

Contextual Info: SWITCHING DIODES 200mW Part# Peak Voltage Continous Reverse Current VI B V 1N914 1N914A 1N914B I r <"A> 100 100 100 @ Forward Voltage VR (V) 5000 @ 5000 @ 5000 @ Capacitance C Maximum Reverse Recovery Time VF (V) @ lF (mA) <PF) V (n S ) 1.0 1.0 1.0 @ @ @

FDS01201

Abstract: FDS04148 FDS01203 FSD01200 FDS01503 FDS01501 1N459 equivalent FDS01202 1N627 FDS01703
Contextual Info: £ 3 National Semiconductor Surface Mount Diodes S> m 3: n O O General Purpose & Specialty Diodes PLASTIC PACKAGE Description Pkg. No. Pin Out By (V Min - I I Device Vr V Vp (V> Max 1000 75 0.715 1.0 0.855 10.0 1.1 50.0 1.3 100.0 1.0 100 See BAS 16 See BAS 16

AMERICAN POWER DEVICES 1n914

Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
Contextual Info: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V

Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

1N4149

Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Contextual Info: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm

bav20 itt

Abstract: BAV21 ITT WG713 1n4148 ITT 1N914 ITT BA201 BAV17 BAV18 BAV19 BAV20
Contextual Info: SILICON DIODES I T T Û7 SEMICONDUCTORS dË T | 4kf lHTSS 0a0S3Ht, 4 | ' G eneral Purpose and Sw itching Diodes in DO -35 Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­at25°C ture Tf Forward Voltage