1N453 Search Results

1N4536

Abstract: 1n4531
Contextual Info: TYPES 1N4531 THRU 1N4534, 1N4536 SILICON SWITCHING DIODES B U L L E T I N N O . D L -S 7 3 9 7 7 4 , M A R C H 1 9 6 7 - R E V I S E D M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents 1N4531 . . . 1N4148 . . . 1N914

75V 150mA Diode

Contextual Info: COMPUTER DIODE 1c i r 150mA Switching Diode vy i" 1N4153, JAN, JANTX & JANTXV I N 4153 1N4534, JAN, JANTX & JANTXV 1N4534 FEATURES • • • • DESCRIPTION This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery

transformer prv

Abstract: spark gap 1200v 4ja42ieh20abi 1N4532 SCR Handbook, General electric 1N4529 silicon controlled rectifier 1N4530 1N4531 1N4536
Contextual Info: CONTROLLED AVALANCHE I Silicon Rectifier 35A Avg. 1N4529-30 I 1N4531 SEE PAGE 205 1N4532-34 SEE PAGE 262 1N4536 SEE PAGE 205 Up to 1200V CONTROLLED AVALANCHE RECTIFIERS FROM GENERAL ELECTRIC Feature These Advances in Silicon Rectifier Diode Applications: Self-protection against norm al voltage transients. D issipates up to 12,000 w atts

1N4151 equivalent

Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4151 1N4153 1N4154 1N4454 MHD618 in4454
Contextual Info: 1N4154 S E E PAG E 205 Silicon r -— i Diodes 1N4151.2.3 1N4454 1N4532,3,4 This fam ily of General Electric silicon signal diodes are very high speed sw itching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar struc­

1N4447-A

Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

1N4532

Abstract: IN4532 S0068 1N4531 IN4531 IR 10D DIODE
Contextual Info: Philips Semiconductors Product specification High-speed diodes 1N4531 ; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leadedglass SOD68 DO-34 package The 1N4531, 1 N4532 are high-speed switching diodesfabricated in planar technology, and encapsulated in hermetically sealed leaded glass

1N4532

Abstract: 1N4531
Contextual Info: • ^ 5 3 1 3 1 □Q2bci0b Til ■ APX N AMER PHILIPS/DISCRETE 1N4531 1N4532 blE T> HIGH-SPEED SILICON DIODES Diodes in the sub-m iniature DO -34 envelope intended fo r fast logic and general purpose applications. Because o f th e ir small size the diodes are especially suitable fo r m o u n tin g in m in ia tu re assemblies e.g.

IN3064

Abstract: in4454 1N4454 diode in3064 1N3064 1N4532 diode 1n4454 1N4454-1 JANTX1N3064
Contextual Info: COMPUTER D ODE JAN &JANTX1N3064 4454; JAN, JANTX & JANTXV 1N4454 ja n , j a n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 V s V S IV iru I u rv U I \ J U C. in General Purpose Switch¡ng ABSOLUTE MAXIMUM RATINGS, AT 25°C FEATURES R e v e rse B re a k d o w n V o ltag e .7 5 V

9364

Abstract: 175C 1N4531
Contextual Info: B K C INTERNATIONAL 30E » • 117=^03 0G003Sb 2 ■ "T-Cfé-O0! BKC INTERNATIONAL ELECTRONICS, INC. LAWRENCE, MA. 01841 TEL. 681-0392 DATA SHEET for 1N4531 DO-34 MAXIMUM RATING: V( BR) Io SURGE Top Tstg PW 100V 200mA 1/120S .5A -65C TO +175C -65C TO 20ÖC

1N4532

Abstract: 1N4531
Contextual Info: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings Ta = 25oC Continuous Reverse Voltage Repetitive Peak Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Symbol Value Unit VR 75 V VRRM 75

Contextual Info: 1N4533 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N4533 Availability Online Store

Contextual Info: Silicon Switching Diode Series 1N4531 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings @ 25°C Operating & Storage Temperature: -65°C to +175°C

DL-41 package

Contextual Info: Micmsemi Ultra Fast Rectifiers 1N4532 UES1001 UF105 UF105SM UFS105G UFS105J DLSF11 ER1A ES1A SF11 UF4001 UF4001GP UES1002 UF110 UF110SM UFS110G UFS110J DLSF12 ER1B ES1B SF12 UF4002 UF4002GP UES1003 UF115 UF115SM UFS115G UFS115J DLSF13 DLSF14 ER1C ES1C SF13

Contextual Info: Silicon Zener Diode Series 1N4531 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings @ 25°C Operating Temperature: -65°C to +175°C Storage Temperature:

Contextual Info: Silicon Switching Diode DO-34 Glass Package 1N4534 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features DO-34 Glass Package • Six sigma quality • Metallurgical^ bonded

Contextual Info: TYPE 1N3064 SILICON SWITCHING DIODE B U L L E T IN N O . D L -S 7 3 9 1 1 4 , S E P T E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 9 7 3 FA ST SWITCHING DIODE • Rugged Double-Plug Construction • Electrically Equivalent to 1N4454 DO-35 and 1N4532 (DO-34)

in4454

Abstract: 1N3064
Contextual Info: COMPUTER DIODE w m r u I t n l/ iv / u c , ja n & ja n t x 1N3064 1N4454; JAN, JANTX & JANTXV 1N4454 ja n , ja n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 General Purpose Switching ABSOLUTE MAXIMUM RATINGS, XT 29*C Reverse Breakdown Voltage . 75V

MIL-PRF-19500/144

Abstract: 1N4532
Contextual Info: FEATURES 1N4532 • • • • • 1N4532 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, Sine, 1uS:

C 704 diode

Abstract: 1N4531
Contextual Info: Silicon Switching Diode Series 1N4531 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings @ 25°C Operating & Storage Temperature: -65°C to +175°C

MIL-PRF-19500/116

Abstract: 1N4531UR DO-213AA
Contextual Info: FEATURES 1N4531UR • 1N4531UR AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/116 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

BUK2114

Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
Contextual Info: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63

1N4531

Abstract: 1N4534 1N4536
Contextual Info: 1N4531 1N4534 1N4532 1N4536 1N4533 Diode, switching, leaded Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND <¿0 4 » 0 1 Features -f • available in DO-34 package

1N4148

Abstract: 1N4150 1N4448 1N4531
Contextual Info: 1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes Switching diode 1N4531 / 1N4148 / 1N4150 / 1N4448 ∗This product is available only outside of Japan. zExternal dimensions Units : mm zApplication High-speed switching 1N4531 CATHODE BAND (BLACK) Type No. zFeatures

in4531

Abstract: 1N4532 IN453 1N4531 IN4532 DO-34
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes