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    1N4767A Search Results

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    1N4767A Price and Stock

    Microchip Technology Inc 1N4767A

    DIODE ZENER 9.1V 500MW DO35
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    Microchip Technology Inc 1N4767A-TR

    DIODE ZENER TEMP COMPENSATED
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    Microchip Technology Inc 1N4767A/TR

    Zener Diodes Temperature Compensated
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    1N4767A Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N4767A Compensated Devices 9.1 VOLT NOMINAL ZENER VOLTAGE + 5% Original PDF
    1N4767A APD Semiconductor TEMPERATURE COMPENSATED ZENER DIODES Scan PDF
    1N4767A APD Semiconductor 250 mW, TC Zener Diodes, DO-7 Case Scan PDF
    1N4767A International Semiconductor Temperature Compensated Zener Reference Diodes, 11.7 Volt Nominal Zener Voltage Scan PDF
    1N4767A Microsemi 9.1 Volt Temperature Compensated Zener Reference Diodes Scan PDF
    1N4767A Microsemi Data Book 1983 Scan PDF
    1N4767A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N4767A Motorola European Master Selection Guide 1986 Scan PDF
    1N4767A Motorola Low-level temperature-compensated zener reference diode. Max voltage 0.028 V. Scan PDF
    1N4767A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N4767A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N4767A Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N4767A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N4767A STMicroelectronics Temperature Compensated Zener Diodes, DO-35 Scan PDF
    1N4767A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    1N4767A/TR Microchip Technology DIODE ZENER TEMP COMPENSATED Original PDF
    1N4767ATR Microsemi 9.1 V Temperature Compensated Zener Reference Diode Original PDF

    1N4767A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4770A

    Abstract: 1N4771A DO-204AA Package 1N4765 1N4774A 1N935 1N940 RH4769A
    Text: 1N4765 thru 1N4774A 9.1 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The 1N4765 thru 1N4774A series of Zero-TC Reference Diodes provides a selection of 9.1 V nominal voltages and temperature coefficients to as low as 0.0005%/oC for minimal voltage change with temperature when operated


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    PDF 1N4765 1N4774A 1N4774A DO-204AA) RH4774A. 1N4765 1N4770A 1N4771A DO-204AA Package 1N935 1N940 RH4769A

    1N3157A

    Abstract: motorola 239 zener AMERICAN POWER DEVICES 1N938
    Text: AMERICAN POWER DEVICES S'lE D LVJ 0737135 • • • • • 5 5 630 • A P D T r ^ - t o AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference to Motorola part numbers. For applications where output voltages must remain within narrow limits during changes in input voltage,


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    PDF DO-35 00DD115 1N3157A motorola 239 zener AMERICAN POWER DEVICES 1N938

    Untitled

    Abstract: No abstract text available
    Text: 1N4765 thru 1N4774A 9.1 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The 1N4765 thru 1N4774A series of Zero-TC Reference Diodes provides a selection of 9.1 V nominal voltages and temperature coefficients to as low as 0.0005%/oC for minimal voltage change with temperature when operated


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    PDF 1N4765 1N4774A 1N4774A DO-204AA) RH4774A. 1N4765

    IN4571

    Abstract: IN4568 IN4574 IN4565-IN4584 IN4765-IN4774 IN4581 IN4775-IN4784 IN4570A IN4567A IN4765
    Text: IN4565-IN4584 6.4 V * ~~0 IN4775-IN4784 $.5 v *5% IN4765-IN4774 9.1 v f 5% I I LOW-LEVEL TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Highly reliable passivated reference junction tion provides a rugged, @ Low Power sources for long-term Drain hermetically


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    PDF IN4565-IN4584 IN4775-IN4784 IN4765-IN4774 10YOof 1N4773A IN4571 IN4568 IN4574 IN4565-IN4584 IN4765-IN4774 IN4581 IN4775-IN4784 IN4570A IN4567A IN4765

    Zener Diode 3v 400mW

    Abstract: 1n821 "cross-reference" 1N825 apd 1N821-1N829 1n4575a "cross-reference"
    Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current


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    PDF 073713S 250mW, I713S DQQD114 Zener Diode 3v 400mW 1n821 "cross-reference" 1N825 apd 1N821-1N829 1n4575a "cross-reference"

    IN942

    Abstract: itt is 2.5-400 1N3156 1N3155 ITT GUIDE diode zener ITT zener diode AMERICAN POWER DEVICES 1N938
    Text: AMERICAN POWER DEVICES S3E D 0737135 00000S1 7 T C Z E N E R DIODES 400 mW & 500 mW, TC Type Zener Voltage Test MIn. Max. Current ITT 1N940 1N940A 1N940B V V 8.55 9.45 mA 7.5 tZener impedance is derived from the 1kHz supenmposed on the test current. DO-7 Case


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    PDF 00000S1 DO-35 00DD115 IN942 itt is 2.5-400 1N3156 1N3155 ITT GUIDE diode zener ITT zener diode AMERICAN POWER DEVICES 1N938

    1N315

    Abstract: 1N935
    Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current


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    PDF 073713S 250mW, DO-35 00DD115 1N315 1N935

    1N3155

    Abstract: 1N9351 AMERICAN POWER DEVICES 1N938
    Text: AMERICAN POWER DEVICES 23E D • D73713S 0000020 S • T ^ T F O T T C Z E N E R DIODES DO-7 Case 250 mW, TC DO-7 Case Typet Nominal Zener Voltage V+ V Z t «- i o 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4779A 1N4780 1N4780A 1N4781


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    PDF D73713S DO-35 00DD115 1N3155 1N9351 AMERICAN POWER DEVICES 1N938

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current


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    PDF 073713S 250mW, DO-35 3713S

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    1N4770A

    Abstract: 1N4773A equivalent 1N4768A 1N4770 1N4771 1N4771A 1N4772 1N4772A 1N4773 1N4773A
    Text: 1N 4765 thru 1N 4 77 4 A Microsemi Corp. $ The ciiode pxperTs SANTA ANA, CA SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 602 941-6300 FEATURES 9 1 V0LT 7cucd uni T ifim u i to/h _ TE C OM MPPEERNASTAU TR EE D ZENER REFERENCE D IO D E S . Z E N E R VOLTAGE 9.1 V ± 5


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    PDF J-175 RH4774A. 375-inches 1N4770A 1N4773A equivalent 1N4768A 1N4770 1N4771 1N4771A 1N4772 1N4772A 1N4773 1N4773A

    1N4774

    Abstract: 1N4788A 1N4370 1N4372 1N4549 1N4564 1N4565 1N4584 1N4765 1N4784
    Text: MOTO ROLA SC { DIODES/OPTOJ D E | b 3 b 7 2 5 S DD 7S027 2 | 1N4370 thru 1N4372 See Page 4-4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 1N4549 thru 1N4564 See Page 4-23 LOW -LEVEL T E M P E R A T U R E -C O M P E N S A T E D Z E N E R R E F E R E N C E D IO D E S


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    Untitled

    Abstract: No abstract text available
    Text: • 9.1 VOLT NOMINAL ZENER VOLTAGE ± 5% 1N4765 •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES thru 1N4774A • LOW CURRENT RANGE: 0.5 AND 1.0 mA • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C


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    PDF 1N4765 1N4774A 500mW 1N4765

    Untitled

    Abstract: No abstract text available
    Text: • 9.1 VOLT NOMINAL ZENER VOLTAGE -r 5°o 1N4765 •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LOW CURRENT RANGE: 0.5 AND 1.0 mA thru 1N4774A • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C


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    PDF 1N4765 1N4774A 500mW 1N4765 Z30E554

    temperature-compensated zener

    Abstract: ITT ZENER 1N825 ZENER 1N4772 1N4770A 1N4770 1N4773A 1N4771A 1N3497 1N821
    Text: FENWAL E L E C T R O N I C S / APD AB 63D DEÌ3Sm Sh3 00916 -f a V □□ □ o n t a " I" TCZENER DIODES T 250mW, TC Type DO-7 Case Zener Voltage Min. Max. vz V Vz V 1N825A 1N827 1N827A 1N829 1N829A 5.9 5.9 6.5 6.5 -5 5 -5 5 -5 5 -5 5 -5 5 °C t o +100 t o +100


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    PDF 250mW, 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 temperature-compensated zener ITT ZENER 1N825 ZENER 1N4772 1N4770A 1N4770 1N4773A 1N4771A 1N3497

    Untitled

    Abstract: No abstract text available
    Text: • 9.1 VOLT NOMINAL ZENER VOLTAGE + 5% 1N4765 •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES thru 1N4774A • LOW CURRENT RANGE: 0.5 AND 1.0 mA • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C


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    PDF 1N4765 1N4774A

    DO-204AA

    Abstract: JEDEC do-204aa MZ605 1N4782 1N4771A DO-204AA Package 1N4770A 1N4773A 1N4773 1N4772
    Text: For applications w here output voltage must remain within narrow limits during changes in input voltage, load resistance and temperature. Motorola guarantees all References D e­ vices to fall within the specified maximum voltage variations, A V z, at the specifically indicated test temperatures and test


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    PDF DO-204AA DO-204AH DO-35) PPM/1000 MZ605 MZ610 MZ620 JEDEC do-204aa 1N4782 1N4771A DO-204AA Package 1N4770A 1N4773A 1N4773 1N4772

    Untitled

    Abstract: No abstract text available
    Text: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N4765 thru TEM PER A TU R E CO M PENSA TED ZENER REFERENCE DIODES 1N4774A 9.1 V O L T N O M IN A L Z E N E R V O L T A G E L O W C U R R E N T R A N G E : 0.5 and 1.0 mA MAXIMUM RATINGS O p e ra tin g T e m p e ra tu re :


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    PDF 1N4765 1N4774A 1N4765 T0DD37Ã

    1N714

    Abstract: No abstract text available
    Text: Zener Regulator Diodes Part N um ber ZEN M icrosem i 1 Package D ivision O utline Type Mil S pec Microsemi Data P ow er i S heet ID W j Vz (V) Izt (mA) Zzt Z zk (C l) ( t i ) : (uA) IR VR Toi. (V) :(+/-%), 1N4772A S cottsdale DO-7 STD 2947 0.25 9.1 } 20 0


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    PDF DO-35 -213AA DO-213AA 1N714

    Untitled

    Abstract: No abstract text available
    Text: TC Z E N E R DIODES 250m W Part# 1N4765 1N4765A 1N4766 1N4766A 1N4767 Nom inal Zener Voltage Test Current M axim um Dynamic Impedance Voltage Temperature Stability Temperature Range Typical Temperature Coefficient VZ V •zT(n|A) Zzt I zt (0) AVct maximum (mV)


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    PDF 1N4765 1N4765A 1N4766 1N4766A 1N4767 1N4767A 1N4768 1N4768A 1N4769 1N4701

    1n4770a

    Abstract: 1N4773 1N4773A 1N4772 1N4771A 1N4771 1N4770 1N4765A 1N4766A 1N4767A
    Text: • 9.1 VOLT NOMINAL ZENER VOLTAGE -r 5°o 1N4765 •TEM PERATURE COMPENSATED ZENER REFERENCE DIODES • LOW CURRENT RANGE: 0.5 AND 1.0 mA thru 1N4774A • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C


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    PDF 1N4765 1N4774A 500mW 10/jA 20B554 1N4765 K0010 1n4770a 1N4773 1N4773A 1N4772 1N4771A 1N4771 1N4770 1N4765A 1N4766A 1N4767A

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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