1N485 Search Results

Contextual Info: 1N485B 1N485B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg

Contextual Info: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) ("A) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200

1N485B

Abstract: 1N486B
Contextual Info: 1N485B 1N486B Central Semiconductor Corp. central Semiconductor Corp. +1 SILICON DIODE JEDEC DO-35 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N485B, 1N486B types are silicon planar diodes designed for low leakage applications.

1n457a equivalent

Abstract: BAV45 diode pico-amp low-leakage silicon diode 1N3595 1N457A 1N459A 1N485B 1N6263 CDH300
Contextual Info: Silicon Diodes DO-35 Case Continued Low Leakage Diodes TYPE NO. 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 VRRM (V) MAX 70 200 200 150 150 150 IO (mA) MAX 200 200 200 150 200 200 VF (V) MAX 1.0 1.0 1.0 1.0 1.0 1.05 @ IF (mA) 100 100 100 200 200 200 IR @ VR

MMBD1502A

Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
Contextual Info: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200

1N485

Abstract: 05G433
Contextual Info: ALLEGRO MICROSYSTEMS INC T3 05G433Ö 0 0 0 3 7 6 7 1 • ALGR T-91-01 PROCESS TRO Process TRO Medium-Speed Switching Diode Process TRO produces a non-gold-doped silicon epitaxial diode used primarily as a medium-speed switching device. Designed to 1N485 specifications,

Contextual Info: Silicon Diodes DO-35 Case £3 Low Leakage Diodes lo Vf @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200 1.0

Contextual Info: 1N485 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current100m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage180 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.0 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)

Contextual Info: 1N485B+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage180 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

1N485

Abstract: 1N482 1n456 Q 0265 R 1n461 1n4828 1n462 1n464 1N484A texas instruments 1N457A
Contextual Info: TYPES 1N456 THRU 1N459, 1N461 THRU 1N464, 1N482 THRU 1N485, AND SUFFIX VERSIONS SILICON GENERAL PURPOSE DIODES B U L L E T IN N O . D L - S 71 1 1 5 0 8 , S E P T E M B E R 1971 VRM w kg • • • 25 to 185 Volts • Rugged Double-Plug Construction •

IC 7447 A

Abstract: 7447 spec sheet JAN1N486B JAN-TX1N486B JANTX1N486B
Contextual Info: Standard Recovery Rectifiers Part Number 1N662 JAN1N662 1N663 JAN1N663 MT5102 MT5103 MT5100 MT5101 MT5139 1N483 1N483A MT5140 1N485 1N3595-1 1N3595US 1N3595US-1 JAN1N3595-1 JAN1N3595US-1 JANS1N3595-1 JANTX1N3595-1 JANTX1N3595U JANTXV1N3595JANTXV1N3595 1N5194

Contextual Info: 1N485C Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current100m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage180 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition).10 @Temp. (øC) (Test Condition)

Contextual Info: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. Vrrm l£> Vf @ If IR @ VR Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200

1n485b

Contextual Info: DIODE 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B General Purpose Low Current FEATURES DESCRIPTION • • • • This Series is useful in low current rectify­ ing applications for military, industrial and commercial equipment. Metallurgical Bond

Contextual Info: MICROSEMI CORP/ UATERTOIilN 5GE ]> ninnF • =1347^3 DD1S3S1 E lfl ■ UNIT 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B l-r| v / L / t General Purpose Low Current FEATU RES • M e ta llu rg ica l Bond • Q u alified to MIL-S-19500/118 • P la n a r P assivated C h ip

1N485A

Contextual Info: 1N485A Silicon Rectifier 3.21 Diodes Silicon Rectifiers General-Purpose American Micr. Page 1 of 1 Enter Your Part # Home Part Number: 1N485A Online Store 1N485A Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

1n35

Contextual Info: Silicon D iodes DO-35 Case Low Leakage Diodes TYPE NO. •o VF @ IF IR V r Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200

IN483

Abstract: IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B
Contextual Info: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

CLARE MARKING

Abstract: 1N485BUR CDLL485B LL485B derating factor
Contextual Info: FEATURES 1N485BUR • • • • • • 1N485BUR SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL485B, CDLL485B MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS:

low leakage diode

Contextual Info: 1N485B General Purpose Low Leakage Diode. Working Inverse Voltage 180V. 1.94 Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N485B Online Store 1N485B Diodes General Purpose Low Leakage Diode. Working Inverse Voltage 180V. Transistors Integrated Circuits

IN485B

Abstract: IN486B IN485 IN483B 1N483B 1N485B 1N486B
Contextual Info: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N485

Abstract: 1N485A JANTX 1N485B derating 1N485B marking blue
Contextual Info: FEATURES 1N485B • • • • • • 1N485B AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS 1N485 & 1N485A MAXIMUM RATINGS AT 25 °C Operating Temperature:

Contextual Info: 1N485B 1N485B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg

Contextual Info: 1N4856B Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage100 @I(Z) (A) (Test Condition)2.5m Tolerance (%)5 P(D) Max. (W)1.2 Z(z) Max. (ê) Dyn. Imped.350 Temp Coef pp/10k10 Maximum Operating Temp (øC)175 Package StyleDO-29