1N539X Search Results

Contextual Info: 1N539xGP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A

IN5395

Abstract: code KE N5392 1N5391 1N5399
Contextual Info: s TAÏWAN SEMICONDUCTOR 1N5391 -1N5399 1.5 AMPS. Silicon Rectifiers P-Q-l-5 ¡à RoHS C O M P L IA N C E Features •> * ■> ■> High efficiency, Low VF High current capabilily High reliability H igh su rge cu rre nt capa bi lit/ Low pow er loss G reen com pound with suffix “G " on packing

A75 marking code

Contextual Info: 1N5391 - 1N5399 CREAT BY ART Pb 1.5 AMPS. Silicon Rectifiers DO-15 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode

Contextual Info: 1N5391G - 1N5399G 1.5AMPS Glass Passivated Rectifiers DO-15 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode

1N5391

Abstract: 1N5399
Contextual Info: TAIWAN 1N5391 -1N5399 m . SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers RoHS COMPLIANCE DO-15 .140 3.6 Features_ <• 1.0 (2 5 .4 ) TO M MIN. DIA. H High efficiency, Low VF High current capability High reliability High surge current capability

Contextual Info: 1N5391S - 1N5399S 1.5 AMPS Silicon Rectifiers DO-41 Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: 1N5391S thru 1N5399S Taiwan Semiconductor CREAT BY ART FEATURES Silicon Rectifiers - High efficiency, Low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

I251

Abstract: n5392 1N5391S 1N5399S
Contextual Info: E TAIWAN 1N5391S - 1N5399S SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers tò RoHS DO-41 COM PLIANCE 1 ,1 C 7 '2 . n .0 8 0 ¡2 .0 ; DW . -J E J - Features o •> ■> ❖ <r 1 .3 ÌZ5.-1I M IN. I-p. h .205 -fi.2} High efficiency. Law VF High current capability

Contextual Info: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode

Contextual Info: 1N5391G thru 1N5399G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and

1N5391S

Abstract: 1N5399S
Contextual Info: IM 1N5391S - 1N5399S TAIWAN SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers DO-41 RoHS COMPLIANCE Features .205 5.2 .166 (4.2) High current capability, Low VF. -0- High reliability & Current capability. High surge current capability. Low power loss, high efficiency.

diode 1n5397

Abstract: 1N5392
Contextual Info: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-15, Molded Plastic

Contextual Info: 1N5391 - 1N5399 Pb 1.5 AMPS. Silicon Rectifiers DO-15 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode

Contextual Info: 1N5391 thru 1N5399 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

Contextual Info: 1N5391G - 1N5399G Pb 1.5AMPS Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing

Contextual Info: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode

1N5399G

Contextual Info: 1N5391G - 1N5399G 1.5AMPS Glass Passivated Rectifiers DO-15 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode

diode IN 5397

Abstract: 1N 5392 DIODE diode in 5392 T3 marking 1N 4000 diode diode 1n5392 diode 1n5397 1N5392-T3 1N5392-TB 1N5399
Contextual Info: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-15, Molded Plastic

1N5391G

Abstract: 1N5399G
Contextual Info: is TAIWAN SEMICONDUCTOR 1N5391G - 1N5399G 1.5 AMPS. Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE J R . .1 40 3.6 / 104 (5.6) -Y- 444-Y- MIN DIA. Features H t i Glass passivated chip junction. High efficiency, Low VF High current capability High reliability

Contextual Info: 1N5391 – 1N5399 1.5A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data       