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    Microchip Technology Inc 1N5557

    TVS DIODE 49VWM 78.5VC DO13
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    Microchip Technology Inc 1N5557/TR

    TVS DIODE 49VWM 78.5VC DO13
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    Microchip Technology Inc JAN1N5557

    TVS DIODE 49VWM 78.5VC DO13
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    Microchip Technology Inc JANTX1N5557

    TVS DIODE 49VWM 78.5VC DO202AA
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    Microchip Technology Inc JANTXV1N5557

    TVS DIODE 49VWM 78.5VC DO13
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    1N5557 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N5557 Microsemi TVS - Diodes, Circuit Protection, TVS DIODE 49VWM 78.5VC DO13 Original PDF
    1N5557 Microsemi Transient Absorption Zener Scan PDF
    1N5557 Microsemi Data Book 1983 Scan PDF
    1N5557 Microsemi Transient Absorption Zener Scan PDF
    1N5557 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5557 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N5557 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N5557 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5557 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5557 New England Semiconductor 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES Scan PDF
    1N5557 Semitron Data Book 1991 Scan PDF
    1N5557/TR Microchip Technology TVS DIODE 49VWM 78.5VC DO13 Original PDF
    1N5557TR Microsemi 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR Original PDF

    1N5557 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DO-202AA

    Abstract: 1N5555 military part marking symbols jan Diode 1N5555 1N5556 1N5557 1N5558 IEC61000-4-4 JANTXV1N5555 1N6072A JANTX
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/500 DEVICES LEVELS 1N5555 1N5557


    Original     		PDF MIL-PRF-19500/500 1N5555 1N5557 1N5556 1N5558 1N5555 1N5558 T4-LDS-0094 DO-13 DO-202AA military part marking symbols jan Diode 1N5555 1N5556 1N5557 IEC61000-4-4 JANTXV1N5555 1N6072A JANTX

    Untitled

    Abstract: No abstract text available
    Text: 1N5557+JAN Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage54 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage49 I(PPM) Max.(A)Pk.Pulse Current19.0


    Original     		PDF 1N5557 Voltage54 Voltage49 Current19 Voltage78 StyleDO-13

    DO-202AA

    Abstract: 1N5555 JANTXV 1N5555 Lightning protection 1N5556 1N5557 1N5558 IEC61000-4-4 military part marking symbols jan 1N6036
    Text: 1N5555 1N5557 1N5556 1N5558 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N5555 thru 1N5558 are JEDEC registered selections for unidirectional devices. All have the


    Original     		PDF 1N5555 1N5557 1N5556 1N5558 1N5555 IEC61000-4-5. DO-202AA 1N5555 JANTXV Lightning protection 1N5556 1N5557 1N5558 IEC61000-4-4 military part marking symbols jan 1N6036

    Untitled

    Abstract: No abstract text available
    Text: 1N5557+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage54 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage49 I(PPM) Max.(A)Pk.Pulse Current19.0


    Original     		PDF 1N5557 Voltage54 Voltage49 Current19 Voltage78 StyleDO-13

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original     		PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    1N5907 JANTX

    Abstract: 1N5662A JANTXV 1n5638a 1N5555 1N5558 1N5629A 1N5665A 1N5907 1N5660A 1N5665A JAN
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 June 2009. INCH-POUND MIL-PRF-19500/500E 24 March 2009 SUPERSEDING MIL-PRF-19500/500D 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,


    Original     		PDF MIL-PRF-19500/500E MIL-PRF-19500/500D 1N5555 1N5558, 1N5907, 1N5629A 1N5665A, MIL-PRF-19500. 1N5907 JANTX 1N5662A JANTXV 1n5638a 1N5558 1N5665A 1N5907 1N5660A 1N5665A JAN

    1N5629a

    Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
    Text: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C


    Original     		PDF 1N5555 1N5558 1N5907 1N5629A 1N5665A 1N5629A 1N5630A 1N5645A series 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 October 1997 INCH-POUND MIL-PRF-19500/500C 8 July 1997 SUPERSEDING MIL-S-19500/500B 19 January 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR


    Original     		PDF MIL-PRF-19500/500C MIL-S-19500/500B 1N5555 1N5558, 1N5907, 1N5629A 1N5665A

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 February 2004. INCH-POUND MIL-PRF-19500/500D 5 November 2003 SUPERSEDING MIL-S-19500/500C 8 July 1997 PERFORMANCE SPECIFICATION * SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,


    Original     		PDF MIL-PRF-19500/500D MIL-S-19500/500C 1N5555 1N5558, 1N5907, 1N5629A 1N5665A,

    lN555

    Abstract: 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 1N5557 1N5558 1N5559
    Text: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5


    OCR Scan     		PDF 1N5550 1N5551 IN5552 1N5553 1N5554 1N5555 1N5556 1N5557' 1N5558 DO-13 lN555 1N5557 1N5559

    D0-202AA

    Abstract: No abstract text available
    Text: Microsemi Corp. f The d*xte experts SANTA ANA, CA SCOTTSDALE, AZ / For more information call: 682 941-6300 FEATURES 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION • PROTECTS CIRCUITS FROM HARMFUL TRANSIENTS • ABSORBS TRANSIENTS UP TO 1500 WATTS FOR IM S


    OCR Scan     		PDF 1N5555 1N5556 1N5557 1N5558 DO-13 MIL-S-19500/500 D0-202AA

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent


    OCR Scan     		PDF 1N5555 1N5556 1N5557 1N5558 1N5555 1N5558 DO-13

    Untitled

    Abstract: No abstract text available
    Text: Microsemi Corp. SANTA ANA, CA SCOTTSDALE, A l For m ore inform ation call: 602 941-6300 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION ZENER FEATURES • PROTECTS CIRCUITS FROM HARM FUL TRANSIENTS • ABSORBS TRANSIENTS UP TO I500 WATTS FOR IM S • CLAMPING RESPONSE TIM E OF I PICO SECOND


    OCR Scan     		PDF 1N5555 1N5556 1N5557 1N5558 MIL-S-19500/500

    in5556

    Abstract: DO13 package IN5555 silicon transient suppressor diodes transient suppressor 1N5555 1N5556 1N5557 1N5558 NE017
    Text: NEW ENGLAND SEMICONDUCTOR 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent


    OCR Scan     		PDF 1N5555 1N5558 DO-13 NE017 D00D2Ã in5556 DO13 package IN5555 silicon transient suppressor diodes transient suppressor 1N5556 1N5557 NE017

    Untitled

    Abstract: No abstract text available
    Text: 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent


    OCR Scan     		PDF 1N5555 1N5556 1N5557 1N5558 1N5558 13n---------- 1N5556 1N5557

    transient suppressor diodes

    Abstract: 1N5555
    Text: Back to Zener Diodes 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent


    OCR Scan     		PDF 1N5555 1N5556 1N5557 1N5558 1N5555 1N5556 1N5557 1N5558 transient suppressor diodes

    1N561 JAN

    Abstract: IN5552 IN5618 DIODE lN555 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556
    Text: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5


    OCR Scan     		PDF 1N5550 1N5551 IN5552 1N5553 1N5554 1N5555 1N5556 1N5557' 1N5558 DO-13 1N561 JAN IN5618 DIODE lN555

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    diode IN5552

    Abstract: SCR 25 amps PIV 600 lN555 microsemi 1n5620 1n5620 IN5618 DIODE 1N5550 1N5551 js 10 watt zener diode 1N5554
    Text: PIV lo 25°C Volts Amps VF IR Volts /iA 1.0 1.0 1.0 1.0 1.0 1.0 Type No. 1N 5550 1N 5551 1N 5552 1N 5553 1N 5554 Zener Type Ho. I N 5555 1N 5556 1N 5557 1N 5558 1N 5559 IN 5560 1N 5561 1N 5562 1N 5563 1N 5564 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0


    OCR Scan     		PDF 1N5550 1N5551 IN5552 1N5553 1N5554 1N5555 1N5556 1N5557' 1N5558 DO-13 diode IN5552 SCR 25 amps PIV 600 lN555 microsemi 1n5620 1n5620 IN5618 DIODE js 10 watt zener diode

    1N5557

    Abstract: 1N5555
    Text: • f a ^ ^ ^ FEATURES 1500 watts Peak Pulse Power dissipation MIL qualified per M IL -S -19500/434 Designed for DC applications Hermetically sealed package Each device 100% tested • • • • M A XIM U M R A TINGS 1500 W atts o f Peak Pulse P ow er d is ­


    OCR Scan     		PDF IL-S-19500/434. 1N5557 1N5555

    Untitled

    Abstract: No abstract text available
    Text: 1500 WATT TRANSIENT VOLTAGE SUPPRESSOR DIODES 5.50V to 171V DO 13 CASE DESCRIPTION . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage sensitive components.


    OCR Scan     		PDF 1N56S4 1N5664A 1N5665 1N5665A 1N5907 MIL-S-19500/500 1N6036 MIL-S-19500/434

    2n2082

    Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
    Text: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )


    OCR Scan     		PDF 2N3311 2N3312 2N3313 2N33ff 2N3314 2N3315 1N5555 1N5555 1N5556 1N5557 2n2082 2N2152 2N2075 2N2076 2N2153 2N2156 2N2079 2N2077 2N2078

    Untitled

    Abstract: No abstract text available
    Text: GEMI INSTR/ POl i l ER . M General Semiconductor Industries, Inc. FEATURES 1500 watts Peak Pulse Power dissipation MIL qualified per MIL-S-19500/434 Designed for DC applications Hermetically sealed package Each device 100% tested MAXIMUM RATINGS • 1500 watts of Peak Pulse Power dis­


    OCR Scan     		PDF MIL-S-19500/434 DO-13

    NEC 14324

    Abstract: No abstract text available
    Text: SEMICON COMPONENTS INC 5ÔE D • 0135157 00007TÌ i ■ T"-// — -2.5 SUPP1 M 'E Qfil DESCRIPTION FEATURES: . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage


    OCR Scan     		PDF 00007TÃ 12sec) 1N5662 1N5662A 1N5663 1N5663A 1N5664 1N5664A 1N5665 1N5665A NEC 14324