1N5660 Search Results

Contextual Info: Part: 1N5660 Series: OBSOLETE - 1N56 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current

1N5660A

Abstract: DO13
Contextual Info: Technical Data DIODE maximum ratings Voltage, Reverse VBR 130.0 V NO. 1N5660A Voltage, Reverse Peak (VRM) 179.0 V TYPE SUPPRESSOR Current at VR = OV (IO) empty A empty empty Current Average Rectified (IF) empty A empty empty 8.4 A CASE DO-13 200.0 A empty

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

1N5656A JANTX

Contextual Info: DIGITRON SEMICONDUCTORS 1N5629-1N5665 TRANSIENT ABSORPTION ZENER MAXIMUM RATINGS Operating and Storage Temperature -65 to +175°C DC Power Dissipation 1 watt @ TL ≤ 125°C, 3/8” from body Thermal Resistance 1500 watts for 10/1000 s with repetition rate of 0.01 @

IN5648

Abstract: 1N5631 IN5665A
Contextual Info: 1N5629 - 1N5665A series 1N5629 - 1N5665A IN56 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES • • • • • • • • Stand-off voltage range 6.8 - 200 Volts Glass Passivated Junction

1N5 diode

Abstract: N5661 1N56 LTA 702 N ZENER 1N5 232 IN5630
Contextual Info: « a. Microjsemi Corp. * The Onode experts SANTA ANA, CA 1N5629 thru _ _ _ SCOTTSDALE, AZ / • For more information call: _ N56o5 602 941-6300 FEATURES TRANSIENT ABSORPTION ZENER • P R O T E C T S CIRCUITS FRO M H A R M F U L T R A N S IE N T S • ABSORBS I M S T R A N S IEN T S U P TO 1500 W ATTS

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

1N5907 JANTX

Abstract: 1N5662A JANTXV 1n5638a 1N5555 1N5558 1N5629A 1N5665A 1N5907 1N5660A 1N5665A JAN
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 June 2009. INCH-POUND MIL-PRF-19500/500E 24 March 2009 SUPERSEDING MIL-PRF-19500/500D 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,

1N5631

Abstract: 1N5648A 1N5664A
Contextual Info: 1N5629 • 1N5665A SERIES IN56 Series 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) 31.8Min FEATURES ■ ■ ■ ■ ■ ■ ■ ■ Stand-off voltage range 6.8 - 200 Volts Glass Passivated Junction

Contextual Info: 1500 WATT TRANSIENT VOLTAGE SUPPRESSOR DIODES 5.50V to 171V DO 13 CASE DESCRIPTION . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage sensitive components.

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N5629A thru 1N5665A 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES AVAILABLE IN VOLTAGES FROM 5.8V THRU 171V The NES 1N5629A to 1N5665A series of Silicon Voltage Transient Suppressor diodes are designed to protect airborne and telephone electronic equipment from

Contextual Info: im ia s T o t. . TransZorb QUICK REFERENCE GUIDE PROVIDING PROTECTION FOR :• • Telecommunications &:7S$ ' • Military ÌH • Computer • Industrial ■\. '’ • . .Test & Vyt. I\\ Instrumentation • Medical • Automotive A General Industriès, Inc.

in5647a

Abstract: in5648 1N5660A thyristor t 558 f IN5665A 1N5645A series 1N5645 series 1N5655 1N5648 1N5645
Contextual Info: Tr a n s i e n t V o l t a g e S u p p r e s s i o n T V S D i o d e s 1N5629 – 1N5665A Series Invisible Protection MAXIMUM RATINGS When no problems exist, Crydom TVS • Peak pulse power (PPK): 1500 watts Diodes are totally invisible to the circuits

Contextual Info: 1N5629 - 1N5665A series 1N56 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES Min 31.8 ● Breakdown voltage range 6.8 - 200 volts ● Glass passivated junction Max 5.33 ● Excellent clamping capability

D 8049

Abstract: SMCJ110A 1N6066A JANTX1N5660A
Contextual Info: Transient Voltage Suppressors Part Number Package Outllne Type Data Mil Spac Sheet ID Ppp 15507 4370 7775 9532 11003 564 710 3784 6228 7710 9467 10938 4702 4705 8049 8052 9806 9B09 11277 11280 4703 4704 8050 8051 9807 9808 11278 11279 16138 11885 11886 11971

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 October 1997 INCH-POUND MIL-PRF-19500/500C 8 July 1997 SUPERSEDING MIL-S-19500/500B 19 January 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR

STR F 5653

Abstract: STR 5664 STR G 5653
Contextual Info: G EN L in str / ^ ^ power SLE General ^ Semiconductor • Industries, Inc. D 3ÔT Ü1 3 7 T-K -Z3 GGGH^GT 250 I RANSZORB T R A N S IE N T VO LTA G E SUPPRESSORS 1N5629 THRU 1N5665A FEATURES APPLICATION CONT'D > 1500 watts Peak Pulse Power dissipation i Available in ranges from 5.5 to 171

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 February 2004. INCH-POUND MIL-PRF-19500/500D 5 November 2003 SUPERSEDING MIL-S-19500/500C 8 July 1997 PERFORMANCE SPECIFICATION * SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,

in5647a

Abstract: IN5629 IN5665A IN5647 1N5662 1N5659 1N5631 1N5631A cs 308 1N5629-1N5665A
Contextual Info: 1N5629-1N5665A series IN 56 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (h e rm e tica lly se a le d p a c k a g e fo r harsh Industrial enviro n m e n ts) FEATURES • • • • Stand-off voltage range 6.8 - 200 Volts Glass Passivated Junction

1N566

Abstract: 1N5645A series 1N5633A JANTXV 1N5629 1N5629A 1N5665 1N5665A IEC61000-4-4 JANTXV1N5629A 1N5645A JANTX
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/500 DEVICES LEVELS * 1N5629 thru 1N5665

NEC 14324

Contextual Info: SEMICON COMPONENTS INC 5ÔE D • 0135157 00007TÌ i ■ T"-// — -2.5 SUPP1 M 'E Qfil DESCRIPTION FEATURES: . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage

Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + 1N5629 + Series 1N5865A C 3 Y 3 0 M Control overpower ri k 1T 31.8 min. ¡1{5 .33 max. -» 7.5 9.0 25.4 min. l _I Smisibla PnxtèectSon MAXIMUM RATINGS When no problems exist, Oydom TVS • Peak pulse power (Ppk): 1500 watts

Microsemi micronote series 701

Abstract: 1N5645A series 1N5629 1N5644A 1N5633A JANTX JANTXV1N5629A 1N5660A 19500/500 1n5634a jantx 1N5647A JAN
Contextual Info: 1N5629 thru 1N5665A 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This popular Transient Voltage Suppressor TVS series for 1N5629 thru 1N5665A are JEDEC registered selections for unidirectional devices. All have the same high Peak Pulse Power rating of 1500 W with extremely fast