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1n58xx Abstract: diode 5817 specifications diode IN 5817 1N MARKING 1N5817 1N5819 Contextual Info: 1N5817 THRU 1N5819 1.0AMP. Schottky Barrier Rectifier VOLTAGE:20 TO 40V CURRENT:1.0A AXIAL LEAD DO-41 Specification Features: Case: Epoxy, Molded DEVICE MARKING DIAGRAM Weight: 0.4Gram Approximately 1N58XX KEL High current capability, Low forward voltage drop	Original	1N5817 1N5819 DO-41 1N58XX 1N5817 DB-111 1n58xx diode 5817 specifications diode IN 5817 1N MARKING 1N5819	PDF
1n58xx Abstract: EC21QS03 1N5817 1N5818 1N914 ADP3050 ADP3050-5 ADP3050AR ADP3050AR-5 CD73 Contextual Info: a FEATURES Wide Input Voltage Range: 3.6 V to 30 V Adjustable and Fixed 3.3 V, 5 V Output Options Integrated 1 A Power Switch Uses Small Surface-Mount Components Cycle-By-Cycle Current Limiting Peak Input Voltage (100 ms): 60 V Thermally Enhanced 8-Lead SOIC Package	Original	ADP3050 200kHz C00125 1n58xx EC21QS03 1N5817 1N5818 1N914 ADP3050 ADP3050-5 ADP3050AR ADP3050AR-5 CD73	PDF
1N58XX Abstract: EC21QS03 ADP3050-3.3 1N5817 1N5818 1N914 ADP3050 ADP3050-5 ADP3050AR ADP3050AR-5 Contextual Info: a FEATURES Wide Input Voltage Range: 3.6 V to 30 V Adjustable and Fixed 3.3 V, 5 V Output Options Integrated 1 A Power Switch Uses Small Surface-Mount Components Cycle-By-Cycle Current Limiting Peak Input Voltage (100 ms): 60 V Thermally Enhanced 8-Lead SOIC Package	Original	ADP3050 200kHz C3451 1N58XX EC21QS03 ADP3050-3.3 1N5817 1N5818 1N914 ADP3050 ADP3050-5 ADP3050AR ADP3050AR-5	PDF
1n58xx Abstract: diode 5817 specifications 1N5817 1N5819 5819 5818 Contextual Info: 1N5817 THRU 1N5819 1.0AMP. Schottky Barrier Rectifier VOLTAGE:20 TO 40V CURRENT:1.0A AXIAL LEAD DO-41 Specification Features: Case: Epoxy, Molded Weight: 0.4Gram Approximately High current capability, Low forward voltage drop High surge current capability	Original	1N5817 1N5819 DO-41 1N58XX 1N5817 1N5819 1n58xx diode 5817 specifications 5819 5818	PDF
Contextual Info: Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device DO-41 Features -Metal-Semiconductor junction with guard ring. -Epitaxial construction. -Low forward voltage drop. 1.000 25.40 Min. 0.034(0.90)	Original	1N5817-G 1N5819-G DO-41 DO-41 1N5818T-G 1N5819T-G 1N5817A-G 1N5818A-G 1N5819A-G 1N5817B-G	PDF
1N58XX Contextual Info: 1N5820 THRU 1N5822 3.0 AMP. Schottky Barrier Rectifier FEATURES • • • • DO-15 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low power loss, high efficiency For use in low voltage high frequency inverters, free wheeling, and polarity protection applications	Original	1N5820 1N5822 DO-15 MIL-STD-750, 1N5821 300us 1N58XX	PDF