1N6068A JAN Search Results

DO13

Abstract: 1N6172US
Contextual Info: Transient Voltage Suppressors Part Number , 1N5662A CD6300A JAN1NS662A JANTX1N5662A JANTXV1N5662A 1N6172 1N6172US JAN1N6172 JAN1N6172US JANTX1N6172 JANTX1N6172US JANTXV1N6172 JANTXV1N6172US 1N6172A 1N6172AUS JAN1N6172A JAN1N6172AUS JANTX1N6172A JANTX1N6172AUS

Contextual Info: DIGITRON SEMICONDUCTORS 1N6036 – 1N6072A BIDIRECTIONAL TRANSIENT SUPPRESSOR DIODES MAXIMUM RATINGS POWER DISSIPATION 1500 Watts @ 25°C Less than 5 x 10-9 seconds tCLAMPING 0 VOLTS TO V(BR MIN) OPERATING TEMPERATURE -65°C to +175°C STEADY STATE POWER DISSIPATION

MIL-S-19500-507

Abstract: 1N6067 1N6038 1N6053A 1n6072a 1N6063A JANTX 1N6036 1n6040 1N6042 1N6066A
Contextual Info: ^ ^ « TransZo r b - General Semiconductor Industries, Inc. T R A N S I E N T VOLTAGE S U PP R ES SO R S 1N603G THRU 1N 6072A FEATURES • 1500 watts Peak Pulse Power dissipation • Available in ranges from 5.5 to 185 volts • MIL qualified per MIL-S-19500/507

1N6053A JANTX

Abstract: 1N6067A JANTX 1N6064A JANTX 1N6071A JANTX 1N6055A JANTX 1N6052A JANTXV 1N6047A JAN 1n6054a jan 1N6042A JANTXV 1N6068A JAN
Contextual Info: 1N6036 A thru 1N6072(A) Available on commercial versions 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/507 DESCRIPTION This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru 1N6072A are JEDEC

1N6071A JANTX

Contextual Info: 1N6036 A * thru 1N6072(A)* Available on commercial versions 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/507 DESCRIPTION This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru 1N6072A are JEDEC

15ca tvs

Abstract: G78A TVS 15CA 33cA 1N5656A JANTX 130CA 1n6157a jantx 1N5610 28ca 1n5639A equivalent
Contextual Info: H SM C Replacement Guide fo r Military TVS Diodes i . E n g in e e r e d s o lu t io n s f o r t h e t r a n s i e n t e n v i r o n m e n t MILITARY TVS CONVERSION 1500 W ATT DO-13 TVS TO HSMC SURFACE M OUNT JED E C P ART NUM BER WORKING V O LT A G E PROTEK

Contextual Info: 1500 WATT BI-POLAR TRANSIENT VOLTAGE 1N6036 THRU 1N6072 SUPPRESSOR DIODES DO-13 CASE FEATURES: 5.5 thru 185 Volts The 1N6036 Series of voltage transient suppressor di­ odes are designed to protect electronic equipment from failure due to voltage transients. Their avalanche charac-

IN6052A

Abstract: 1N6036 IN6055A in6064a 1N6058 1N6060 1N6061 1N6067A 1N6068 1N6068A
Contextual Info: 1N6036 thru Microsemi Corp. 1N6072A TRANSIENT Features • 1500 watts peak power dissipation • Available in standoff voltages from 5.5V to 185V • DO-13 hermetically sealed package • Bidirectional • UL recognized 1N6070A] ABSOREITION ZENER Description

Contextual Info: 1500 WATT BI-POLAR TRANSIENT VOLTAGE 1N6036 THRU 1N6072 SUPPRESSOR DIODES DO-13 CASE FEATURES: 5.5 thru 185 V olts 1500 Watts Peak Power The 1N6036 Series of voltage transient suppressor di­ odes are designed to protect electronic equipment from failure due to voltage transients. Their avalanche charac­

TYPE TO 092 Package pic

Abstract: MN6062
Contextual Info: Microísemi Corp. 1N 6036 thru 1 N 6 07 2A V T he <}<ode experts SANTA ANA, CA SCOTTSDALE, AZ F or m o r e in fo r m a tio n call: 6 0 2 941-6300 FEA TU RES • 1500 WATTS PEAK POWER DISSIPATION • AVAILABLE IN STANDOFF VOLTAGES FROM 5.5V TO 185V • 00-13 HERMETICALLY SEALED PACKAGE

Contextual Info: GENL IN S TR / 5bE POlilER General ^ ^ Semiconductor ^ • Industries, Inc. 30Tni37 T-J/-23 THRU MECHANICAL CHARACTERISTICS DESCRIPTION • Body marked w ith Logo «J* and type number ELECTRICAL CHARACTERISTICS Clamping Factor 1.33 at full rated power 1.20 at 50% rated power

1N6055A JANTX

Abstract: EFT 213 1N6036 1N6036A 1N6072 1N6072A IEC61000-4-4 JANTXV1N6036A DO-202AA Microsemi micronote series 701
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 DEVICES LEVELS * 1N6036 thru 1N6072

1N6072A JANTX

Abstract: 1N6072A 1N6047A JAN 1N6049 1N6067A 1N6053A JANTX Micronote 127 1n6071a EFT 213 1N5629
Contextual Info: 1N6036 and 1N6072A 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This popular Transient Voltage Suppressor TVS series for 1N6036 thru 1N6072A are JEDEC registered selections for bidirectional devices. All have the same high Peak Pulse Power rating of 1500 W with extremely fast

1N6055A JANTX

Abstract: 1N6041A 1N6047A JAN 1N6036A JANTXV JAN 1N6039 1N6036 1N6036A 1N6072 1N6072A IEC61000-4-4
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 1500 WATT BIDIRECTIONAL

1N6037A

Abstract: 1N6036A JESD22-A102 Diode LT 5230
Contextual Info: INCH-POUND MIL-PRF-19500/717 9 May 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 February 2012. INCH-POUND MIL-PRF-19500/507F 23 November 2011 SUPERSEDING MIL-PRF-19500/507E 7 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT

1N6059

Abstract: 1N6055A JANTX 1N6036A 1N6037A 1N6038A 1N6039A 1N6072A VQE 21 d 452a
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 November 2007. INCH-POUND MIL-PRF-19500/507E 7 August 2007 SUPERSEDING MIL-PRF-19500/507D 8 August 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT

mil-prf-19500/MIL-PRF-19500/478

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 December 1999. INCH-POUND MIL-PRF-19500/507C 12 September 1999 SUPERSEDING MIL-S-19500/507B 9 December 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT

Contextual Info: im ia s T o t. . TransZorb QUICK REFERENCE GUIDE PROVIDING PROTECTION FOR :• • Telecommunications &:7S$ ' • Military ÌH • Computer • Industrial ■\. '’ • . .Test & Vyt. I\\ Instrumentation • Medical • Automotive A General Industriès, Inc.