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    Eaton Bussmann FL11N60 (ALTERNATE: FL11N60)

    FUSE LK CPS N 060A NRB 23 | Bussmann by Eaton FL11N60
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FL11N60 (ALTERNATE: FL11N60) Bulk 6 Weeks 1
    • 1 $123.38
    • 10 $117.21
    • 100 $98.71
    • 1000 $98.71
    • 10000 $98.71
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    1N60AL Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF 1N60A 1N60A QW-R502-091

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF 1N60A 1N60A QW-R502-091

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF 1N60A 1N60A QW-R502-091

    1n60ag

    Abstract: 1N60A
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF 1N60A 1N60A QW-R502-091 1n60ag

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF 1N60A 1N60A QW-R502-091

    1N60AL

    Abstract: 1N60A UTC 1N60AL 1N60AL-T92-B
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF 1N60A 1N60A QW-R502-091 1N60AL UTC 1N60AL 1N60AL-T92-B

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF 1N60A 1N60A QW-R502-091

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF 1N60A 1N60A QW-R502-091.

    1N60AL

    Abstract: UTC 1N60AL 1N60A 600v 2A ultra fast recovery diode power mosfet 600v 1N60-A
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF 1N60A 1N60A QW-R502-091 1N60AL UTC 1N60AL 600v 2A ultra fast recovery diode power mosfet 600v 1N60-A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF 1N60A 1N60A QW-R502-091

    1n60ag

    Abstract: 1N60A 1n60al T92 DIODE XT92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF 1N60A 1N60A QW-R502-091 1n60ag 1n60al T92 DIODE XT92