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1N60L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
1N60L		UMW	TO-252 N-CHANNEL POWER MOSFET	Original	PDF	727.92KB	9

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UMW 1N60L TO-252 N-CHANNEL POWER MOSFET
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DigiKey ()	1N60L	Cut Tape	2,459		1	1 $1.04 10 $0.63 100 $0.40 1000 $0.27 10000 $0.27	Buy Now
	1N60L	Digi-Reel	2,459		1	1 $0.57 10 $0.51 100 $0.39 1000 $0.24 10000 $0.24	Buy Now
	1N60L	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
Samsung Semiconductor SL-B8T1N60LAWW LED MOD H INFLUX LNR STRP 4000K
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DigiKey	SL-B8T1N60LAWW	Tray	89		1	1 $12.07 10 $9.35 100 $9.35 1000 $7.06 10000 $6.84	Buy Now
Alpha & Omega Semiconductor AOI1N60L MOSFET N-CH 600V 1.3A TO251A
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DigiKey	AOI1N60L	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Alpha & Omega Semiconductor AOT11N60L MOSFET N-CH 600V 11A TO220
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Alpha & Omega Semiconductor AOB11N60L MOSFET N-CH 600V 11A TO263
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DigiKey ()	AOB11N60L	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	AOB11N60L	Digi-Reel			1	1 $1.22 10 $1.22 100 $1.22 1000 $1.22 10000 $1.22	Buy Now
	AOB11N60L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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1N60L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	O-220F2 OT-223 O-220 O-220F QW-R502-052	PDF
1n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	QW-R502-052 1n60	PDF
1N60 mosfet Abstract: 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)	Original	OT-223 O-220 QW-R502-052 1N60 mosfet 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	QW-R502-052	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	QW-R502-052	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	QW-R502-052	PDF
1n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	O-252 O-220 QW-R502-052 1n60	PDF
1N60 MOSfet Abstract: 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	O-220 QW-R502-052 1N60 MOSfet 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	1N60-KW 1N60-KW QW-R205-054	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	QW-R502-052	PDF
mosfet 1N60 Abstract: 1n60 1N60 TO92 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	QW-R502-052 mosfet 1N60 1n60 1N60 TO92	PDF
UTC1N60 Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	OT-223 O-220 O-220F O-251 O-252 QW-R502-052 UTC1N60 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2A 600V N-CHANNEL MOSFET 1 FEATURES TO- 251 * Typical RDS ON =9.3Ω@VGS = 10V. * Avalanche rugged technology * Low gate charge (typical 5.0nC) * Low Crss (typical 3.0 pF) * 100% avalanche tested * Excellent switching characteristics	Original	O-220 1N60L 1N60-TA3-T 1N60L-TA3-T 1N60-TM3-T 1N60L-TM3-T 1N60-TN3-R 1N60L-TN3-R 1N60-TN3-T 1N60L-TN3-T	PDF
1n60b Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	QW-R502-052 1n60b 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60	PDF