1N60 diode
Abstract: germanium point contact diode point contact diode 1N60 diode date sheet 1N60P diode 1n60 germanium diodes "Point Contact Diode" germanium diode germanium diode equivalent
Text: 1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Absolute Maximum Ratings Ta = 25oC
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1N60P,
1N60S
40MHz
1N60 diode
germanium point contact diode
point contact diode
1N60 diode date sheet
1N60P
diode 1n60
germanium diodes
"Point Contact Diode"
germanium diode
germanium diode equivalent
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1N60P
Abstract: ST60P 1N60S 20PF
Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to Max. 0.5 1.9 max 3.9 max 1N60P and 1N60S Black Cathode Band Black Part No. Black "ST" Brand 4.5± 1.0 R5 max Min. 27.5 Max. 1.9 10.0± 1.0 XXX Max. 3.9 ST 1.0 max Min. 27.5 Glass case DO-35-1
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ST60P,
ST60S
1N60P
1N60S
DO-35-1
DO-35
ST60P
ST60P
1N60S
20PF
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1N60P
Abstract: marking code ma
Text: 1N60PWS Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION • High reliability 1 Cathode • Low forward voltage and reverse current 2 Anode 1 2 MA APPLICATIONS • For electronic calculator, etc. • Low current rectification and high speed switching
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1N60PWS
OD-323
OD-323
1N60P
marking code ma
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Untitled
Abstract: No abstract text available
Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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1N60/1N60P
1N60P
1-Jan-2006
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1N60P
Abstract: No abstract text available
Text: 1N60PWS SCHOTTKY BARRIER DIODE Features • High reliability • Low forward voltage and reverse current PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Applications • For electronic calculator, etc. • Low current rectification and high speed switching MA
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1N60PWS
OD-323
125WS
OD-323
1N60P
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LL60P
Abstract: 1N60P 20PF
Text: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage
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LL60P
1N60P
LL60P
1N60P
20PF
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1n60
Abstract: 1N60P 1N60 Schottky
Text: MCC 1N60 1N60P omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • High Reliability Low Reverse Current and Low Forward Voltage Schottky Barrier Rectifier Maximum Ratings • DO-35
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1N60P
DO-35
1N60P
150mA
500mA
250K/W
200mA
1n60
1N60 Schottky
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1N60P
Abstract: diode sod-123 marking code FN
Text: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS
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1N60PW,
1N60SW
1N60PW:
1N60SW:
OD-123
OD-123
1N60P
diode sod-123 marking code FN
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1N60P
Abstract: 1N60 1N60 diode diode 1n60 1N60 Schottky Diode Equivalent 1N60 251n60
Text: MCC TM Micro Commercial Components 1N60 1N60P omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number
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1N60P
J-STD-020C
DO-35
1N60P
1N60
1N60 diode
diode 1n60
1N60 Schottky
Diode Equivalent 1N60
251n60
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1N60P
Abstract: 20pf
Text: ST 60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage dc
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1N60P
40MHz
1N60P
20pf
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1N60P
Abstract: 1N60 diode diode 1n60 DO-35 silicon Rectifier diodes germanium rectifier diode 1N60 1N60P,Germanium, DO-35
Text: 1N60, 1N60P GERMANIUM DIODES Features • Metal silicon junction, majority carrier conduction DO-35 GLASS · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics 0.075(1.9) MAX. DIA.
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1N60P
DO-35
1N60P
1N60 diode
diode 1n60
DO-35 silicon Rectifier diodes
germanium rectifier diode
1N60
1N60P,Germanium, DO-35
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1n60 diode
Abstract: diode 1n60 1N60 1N60 diode resistance 1N60P DIODE 1n60p 1N60P, DO-35
Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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1N60/1N60P
1N60P
200mA
1-Nov-2006
1n60 diode
diode 1n60
1N60
1N60 diode resistance
DIODE 1n60p
1N60P, DO-35
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1N60P
Abstract: 20PF
Text: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current
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1N60PW,
1N60SW
OD-123
1N60P
20PF
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ST60P
Abstract: 20pf 1N60P 1N60S
Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm
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ST60P,
ST60S
1N60P
1N60S
DO-35-1
40MHz
ST60P
ST60P
20pf
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 1N60 1N60P omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number
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1N60P
DO-35
1N60P
150mA
500mA
250K/W
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diode 1n60
Abstract: 1n60 diode 1N60P 1N60 Diode Equivalent 1N60 1N60 PACKAGE SMALL SIGNAL SCHOTTKY DIODES DO-35 TC1N60 DO35
Text: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage
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DO-35
1N60P
DB-100
diode 1n60
1n60 diode
1N60P
1N60
Diode Equivalent 1N60
1N60 PACKAGE
SMALL SIGNAL SCHOTTKY DIODES DO-35
TC1N60
DO35
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1N60 diode
Abstract: diode 1n60 1N60 1N60P 1N60P, DO-35
Text: 1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES DO-35 Metal-on-silicon junction, majority carrier conduction High current capability, Low forward voltage drop ● Extremely low reverse current Ir
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1N60P
DO-35
DO-35
1N60 diode
diode 1n60
1N60
1N60P
1N60P, DO-35
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Untitled
Abstract: No abstract text available
Text: 1N60P Small Signal Schottky Diodes VOLTAGE RANGE: 45 V CURRENT: 0.1 A Features fffff DO - 35 GLASS Metal s illicon junction m ajority carrier conduction High current capability,Low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics
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1N60P
DO--35
30MHz
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 1N60 1N60P omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number
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1N60P
DO-35
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 1N60 1N60P omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number
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1N60P
DO-35
1N60P
150mA
500mA
250K/and
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1N60P
Abstract: 20PF
Text: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current
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1N60PW,
1N60SW
OD-123
1N60P
20PF
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Untitled
Abstract: No abstract text available
Text: 1N60 THRU 1N60P SMALLE SIGNAL SCHOTTKY RECTIFIERS DO-35 Metal-on-silicon junction,majority camier conduction High currentcapability,low forward voltage drop • Ultra speed switching characteristics Extremely low reverse current IR Satisfactory wave detecion efficiency
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1N60P
DO-35
DO-35
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1N60 diode
Abstract: diode 1n60 1N60 Diode Equivalent 1N60 1N60 diode resistance 1N60P
Text: FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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1N60/1N60P
1N60P
200mA
1N60 diode
diode 1n60
1N60
Diode Equivalent 1N60
1N60 diode resistance
1N60P
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1N60P
Abstract: 20PF
Text: ST 60 P SILICON SCHOTTKY BARRIER DIODE Silicon Schottky Barrier Diode Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. max. 1.90 Cathode M ark m ax. 0.520 Glass case JEDEC DO-35 Dimensions in mm
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1N60P
DO-35
20PF
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