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    1N645 JAN Price and Stock

    Microchip Technology Inc jan1n645-1

    Rectifiers 225 V Signal or Computer Diode
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    Microchip Technology Inc JANTX1N645-1

    Rectifiers 225 V Signal or Computer Diode
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    Microchip Technology Inc JANTX1N645UR-1

    Rectifiers 225 V Signal or Computer Diode
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    Microchip Technology Inc JANTX1N645UR-1/TR

    Rectifiers 225 V Signal or Computer Diode
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    Microchip Technology Inc JAN1N645-1/TR

    Rectifiers 225 V Signal or Computer Diode
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    1N645 JAN Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N645+JAN Defense Electronics Supply Center 400mA Iout, 225V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N645JAN Unitrode International Semiconductor Data Book 1981 Scan PDF
    1N645+JANTX Defense Electronics Supply Center 400mA Iout, 225V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N645JANTX Unitrode International Semiconductor Data Book 1981 Scan PDF
    1N645+JANTXV Defense Electronics Supply Center 400mA Iout, 225V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N645JANTXV Unitrode International Semiconductor Data Book 1981 Scan PDF

    1N645 JAN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FEATURES 1N645- 1 • • • • • 1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:


    Original     		PDF 1N645- 1N645-1 MIL-PRF-19500/240 500mW 400mA, 150mA, MILPRF-19500/240 DO-35

    1N645-1

    Abstract: 1N645-1 JAN 1N645-1 JANTX
    Text: FEATURES 1N645-1 • • • • • 1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:


    Original     		PDF 1N645-1 1N645-1 MIL-PRF-19500/240 500mW 400mA, 150mA, MILPRF-19500/240 DO-35 1N645-1 JAN 1N645-1 JANTX

    DO-35 silicon Rectifier diodes

    Abstract: 1N649-1 1N647 1N648 1N649 DO-213AA 1N645 1N645-1 1N646 Purpose Rectifier Melf
    Text: Silicon Rectifier Diodes Use Advantages DO-35 Glass Package 1N645 to 649 or 1N645-1 to 649-1 Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not


    Original     		PDF DO-35 1N645 1N645-1 1N645-1 1N649-1 DO-35 silicon Rectifier diodes 1N649-1 1N647 1N648 1N649 DO-213AA 1N646 Purpose Rectifier Melf

    1N649

    Abstract: 1N645 1N645-1 1N646 1N647 1N648 1N649-1 DO-213AA
    Text: Silicon Rectifier Diodes Use Advantages DO-35 Glass Package 1N645 to 649 or 1N645-1 to 649-1 Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not


    Original     		PDF DO-35 1N645 1N645-1 1N645-1 1N649-1 1N649 1N646 1N647 1N648 1N649-1 DO-213AA

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N645-1N649 SILICON RECTFIER DIODES Available Non-RoHS standard or RoHS compliant (add PBF suffix) Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number MAXIMUM RATINGS


    Original     		PDF 1N645-1N649 MIL-PRF-19500, 1N645 1N646 1N647 1N648 1N649 DO-35A

    Untitled

    Abstract: No abstract text available
    Text: 1N645+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


    Original     		PDF 1N645 Current400m Voltage225 Current15u StyleDO-14

    Untitled

    Abstract: No abstract text available
    Text: 1N645-1+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25


    Original     		PDF 1N645-1 Current400m Voltage225 Current50n Current25u StyleDO-35

    Untitled

    Abstract: No abstract text available
    Text: 1N645+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


    Original     		PDF 1N645 Current400m Voltage225 Current15u StyleDO-14

    Untitled

    Abstract: No abstract text available
    Text: 1N645-1+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25


    Original     		PDF 1N645-1 Current400m Voltage225 Current50n Current25u StyleDO-35

    Untitled

    Abstract: No abstract text available
    Text: 1N645-1+JANS Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25


    Original     		PDF 1N645-1 Current400m Voltage225 Current50n Current25u StyleDO-35

    Untitled

    Abstract: No abstract text available
    Text: 1N645+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


    Original     		PDF 1N645 Current400m Voltage225 Current15u StyleDO-14

    IN645

    Abstract: 1N645-1 1N645-1 JAN
    Text: 1N645-1 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25°C 150 mA @ 150°C


    Original     		PDF 1N645-1 MIL-PRF-19500/240 400mA IN645-1 IN645 1N645-1 1N645-1 JAN

    Untitled

    Abstract: No abstract text available
    Text: 1N645-1+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25


    Original     		PDF 1N645-1 Current400m Voltage225 Current50n Current25u StyleDO-35

    IN645

    Abstract: 1N645-1 1N645-1 JAN JANTX 1N645-1
    Text: 1N645-1 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25°C 150 mA @ 150°C


    Original     		PDF 1N645-1 MIL-PRF-19500/240 400mA IN645-1 IN645 1N645-1 1N645-1 JAN JANTX 1N645-1

    1n647

    Abstract: 1N647-1
    Text: M IC R OS EN I CORP/ ÜIATERTOIÜN SÜE R F O T IF IF R Ç I .“ *" High Voltage, Low Current D m 00123S5 =1133 • U N I T 1N645, 1N647; JAN, JANTX 1N645, 1N647 JAN, JANTX & JANTXV 1N645-1, 1N647-1 . FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/240


    OCR Scan     		PDF 00123S5 1N645, 1N647; 1N647 1N645-1, 1N647-1 MIL-S-19500/240 DO-35 1N645-1 1n647 1N647-1

    1N645

    Abstract: 1N845 IN645 MIL-S-19500/240 1N645-1 1N645-1 JAN JANTX 1N645
    Text: RECTIFIERS JAN, JANTX 1N645 JAN, JANTX & JANTXV 1N645-1 High Voltage, Low Current FEATURES DESCRIPTION • • • • • These devices are useful in general purpose low current applications in high reliability and military equipment. Metallurgical Bond Qualified to MIL-S-19500/240


    OCR Scan     		PDF 1N645 1N645-1 MIL-S-19500/240 DO-35 1N845 IN645 MIL-S-19500/240 1N645-1 1N645-1 JAN JANTX 1N645

    DIODE 1N649

    Abstract: diode 1N645 JANTX markings on diode marking 332 1N649 JANTX 1N647 military part marking symbols jan 1N647-1 JANTX 1N647-1 1N645-1 JANS
    Text: MIL SPECS I C | 0 D D 0 1 2 S 0001574 4 | T-of-cy \ NOTICE I IOF VALIDATION ! INCH-POUND MIL-S-19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1


    OCR Scan     		PDF MIL-S-19500/240E 1N645, 1N647, 1N649, 1N645-1, 1N647-1 1N649-1, MIL-S-19500/240E, 1N647-1, DIODE 1N649 diode 1N645 JANTX markings on diode marking 332 1N649 JANTX 1N647 military part marking symbols jan JANTX 1N647-1 1N645-1 JANS

    1N649-1

    Abstract: No abstract text available
    Text: POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N645 THRU 1N649 JAN AND JANTX 1N645-1 THRU 1N649-1 MINIATURE GLASS PASSIVATED SILICON DIODES VOLTAGE- 225 to 600 Volts .023 0.6 010. .0 1 8 (.0 5 ) CURRENT - 400 Milliamperes T FEATURES 1.50(38.1) 1.00(25.4) ♦ Qualified to MIL-S-19500/ 240E


    OCR Scan     		PDF 1N645 1N649 1N645-1 1N649-1 MIL-S-19500/ MIL-STD-202, JANTX1N645 1N649 1N649-1

    1N649-1

    Abstract: 1N645-1 1N647-1 1N645-1 JAN N647
    Text: 1N645-1 thru 1N649-1 ITTIH ÎM Microsemi Corp. FEATURES • • • • • • • MILITARY RECTIFIERS Microm iniature package. Voidless herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. Standard recovery. PIV to 6 0 0 volts.


    OCR Scan     		PDF 1N645-1 1N649-1 MIL-S-19500/240D. 1N649-1 400mAdc 1N645-1 N647-1 150mAdc, 1N647-1 1N645-1 JAN N647

    1n645

    Abstract: 1n649 1N64 1N646
    Text: 1N645 THRU 1N649 MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 225 to 600 Volts Current- 400 Milliamperes FEATURES ♦ High temperature metallurgical^ bonded compression contacts as found in diode-con structed rectifiers ♦ 0.4 Ampere operation at Ta = 25’C with no ther^


    OCR Scan     		PDF 1N645 1N649 MIL-S-19500 1n649 1N64 1N646

    Untitled

    Abstract: No abstract text available
    Text: Silicon Rectifier Diodes E 1N645-1 thru 1N649-1 Use Advantages DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.


    OCR Scan     		PDF 1N645-1 1N649-1 DO-35 0Q0057L> 1N645-1 1N645-649

    JTX 1N649-1

    Abstract: DSAIH00025213 1n646
    Text: Silicon Rectifier Diodes Use Advantages n 1N645-1 thru 1N649-1 DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.


    OCR Scan     		PDF 1N645-1 1N649-1 DO-35 1N647-1 1N648 1N649-1 150mAdc, 1N645/47/49-1 -213AA JTX 1N649-1 DSAIH00025213 1n646

    M1 Z

    Abstract: DO204MB
    Text: 36E D GENL INSTR / POWER 3fi^D13? DDQ 4 MÔ 7 5 I 16IC • T ' O / - £> 7 1N645 THRU 1N649 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 225 to 600 Volts Current- 400 Milliamperes FEATURES ♦ High temperature metallurgical^ bonded constructed rectifiers


    OCR Scan     		PDF 1N645 1N649 -204MB MIL-S-19500 M1 Z DO204MB

    Untitled

    Abstract: No abstract text available
    Text: LL645-1 thru LL649-1 Silicon Rectifier Diodes Use Advantages E DO-213AA MELF SMD 1N645 1 647 / 649UR-1 MIL types Used as a small footprint surface mount general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not


    OCR Scan     		PDF LL645-1 LL649-1 DO-213AA 1N645 649UR-1 LL-34/35 DO-213AA) 150mAdc, 1N645/47/49UR-1