1N664 Search Results

HSL2-1808

Abstract: BAY6642
Contextual Info: BAY6642 HiRel Silicon Switching Diode Target datasheet • For high-speed switching applications  Covers 1N6639 – 1N6643 Type Marking BAY6642 - Pin Configuration 1 Anode 2 Cathode Package HSL2-1808 Maximum Ratings at TA=25°C; unless otherwise specified

1N6642UB

Contextual Info: Silicon Switching Diode Series 1N6642UB Features • JAN, JANTX, JANTXV and JANS qualification is available per MIL-PRF-19500/578. See part nomenclature for all available options. • Surface mount equivalent of popular JEDEC registered 1N6642 number. •

Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.

1N6642

Abstract: LE17 MIL-PRF19500 QR217 l2d diode
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642DLCC2 • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

1N6639

Abstract: 1N6638 melf diode D-5D 1N6641
Contextual Info: 1N6638/U 1N6639/U 1N6640/U 1N6641/U 1N6642/U 1N6643/U SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4081, REV. A SIGNAL OR COMPUTER DIODE 1N6638 THRU 1N6643 • Switching Diode • Hermetic, non-cavity glass package • Metallurgically bonded • Upscreen to JANTX, JANTXV per MIL-PRF-19500/578,609 available

SS664

Contextual Info: SS6638/U SS6639/U SS6640/U SS6641/U SS6642/U SS6643/U SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4973, REV. A SIGNAL OR COMPUTER DIODE 1N6638 THRU 1N6643 • Switching Diode • Hermetic, non-cavity glass package • Metallurgically bonded • Manufacture & screen to JANS per MIL-PRF-19500/578,609 using Sensitron specification, 7700-409X

DSAIH0002550

Contextual Info: Square ended SMD Fvv Silicon switching diodes 1N6638US 1N6642US 1N6643US Applications High Rel. Voidless MELF "D" General purpose fast diodes with rugged voidless hard glass tungsten design. Able to replace lower power types like 1N4148UR-1 and 1N4150UR-1.

Contextual Info: 1N664 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage8.2 @I(Z) (A) (Test Condition)10m Tolerance (%)5 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.7.0 Temp Coef pp/10k5.0 Maximum Operating Temp (øC)200þ Package StyleAxial-8

microsemi 1n6642

Abstract: 1N6638 JANTX 1N6638 1N6642 JANTXV 1N4148-1 JANS jantx diodes 1115-13
Contextual Info: 1N6638, 1N6642, 1N6643 Available on commercial versions Qualified Levels: JAN, JANTX, JANTXV and JANS VOIDLESS HERMETICALLY SEALED SWITCHING DIODES Qualified per MIL-PRF-19500/578 DESCRIPTION These popular JEDEC registered switching/signal diodes are military qualified and available

SEMELAB

Abstract: LE17 MIL-PRF19500 QR217 1n6640
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6640D2A / 1N6640D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”A-MELF” Package. Suitable for general purpose, switching applications.

1N6642 radiation

Abstract: 1n6642d2a LE17 MIL-PRF19500 QR217 melf diode D-5A
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.

melf diode D-5D

Abstract: 1N6638 1N6638U 1N6640 1N6640U 1N6642
Contextual Info: 1N6638/ U/ US 1N6640/ US 1N6642/ U/ US SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4081, REV. B SJ SX SV SIGNAL OR COMPUTER DIODE 1N6638, 1N6640, 1N6642 • Switching Diode • Hermetic, non-cavity glass package • Metallurgically bonded • Manufacture & screen to TX/TXV/JANS per MIL-PRF-19500/578,609 using Sensitron

1n4148 diod

Abstract: diod 1N4148 1N4148-1 JANS marking 1R dot 1N6642 JANTXV 1N914 diod 1N6642
Contextual Info: 1N6638, 1IU6642, 1N6643 ☆JANS* MicrosemiCorp. 7 T he diod e experts SANTA A N A , CA COMPUTER SWITCHING DIODES SCOTTSDALE, A I For m ore info rm ation call: 602 941-6300 Features • • • • • • • AVAILABLE IN AXIAL LEADED AND SURFACE MOUNT CONFIGURATIONS

Contextual Info: 1N6640+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current300m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.1

4081

Abstract: JANS1N6638US 1N6638US 1N 457 equivalent
Contextual Info: 1N6638/US thru 1N6642/US Standard SWITCHING / SIGNAL DIODES TECHNICAL DATA AVAILABLE AS DATA SHEET 4081, REV D JANS JAN EQUIVALENT* SJ66XX/US* SX66XX/US* SV66XX/US* SS66XX/US*

glass diode marking 2U

Abstract: 37sn 1N6640US 6643U 2U 73 diode marking 2U diode 1N6641
Contextual Info: H M mm Sania Ana, CA ic n o m s e m 1N6639 1N6640 1N6641 i FEATURES Available in axial leaded and surface mount configurations 300mAmp 75-100 Volts 4nsec Computer Switching Diode Ultra Fast Reverse Recovery Time Very low Capacitance Metallurgical^ Bonded Non-cavity glass package

IN6638U

Abstract: N6642US
Contextual Info: • 1N6638US,1 N6642US, 1N6643US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/578 • 1N6638U.1N6642U, 1N6643U AVAILABLE IN JAN, JANTX, JANTXV AND JANS 1N6638U & US 1N6642U & US 1N6643U & US PER MIL-PRF-19500/578 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE

IN6638

Abstract: IN664 IN6643 IN6642
Contextual Info: • 1N6638.1N6642,1N6643 AVAILABLE IN 1N6638 JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-1950Q/578 1N6642 • SWITCHING DIODES 1N6643 • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N6640US JANTXV

Abstract: in6639us
Contextual Info: •1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/609 >SWITCHING DIODES 1N6639US 1N6640US 1N6641US • NON-CAVITY GLASS PACKAGE ■METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N6641

Contextual Info: 1N 6639 • 1N6639 thru 1N6641 AVAILABLE IN JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-19500/609 1 N 6640 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE 1N6641 • METALLURGY ALLY BONDED MAXIMUM RATINGS 0.056/0.075 & 1.42/1.« Operating Temperature: -65“C to +175°C

1N6638US

Abstract: 1N6642US 1N6642US equivalent microsemi 1n6642 1N6642US microsemi
Contextual Info: 1N6638US, 1N6642US, 1N6643US Available on commercial versions Qualified Levels: JAN, JANTX, JANTXV and JANS VOIDLESS HERMETICALLY SEALED SWITCHING DIODES Qualified per MIL-PRF-19500/578 DESCRIPTION This popular surface mount equivalent JEDEC registered switching/signal diodes are military

1N6640U01D

Abstract: 1N6640U02D escc 1N6640U 40UD1
Contextual Info: 1N6640U Aerospace 0.3 A - 75 V switching diode Features K A • Surface mount hermetic package ■ High thermal conductivity materials ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop

IN6642 diode datasheet

Abstract: 1N6642 JANTX IN6643 IN6642 IN6638 1N6642 JANTXV 1N6638 1N6642 1N6643
Contextual Info: 1N6638 1N6642 1N6643 • 1N6638,1N6642, 1N6643 AVAILABLE IN JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-19500/578 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED 0.056/0.075 1.42/1.91 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C

Contextual Info: 1N6642U Aerospace 0.3 A - 100 V switching diode Datasheet - production data Description This power ultrafast recovery rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2D