1N8024 Search Results
1N8024 Price and Stock
GeneSic Semiconductor Inc 1N8024-GADIODE SIL CARB 1200V 750MA TO257 |
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1N8024-GA | Tube | 10 |
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1N8024-GA | 10 |
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1N8024-GA | 8 |
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1N8024-GA | 10 |
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Navitas Semiconductor 1N8024-GA |
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1N8024-GA |
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1N8024 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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1N8024-GA |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 0.75A TO257 | Original | 5 |
1N8024 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package • RoHS Compliant 1200 V Schottky rectifier 250°C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge |
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1N8024-GA Mil-PRF-19500 1N8024 88E-18 90E-11 00E-10 00E-03 | |
1N8024-GA SPICEContextual Info: 1N8024-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8024-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 |
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1N8024-GA 1N8024-GA. 05-SEP-2013 1N8024-GA 1N8024 TEMP-24) 88E-18 1N8024-GA SPICE | |
Contextual Info: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package • RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge |
Original |
1N8024-GA Mil-PRF-19500 TEMP-24) 1N8024 88E-18 90E-11 00E-10 00E-03 | |
Contextual Info: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package • RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge |
Original |
1N8024-GA Mil-PRF-19500 TEMP-24) 1N8024 88E-18 90E-11 00E-10 00E-03 |