1N914 DIODE Search Results

Contextual Info: 1N914 Vishay Telefunken Fast Switching Diode Features D D D D Fast switching speed High reliability High conductance For general purpose switching applications 94 9367 Order Instruction Type 1N914 Type Differentiation VRRM = 75 V Ordering Code 1N914–TAP

Contextual Info: 1N914 Vishay Telefunken Fast Switching Diode Features D D D D Fast switching speed High reliability High conductance For general purpose switching applications 94 9367 Order Instruction Type 1N914 Type Differentiation VRRM = 75 V Ordering Code 1N914–TAP

1n914 equivalent

Abstract: d1914 IN414B test diode in4148 DIODE BP M 3101 1N914 1N914-B 1N914-HV 1N914-N
Contextual Info: This DIODES COMPLEMENTARY SWITCHING DIODES 1N914-R* 60 Its 1N914-RN 60 1N914-HV 200 1N914-B 75 0.025 @ 20V 0.001 @ 20V 0.025 @ 20V 0.001 @ 20V 0.001 @ 20V 0.25 @ 20V 1.0 @ 75V 5.0 @ 60V V BR Volts Min @IR = 10/iA Cr pf Max. @ ov trr Max. in N-Sec @ lF=10mA; recover

1N914

Abstract: 1N914 vishay DO35
Contextual Info: 1N914 Vishay Semiconductors Fast Switching Diode Features D D D D Fast switching speed High reliability High conductance For general purpose switching applications 94 9367 Order Instruction Type 1N914 Type Differentiation VRRM = 75 V Ordering Code 1N914–TAP

1N914F

Abstract: 1N916 1N914 transistor data sheet free download diode 1n914 1N914 data sheet MAM246 1N914
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N916 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 10 Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES

1N914

Abstract: 1N914A 1N914B MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N914A; 1N914B High-speed diodes Product specification Supersedes data of 1999 May 26 2003 Jun 06 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B FEATURES DESCRIPTION • Hermetically sealed leaded glass

1N914

Abstract: MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass

1N916

Abstract: 1N914 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N916 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES

1N914F

Abstract: 1N916 1N914 MAM246 diode 1N916
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N916 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES

1N916

Abstract: 1N914 diode 1N914
Contextual Info: Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The 1N914; 1N916 are high-speed switching diodes fabricated in planar tecshnology, and encapsulated in hermetically sealed leaded glass SOD27

diode cross reference 1n914

Abstract: 1n914 str 50113 sa marking axial diode philips 1n914a marking diode axial
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass

SC4075

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass

1N914

Contextual Info: FEATURES 1N914 • • • • • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS:

D035 package

Abstract: diode D035 D0-35 1N914
Contextual Info: 250 mW EPITAXIAL PLANAR DIODES Data Sheet Mechanical Dimensions 1N914 Description JEDEC D0-35 .120 .200 .060 .090 Features 1.00 Min. .018 .022 n PLANAR PROCESS n INDUSTRY STANDARD D0-35 PACKAGE n 250 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 1N914

Contextual Info: 1N914 Qualified Levels: JAN, JANTX, and JANTXV Glass Axial Switching Diode Available on commercial version Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N914 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. This small low capacitance

melf smd 1n914

Abstract: 1N914 smd 1N9141 1N914-1 1N914
Contextual Info: 1N914 or 1N914-1 Silicon Switching Diode Applications DO-35 Glass Package Used in general purpose applications, where performance and switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded BKC's Sigma Bond plating

1N9141

Contextual Info: Silicon Switching Diode Applications 1N914 or 1N914-1 DO-35 Glass Package Used in general purpose applications, where performance and switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded BKC's Sigma Bond plating

IN914

Contextual Info: • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV 1N914 PER MIL-PRF-19500/116 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C

MIL-PRF-19500/116

Abstract: 1N914 D0-35 IN914
Contextual Info: • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 1N914 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.068/0.076 1.73/1.93 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C

1n914 equivalent

Contextual Info: 1N914 Qualified Levels: JAN, JANTX, and JANTXV Glass Axial Switching Diode Available on commercial version Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N914 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. This small low capacitance

1N917

Abstract: 1n915 1n916b
Contextual Info: TYPES 1N914, 1N914A, 1N9MB, 1N915, 1N916. 1N916A, 1N916B. 1N917 SILICON SWITCHING DIODES B U L L E T IN N O . O L -S 7 3 1 1 9 5 4 , M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents mechanical data 1N914 . . . 1N4148 . . . 1N4531

Contextual Info: 1N914 AVAILABLE IN JAN, JAN TX, AND JA N T X V 1N914 PER M1L-PRF-195D0/11G SWITCHING DIODE HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C Operating Current: 75 mA @ T ^ = + 25°C

Contextual Info: P h ilip s S e m ico n d u cto rs P ro d u ct s p e cifica tio n High-speed diodes 1N914; 1N916 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package • High switching speed: max. 4 ns The 1N914; 1N916 are high-speed switching diodes fabricated in planar

Contextual Info: 1N914, 1N914A, 1N914B Silicon Rectifier Diode Ultra Fast Switch Absolute Maximum Ratings: TA = +25C, Note 1 unless otherwise specified Maximum Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V