1N914 ONSEMI Search Results

2N3904 transistor equivalent

Abstract: MJE250 Iron Core Inductor
Contextual Info: SECTION 9 APPENDICES APPENDIX I USING THE TWO TRANSISTOR ANALYSIS Equation 3 relates IA to IG, and note that as α1 + α2 = 1, IA goes to infinity. IA can be put in terms of IK and α’s as follows: DEFINITIONS: 5 Collector current 5 Base current 5 Collector leakage current

Transformer and Inductor Design Handbook,

Abstract: hall ic 01e 3C80 ferrite 3C80 transformer MC33262 3c80 material mbrs360 MC33072 flyback transformer high voltage copier 4n35 optocoupler
Contextual Info: AND8024/D Off-Line Critical Conduction Switching Power Supply with Voltage and Current Limiting http://onsemi.com Prepared by: Larry Hayes, Jim Spangler ON Semiconductor Phoenix, AZ 85008 APPLICATION NOTE current through the primary of the coupled inductor

1N914 SOT-23

Abstract: MMBT550LT1
Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol 5550 5551 Unit Collector −Emitter Voltage Rating VCEO 140 160

Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. http://onsemi.com

Contextual Info: MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO 40 Vdc VCB 75 Vdc VEB 5.0 Vdc 500 mAdc Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous

marking 1p

Contextual Info: MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. http://onsemi.com

2n5551

Abstract: 2N55551 2N5551 circuit 2n5550
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit

1n914 SOT323

Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which7 is designed for low power surface mount applications. http://onsemi.com

GD103

Abstract: 4752F 1N914 diode free max5776 power transformer PAYTON 125 mosfet 9452
Contextual Info: NCP1560 Advance Information Full Featured Voltage Mode PWM Controller The NCP1560 PWM controller contains all of the features and flexibility needed to implement voltage–mode control for modern high performance power converters. This device cost effectively

MARKING 318 SC70-6

Contextual Info: MBT2222ADW1T1 General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc

Contextual Info: MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. http://onsemi.com

TRIAC MAC8N

Contextual Info: MAC8D, MAC8M, MAC8N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • •

MMBT2222ALT1

Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector–Base Voltage MMBT2222LT1 MMBT2222ALT1

mps 222A

Abstract: mps2222 equivalent mps2222a mps2222 222A MPS2 Transistors MPS2222A MPS2
Contextual Info: MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage VCEO MPS2222 MPS2222A Collector −Base Voltage Value 30 40 MPS2222 MPS2222A 1

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23
Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160

4DHM

Abstract: Q1 Q2 Q3 Q4 DPAK AC4DHM
Contextual Info: MAC4DHM Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. http://onsemi.com Features

4dlm

Abstract: ac 4dlm
Contextual Info: MAC4DLM Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. http://onsemi.com Features

2N5401

Abstract: 2N54XX transistor 2N5401 1N914 2N5400 2N5401RL1 2N5401RLRA 2N5401RLRAG 2N5401RLRM 2N5401ZL1
Contextual Info: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage

Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160

843 SOT-23

Abstract: MMBT2222ALT1G
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating

MMBT5401LT1G

Abstract: 1N914 MMBT5401LT1 MMBT5401LT3 MMBT5401LT3G sot-23-3 marking code PO
Contextual Info: MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc

MMBT5401LT1G

Abstract: 1N914 MMBT5401LT3G
Contextual Info: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage

2N540

Abstract: 2N5401G 1N914 2N5401 2N5401RLRAG 2n5401-g
Contextual Info: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 150 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage

1N914

Abstract: MMBT5401LT1G MMBT5401LT3G
Contextual Info: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage