1N914 SOT 23 Search Results

1N457 equivalent

Abstract: 1n916 equivalent 1n914 sot 23 1n914 equivalent 1N3070 equivalent 1N916 1N3064 FDH444 1N3070 fdh300
Contextual Info: Surface Mount Diodes General Purpose & Specialty Surface Mount Diodes continued The National "MMBD" Series provides the SOT-23 electrical equivalent of the standard devices listed. Each family is available in 5 configurations. MMBD 1200 FAMILY 1N914 1N914A

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS

semtech 1N4148 SMD

Abstract: 1n4148 micromelf melf smd 1n914 1N4148 SMD PACKAGE micromelf 1n914 micromelf 1N4148 SOT-23 1N914 smd microMELF dimensions 1N4148
Contextual Info: MCL914, MCL914A, MCL914B SILICON EPITAXIAL PLANAR DIODES LS-31 Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the device 1N4148 • Micro Melf package Applications • Extreme fast switches

semtech 1N4148 SMD

Abstract: 1n4148 micromelf 1N4148 SOT-23 1N914 smd 1N4148 SMD PACKAGE micromelf 1N4148 1N914 1N914A 1N914B
Contextual Info: MCL914, MCL914A, MCL914B SILICON EPITAXIAL PLANAR DIODES LS-31 Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the device 1N4148 • Micro Melf package Applications • Extreme fast switches

1n4148 micromelf

Abstract: melf smd 1n914 1N4148 SMD PACKAGE semtech 1N4148 SMD micromelf 1N4148 SOT-23 1N914 smd 1N914 SOT-23 1N4148 1N914
Contextual Info: MCL914, MCL914A, MCL914B SILICON EPITAXIAL PLANAR DIODES LS-31 Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the device 1N4148 • Micro Melf package Applications • Extreme fast switches

1N914 SOT-23

Abstract: MMBT550LT1
Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol 5550 5551 Unit Collector −Emitter Voltage Rating VCEO 140 160

MMBT5401LT

Abstract: 1N914 SOT-23
Contextual Info: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage

Contextual Info: High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO

843 SOT-23

Abstract: MMBT2222ALT1G
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating

Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23
Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160

Contextual Info: High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO

m1924

Abstract: 1N914 MMBT5401LT1 M1934
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage

MMBT2222ALT1

Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector–Base Voltage MMBT2222LT1 MMBT2222ALT1

1n4148-phi

Abstract: 1n4148ph AAP153 BA479 BA482 BAS32 1N4148 minimelf 1N4148 1N4151 BAS216
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 nepeKnronaro^Me Kofl: m yHMBepcanbHbie BA479 BA482 1N4151 1N4148 1N4148-PHI 1N4448 1N914 V r » [B] 30 35 50 75 75 100 100 [A]“ 0,05 0,1 0,2 0,2 0,2 0,15 0,075 V f npw [B]

317MB

Abstract: 317mt transistor LM 317MT 317MBT 317MABT 317AB 317mt internal diagram LM317M LM317MBDTRK LM317MB
Contextual Info: LM317M 500 mA Adjustable Output, Positive Voltage Regulator The LM317M is an adjustable three−terminal positive voltage regulator capable of supplying in excess of 500 mA over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally

sot-23 Marking M1F

Abstract: MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3
Contextual Info: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBT5550 MMBT5551 Collector −Base Voltage

MMBT5401LT1G

Abstract: 1N914 MMBT5401LT1 MMBT5401LT3 MMBT5401LT3G sot-23-3 marking code PO
Contextual Info: MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor LMBT5401LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 SOT– 23 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO V EBO – 150 – 160

M1B marking

Abstract: transistor 2222a data sheet LMBT2222ALT1G 1N914 LMBT2222ALT1 LMBT2222LT1 LMBT2222LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
Contextual Info: ON Semiconductort MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage

IC 723 pin out diagram

Abstract: transistor package SOT-723 1N914 MMBT5551M3T5G
Contextual Info: MMBT5551M3T5G NPN High Voltage Transistor The MMBT5551M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose high voltage applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
Contextual Info: MOTOROLA Order this document by MMBT5550LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage