MMBT5550LT1 Search Results
MMBT5550LT1 Price and Stock
onsemi MMBT5550LT1GTRANS NPN 140V 0.6A SOT23-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT5550LT1G | Cut Tape | 37,545 | 1 |
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MMBT5550LT1G | Ammo Pack | 21 Weeks, 4 Days | 1 |
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MMBT5550LT1G | 46,569 |
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MMBT5550LT1G | 102,000 | 9,837 |
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MMBT5550LT1G | 57,000 | 10 Weeks | 3,000 |
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MMBT5550LT1G | Reel | 6,000 | 3,000 |
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MMBT5550LT1G | 60,000 |
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MMBT5550LT1G | 21,338 |
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MMBT5550LT1G | 17,070 |
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MMBT5550LT1G | 213,000 | 1 |
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MMBT5550LT1G | 2,150 | 1 |
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MMBT5550LT1G | 6,504 |
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MMBT5550LT1G | 10 Weeks | 60,000 |
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MMBT5550LT1G | 15,000 | 11 Weeks | 3,000 |
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MMBT5550LT1G | 21,823 |
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MMBT5550LT1G | 1,347 |
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MMBT5550LT1G | 87,000 | 12 Weeks | 3,000 |
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MMBT5550LT1G | 120,000 |
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MMBT5550LT1G | 60,000 |
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MMBT5550LT1G | 37,000 | 1 |
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MMBT5550LT1G | 141,895 |
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MMBT5550LT1G | 572,165 |
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Rochester Electronics LLC MMBT5550LT1TRANS NPN 140V 0.6A SOT23 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT5550LT1 | Bulk | 34,060 | 9,458 |
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onsemi NSVMMBT5550LT1GTRANS NPN 140V 0.6A SOT23-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NSVMMBT5550LT1G | Digi-Reel | 2,538 | 1 |
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NSVMMBT5550LT1G | Reel | 0 Weeks, 2 Days | 12,500 |
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NSVMMBT5550LT1G | 32,871 |
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NSVMMBT5550LT1G | Bulk | 6,000 |
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NSVMMBT5550LT1G | 27,000 | 1 |
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NSVMMBT5550LT1G | 11 Weeks | 3,000 |
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NSVMMBT5550LT1G | 12 Weeks | 3,000 |
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NSVMMBT5550LT1G | 27,520 |
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NSVMMBT5550LT1G | 24,912 |
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onsemi MMBT5550LT1TRANS NPN 140V 0.6A SOT23 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT5550LT1 | Cut Tape |
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MMBT5550LT1 | Reel | 111 Weeks | 3,000 |
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MMBT5550LT1 | 8,778 |
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MMBT5550LT1 | 2,184 |
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MMBT5550LT1 | 34,060 | 1 |
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MMBT5550LT1 | 5,490 |
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onsemi MMBT5550LT3GBipolar Transistors - BJT SS HV XSTR NPN 160V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT5550LT3G | 90,474 |
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MMBT5550LT1 Datasheets (10)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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MMBT5550LT1 | Leshan Radio Company | High Voltage Transistors(NPN Silicon) | Original | 163.2KB | 4 | |||
MMBT5550LT1 |
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Silicon NPN Transistor | Original | 203.53KB | 6 | |||
MMBT5550LT1 |
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High Voltage Transistor | Original | 101.01KB | 8 | |||
MMBT5550LT1 |
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Small Signal High Voltage | Original | 99.78KB | 6 | |||
MMBT5550LT1 |
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Small Signal High Voltage Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 | Original | 155.8KB | 5 | |||
MMBT5550LT1 |
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High Voltage Transistor NPN | Original | 102.73KB | 8 | |||
MMBT5550LT1/D |
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Motorola Preferred Device | Original | 203.52KB | 6 | |||
MMBT5550LT1-D |
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High Voltage Transistors NPN Silicon | Original | 101.03KB | 8 | |||
MMBT5550LT1G |
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Original | 99.77KB | 6 | ||||
MMBT5550LT1G |
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Small Signal High Voltage Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 | Original | 155.8KB | 5 |
MMBT5550LT1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1N914
Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
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Original |
MMBT5550LT1 MMBT5551LT1 236AB) 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 | |
Contextual Info: High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc 3 |
Original |
MMBT5550LT1 MMBT5551LT1 236AB) | |
1N914
Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
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Original |
MMBT5550LT1 MMBT5551LT1 MMBT5551LT1 r14525 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 | |
Contextual Info: RECTRON SEMICONDUCTOR MMBT5550LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation 0.225 W(Tamb=25OC) PCM: * Collector current 0.6 A ICM: * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junction temperature range |
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MMBT5550LT1 OT-23 150OC OT-23 MIL-STD-202E | |
Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160 |
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MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D | |
MMBT5551LT1G
Abstract: sot-23 Marking M1F 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G
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MMBT5550LT1G, MMBT5551LT1G MMBT5550 MMBT5551 MMBT5550LT1/D MMBT5551LT1G sot-23 Marking M1F 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G | |
1N914 SOT-23
Abstract: MMBT550LT1
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MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 OT-23-3 1N914 SOT-23 MMBT550LT1 | |
1N914
Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
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MMBT5550LT1 MMBT5551LT1* r14525 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 | |
MMBT5551LT1
Abstract: motorola S MMBT5551 G1 MMBT5550
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OCR Scan |
MMBT5550LT1 MMBT5551LT1* --236AB) MMBT5551LT1 MMBT5551LT1 motorola S MMBT5551 G1 MMBT5550 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5550LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.6 A ICM: Collector-base voltage |
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OT-23 OT-23 MMBT5550LT1 MMBT5550LT1 100MHz | |
Contextual Info: SynSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT5550LT1 TRANSISTOR NPN FEATURES Power dissipation Pcm : 0225 W (Tamb=25 °C) Collector current ICM: 0.6 A Collector base voltage 160 V Operating and storage junction temperature range |
OCR Scan |
MMBT5550LT1 OT-23 | |
sot-23 Marking M1F
Abstract: MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3
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MMBT5550LT1, MMBT5551LT1 MMBT5550 MMBT5551 MMBT5550LT1/D sot-23 Marking M1F MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3 | |
MBT5551LT1
Abstract: MBT5551L T0236AB
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OCR Scan |
MMBT5550LT1 MMBT5551LT1* T0-236AB) 225rola MBT5550LT1 MBT5551LT1 1N914 MBT5551LT1 MBT5551L T0236AB | |
Contextual Info: MAXIMUM RATINGS Symbol Value Unit C o llector-E m itter Voltage Rating v CEO 140 Vdc Collector-Base Voltage v CBO 160 Vdc Em itter-Base Voltage Vebo 6.0 Vdc ic 600 m Adc C ollector C urrent — Continuous MMBT5550LT1 MMBT5551LT1* CASE 318-07, STYLE 6 SOT-23 TO-236AB |
OCR Scan |
MMBT5550LT1 MMBT5551LT1* OT-23 O-236AB) MBT5550 MMBT5551 MMBT5550 | |
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1N914
Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23
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MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1G MMBT5551LT3 5551 SOT-23 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT5550LT1 1. BASE TRANSISTOR( NPN ) 2. EMITTER 3. COLLECTOR FEATURES 1.0 Power dissipation PCM : 0.225 W(Tamb=25℃) Collector current ICM: 0.6 |
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OT-23 MMBT5550LT1 037TPY 950TPY 550REF 022REF | |
1n914 SOD123
Abstract: sot-23 MARKING CODE G1 Sc59
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Original |
MMBT5550LT1 MMBT5551LT1* 236AB) 22NOT 1n914 SOD123 sot-23 MARKING CODE G1 Sc59 | |
1N914
Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
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Original |
MMBT5550LT1/D MMBT5550LT1 MMBT5551LT1* 236AB) MMBT5550LT1/D* 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 | |
MMBT5551LT1G
Abstract: 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G MMBT5550LT1 4rc10
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MMBT5550LT1G, MMBT5551LT1G MMBT5550 MMBT5551 MMBT5550LT1/D MMBT5551LT1G 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G MMBT5550LT1 4rc10 | |
2n6517 sotContextual Info: Bipolar Transistors High Voltage Transistors > 100 V NPN − MPSW42 − BF393 2N5551 − 2N6517 MPSA42 − BF422 2N5550 2N6515 MMBT6517LT1 − MMBTA42LT1 − MMBTA43LT1 MMBT5551LT1 − MMBT5550LT1 PZTA96ST1 BSP19AT1 PZTA42T1 − BF720T1 MSD42WT1 V(BR)CEO |
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MPSW42 BF393 2N5551 2N6517 MPSA42 BF422 2N5550 2N6515 MMBT6517LT1 MMBTA42LT1 2n6517 sot | |
Contextual Info: ON Semiconductort MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage |
Original |
MMBT5550LT1 MMBT5551LT1 MMBT5551LT1 | |
1N914 SOT-23
Abstract: ic 5550 adc . Circuit Diagram using this IC sot-23 Marking M1F MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G
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Original |
MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 SOT-23 ic 5550 adc . Circuit Diagram using this IC sot-23 Marking M1F MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G | |
Contextual Info: High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc Collector Current — Continuous |
Original |
MMBT5550LT1 MMBT5551LT1 236AB) | |
sot-23 Marking M1F
Abstract: SMMBT5551 SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l
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Original |
MMBT5550L, MMBT5551L, SMMBT5551L AEC-Q101 MMBT5550 MMBT5551, SMMBT5551 sot-23 Marking M1F SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l |