1RF740 Search Results

Contextual Info: PD-9.1068 In te rn atio n al Rectifier_ 1RF740LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Cos& Crss Extremely High Frequency Operation Repetitive Avalanche Rated

SL-1-C1-0R050L

Contextual Info: ANALOG ► DEVICES Precision Voltage Regulator Controller ADP3310 FEATURES ±1.5% Accuracy Over Line, Load and Temperature Low Power BiCMOS: 800 |*.A Quiescent Current Shutdown Current: 1 |j.A Typical Stable with 10 |iF Load Capacitor +2.5 V to +15 V Operating Range

1RF740

Abstract: mosfet 1RF740 IRF740 ir IRF740 ScansUX1020 ScansUX102 International Rectifier IRF740 irf740 mosfet
Contextual Info: PD-9.375H International lïsRi Rectifier IRF740 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^DS on = 0 - 5 5 0 lD = 10A Description Third Generation HEXFETs from international Rectifier provide the designer

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

IIRF743R

Abstract: IRF740R IRF741R IRF742R IRF743R
Contextual Info: Rugged Power MOSFETs IRF740R, IRF741R IRF742R, IRF743R File Number 2033 Avalanche Energy Rated N-Channel Power M OSFETs T E R M IN A L D IA G R A M 10A and 8A, 400V-300V rDs on = 0.550 and 0.80 D Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited