1S15 Search Results

1s1555 diode

Abstract: silicon diode 151555 1s1555 silicon diode 1S1555 1s1554 diode 1S1554 1S1553/1S1555
Contextual Info: TOSHIBA W? {DISCRETE/OPTO} 9097250 TOSHIBA DeT| TDT?2SG 0 0 0 ^ 7 D I S C R E T E / O P T O _^ 67C 09297 3 | D. / - Silicon Epitaxial "Planar Type 1S1553-1S1555 Diode Unit in tran GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES:

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

1S1555

Abstract: 1S1553 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555 1SS133 1N4148 1SS176
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N4148 1S SERIES 1SS SERIES SWITCHING DIODES 1. SWITCHING DIODES ABSOLUTE MAXIMUM RATINGS TYPE V RM V 1N4148 100 1S1553 70 1S1555 35 1SS133 90 1SS176 35 1SS270 30 V R (V) IF(mA) IO(mA) I FS(mA)1 Sec P(mw) 75 60 30 80 30 30 450 300

Contextual Info: 1S1578 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current12 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)25’

Contextual Info: 1S1577 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current12 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)25’

Contextual Info: 1S1574 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.30G P(D) Max. (W)1.0 Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: 1S1544 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage30 t(rr) Max.(s) Rev.Rec. Time100n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m

1s1588

Abstract: Diode 1S1588 1S1587 1S1536 1s85
Contextual Info: TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA ~ b7 Dlf| ^ 7 2 5 0 DISCRETE/OPTO _ 67C_09299_. 1S1585—1S1588 Silicon Epitaxial' Planar Type Diode ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES: Low Forward Voltage : Vf =1.0V (Max.) . Small Total Capacitance : Cx=2pF (Max.)

1S1540

Abstract: 1S798 1S799 1S800 1S989 1S990-A 1Z10 1Z10A 1Z11 1Z11A
Contextual Info: - • w m s ft % p mm 12 Vz V Wèt\ "J » Zzmax LW h JJ.-L«* J 3Hi \ r Vz I Rinax Zzfcmax * © fft :i (mt) (nA) 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A

1S1585

Abstract: DO-204AH DO204AH
Contextual Info: 1S1585 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 2 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8)

isi555

Abstract: 1S130 1S1302 1S15 1S19
Contextual Info: - * 1S978 1S981 1S982 1S983 1S984 1S98S 1S986 1S987 1S988 1S1146 1S1147 IS 1148 1S1149 1S1208 1S1295 1S12 9 6 1S1301 1S13Û1 1S130 2 1S130 2 1S13 0 3 1S130 3 1S15 4 4 A 1S1545 1S15 5 3 1S15 5 4 1S1555 1S158 5 1S158 6 1S1587 1S1588 1S15 9 7 1S1598 1S1599 1S16 0 0

1S1544A

Abstract: ISI553 1S130 1S1302 1S15 1S19
Contextual Info: - À ft * 1S978 1S981 1S982 1S983 1S984 1S98S 1S986 1S987 1S988 1S1146 1S1147 IS 1148 1S1149 1S1208 1S1295 1S12 9 6 1S1301 1S13Û1 1S130 2 1S130 2 1S13 0 3 1S130 3 1S15 4 4 A 1S1545 1S15 5 3 tt S l o , If * IFM I ft ft VFmax fsm % IS] ft ft ft t rr ns C t(pF)

isi555

Abstract: 1S130 1S1302 1S15 1S19
Contextual Info: - * 1S978 1S981 1S982 1S983 1S984 1S98S 1S986 1S987 1S988 1S1146 1S1147 IS 1148 1S1149 1S1208 1S1295 1S12 9 6 1S1301 1S13Û1 1S130 2 1S130 2 1S13 0 3 1S130 3 1S15 4 4 A 1S1545 1S15 5 3 1S15 5 4 1S1555 1S158 5 1S158 6 1S1587 1S1588 1S15 9 7 1S1598 1S1599 1S16 0 0

isi555

Abstract: 1S130 1S1302 1S15 1S19
Contextual Info: - À ft * 1S978 1S981 1S982 1S983 1S984 1S98S 1S986 1S987 1S988 1S1146 1S1147 IS 1148 1S1149 1S1208 1S1295 1S12 9 6 1S1301 1S13Û1 1S130 2 1S130 2 1S13 0 3 1S130 3 1S15 4 4 A 1S1545 1S15 5 3 tt S l o , If * IFM I ft ft VFmax fsm % IS] ft ft ft t rr ns C t(pF)

1S1544A

Abstract: ISI588 ISI553 isi555 isi585 1s1s88 1S130 1S1302 1S15 1S19
Contextual Info: - * 1S978 1S981 1S982 1S983 1S984 1S98S 1S986 1S987 1S988 1S1146 1S1147 IS 1148 1S1149 1S1208 1S1295 1S12 9 6 1S1301 1S13Û1 1S130 2 1S130 2 1S13 0 3 1S130 3 1S15 4 4 A 1S1545 1S15 5 3 1S15 5 4 1S1555 1S158 5 1S158 6 1S1587 1S1588 1S15 9 7 1S1598 1S1599 1S16 0 0

IS1588

Abstract: Diode IS1588 1S1588 1S1585 Diode 1S1587 1S1587 Diode 1S1588 1s1587 diode 1s1585-1s1588 100S
Contextual Info: Silicon Epitaxial' Planar Type ï ft F r 1S15 8 5 -1 $1588 Diode Unit in mm r I • I* ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES; * . Low Forward Voltage : Vf =1.0V Max. t « Small Total Capacitance : Cx=2pF (Max.) » ► . Fast Reverse Recovery Time : Trr-2ns (Max.)

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching diode 1S1553 . 500mW DO-35 . Glass silicon switching diodes We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings Ta=25°C Symbol Value Unit Reverse Voltage

is1555

Abstract: silicon diode 151555 IS1553 1S1555 1s1555 diode silicon diode 1S1555 1S1553-1S1555 1S1553 MARKING toshiba 133 1S1554
Contextual Info: TOSHIBA b7 {DISCRETE/OPTO} 9097250 TOSHIBA DE-! TO^ESO OOCHEn? 3 | D I S C R E T E / O P T O _ ^ 67C 09297 D. / - Silicon Epitaxial "Planar Type 1S1553—1S1555 Diode Unit in min GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES :

FC54M

Abstract: FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"
Contextual Info: CROSS • — K - f -y _ REFERENCE S w itc h in g d io d e s Marker TOSHIBA NEC MATSUSHITA ROHM PMUPS HITACHI Factage 1SS172 1SS267 DO-41 1S1555, 1S1588 MA150 1S953 1S2472, 1S2473 1S2076 1S2787 1SS104 MA161 1S1553, 1S1554 1S2471,1SS41 1S2076A 1S2092, 1S2460

Contextual Info: 1S1564 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.30G P(D) Max. (W)3.0 Semiconductor MaterialSilicon Package StylePin Mounting StyleS

diode cross reference 1s1555

Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Contextual Info: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,

1S1540

Abstract: 1S798 1S799 1S800 1S989 1S990-A 1Z10 1Z10A 1Z11 1Z11A
Contextual Info: - • w m s ft % p mm 12 Vz V Wèt\ "J » Zzmax LW h JJ.-L«* J 3Hi \ r Vz I Rinax Zzfcmax * © fft :i (mt) (nA) 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A

1S990-A

Abstract: IS990 1S1540 1S798 1S799 1S800 1S989 1Z10 1Z10A 1Z11
Contextual Info: - • w m s ft % p mm 12 Vz V Wèt\ "J » Zzmax LW h JJ.-L«* J 3Hi \ r Vz I Rinax Zzfcmax * © fft :i (mt) (nA) 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A

Z12A

Abstract: 1S1540 1S798 1S799 1S800 1S989 1S990-A 1Z10 1Z10A 1Z11
Contextual Info: - • w m s ft % p mm 12 Vz V Wèt\ "J » Zzmax LW h JJ.-L«* J 3Hi \ r Vz I Rinax Zzfcmax * © fft :i (mt) (nA) 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A