1S2112 Search Results

MRF951

Contextual Info: Order this data sheet by MRF951/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors r MRF951 MMBR951,L MRF9511,L . . . designed for use in high gain, low noise small-signal amplifiers. This series features

Contextual Info: *W LETT mL'hpt HMHEW P ackard Silicon Bipolar MMIC 2.5 GHz Variable Gain Amplifier Technical Data IVA-14208 IVA-14228 Features • Differential Input and Output Capability • DC to 2.5 GHz Bandwidth; 3.4 Gbits/s Data Rates • High Gain: 24 dB Typical • Wide Gain Control Range:

1s211

Abstract: 2I k
Contextual Info: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

sot 223 marking code jb

Abstract: pj 939 pj 936 R/diode pj 936
Contextual Info: Whpl H E W L E T T mLìiM P A C K A R D Silicon Bipolar Monolithic Amplifiers HPMA-0600 HPMA-0611 HPMA-0635 HPMA-0685 HPMA-0686 Technical Data Features HPMA-0600 • 3 dB B andw idth: DC to 1.0 GHz • 19.9 dB G ain Typical at 0.5 GHz • Low Noise F igure: 2.7 dB

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

transisto ot 306

Abstract: 1147 x motorola
Contextual Info: MOTOROLA O rder this docum ent by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise Transistors M R F 2947A T 1 ,T 2 M R F 2947R A T 1 ,T 2 M otorola’s MRF2947 device contains two high performance, low -noise NPN silicon bipolar transistors. This device has two 941 die housed in the high

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

MRF545

Abstract: MRFC545
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F545 M RFC545 The RF Line PNP S ilicon High Frequency Transistors . . . d e s ig n e d f o r h ig h - f r e q u e n c y a n d m e d iu m a n d h ig h r e s o lu t io n c o lo r v id e o d is p la y m o n it o r s .

GP141

Abstract: LG CRT
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • b3b?254 GOTMSG? 4 ■ "T^ 3 3 ~ 0 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA LT1814 The RF Line NPN S ilic o n High Fre q u e n cy T ra n sisto r f r = 1000 MHz MIN HIGH FREQUENCY TRANSISTOR NPN SILICON . . . s p e cifica lly desig n ed fo r CRT d riv e r a p p lica tio n s re q u irin g h ig h v o lta g e and high

st 9935

Abstract: A9935 HPMA-9986 and/ic 9935 a 8 pin
Contextual Info: T tip l HEW LETT wL'KM P A C K A R D I Silicon Bipolar Monolithic Amplifiers HPM A-9900 H PM A -9935 HPM A-9970 HPM A-9985 HPM A-9986 Technical D ata F ea tu re s H PM A -9900 • 15.6 d B O p e n L o o p G a in T y p ic a l a t 1 G H z • 14.6 dB m P jjjg T y p ic a l a t

1S2112

Contextual Info: M AXIM UM RATINGS Symbol MPS536 Unit C o lle c to r -E m itte r V o lta g e Rating v CEO -1 0 Vdc C o lle c to r-B a s e V o lta g e VCBO -1 5 Vdc E m itte r-B a s e V o lta g e Veb o -4 .5 Vdc C o n tin u o u s >C -3 0 mA P o w e r D is s ip a tio n iv T a = 25°C