1SS11 Search Results

1SS119

Abstract: 1SS119 diode Hitachi DSA002788
Contextual Info: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180A Z Rev. 1 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.

1SS110

Abstract: Hitachi DSA0014
Contextual Info: ADE-208-179A Z 1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch Rev. 1 Nov. 1994 Features Outline • Low forward resistance. (rf = 0.9Ω max) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy

1SS119

Contextual Info: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.

s118 diode

Abstract: S118 1SS118 diode s118 band switching diode 1S118 Hitachi DSA0040
Contextual Info: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 Z Rev. 0 Features • High average forward current. (I O = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code 1SS118 Black S118

1SS119

Contextual Info: 1SS119 HIGH SPEED SWITCHING DIODE DO - 34 Glass FEATURES : • Low capacitance. C = 3.0 pF max • Short reverse recovery time.(Trr = 3.5 ns max) • Peak reverse voltage:max. 35 V • Pb / RoHS Free 1.00 (25.4) min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode

Hitachi DSA001653

Abstract: 1SS110
Contextual Info: 1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B Z Rev. 2 Features • Low forward resistance. (rf = 0.9Ωmax) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability.

1SS110

Abstract: Hitachi DSA00492
Contextual Info: 1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B Z Rev. 2 Features • Low forward resistance. (r f = 0.9Ωmax) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability.

Sj 35 diode

Abstract: 1SS118
Contextual Info: 1SS118-Silicon Epitaxial Planar Diode for High Speed Switching Features Outline High average forward current. I o=20GmA High reliability with glass seal. =d= 1- I f - 1 1 S1 I 1- iL—— I \ Ordering Information

1SS119

Contextual Info: ADE-208-180A Z 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI Features Rev, 1 Aug. 1995 Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time, (trr =3.5ns max) • Sm all g la ss p ackage (M H D ) en a b les ea sy

1SS118

Abstract: s118 diode s118 diode s118
Contextual Info: ADE-208-297 Z 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI Features Rev. 0 Dec. 1994 Outline • High average forward current. (I o=200mA) • High reliability with glass seal. =C3= 3c: IE Type No. Cathode band Ordering Information

S118

Abstract: 1SS118 s118 diode Hitachi DSA00493
Contextual Info: ADE-208-297 Z 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching Rev. 0 Dec. 1994 Features Outline • High average forward current. (I o=200mA) • High reliability with glass seal. S1 18 1 Ordering Information Type No. Cathode band Mark Package Code

1ss135

Abstract: 1SS152 ISS133 1SS116 ISS132 1SS175 250mff 1SS131 1SS142 ISS149
Contextual Info: - m 15 * m 1SS94 1 S S 10 4 i ssilo I S S I 14 ISSUS I S S I 16 I S S I 18 1SS119 1SS120 1 S S 121 1SS123 1SS130 1SS 131 ISSI 32 1SS133 ISSI 3 4 1SS135 ISSI 36 1SS137 1SS138 1SS139 1 SS 140 1SS141 1 S S 14 2 1SS143 1SS 14 4 1S S 14 5 1SS146 1SS147 1 SS 149

1SS119

Abstract: GRZZ0002ZC-A REJ03G0564-0300 1SS119 diode
Contextual Info: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0564-0300 Previous: ADE-208-180B Rev.3.00 Mar 23, 2005 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.

1SS119

Contextual Info: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-180A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.

1ss119

Abstract: Hitachi DSA0014
Contextual Info: ADE-208-180A Z 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching Rev. 1 Aug. 1995 Features Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time. (trr =3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.

1SS119

Contextual Info: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching Features Outline • Low capacitance. C=3.0pF max • Short reverse recovery time, (trr =3.5ns max) • S m all g lass p ac k ag e (M HD ) en ab les easy mounting and high reliability. <3= - f

1SS119

Abstract: Hitachi DSA00340
Contextual Info: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180B Z Rev.2 Sep. 2000 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.

1SS110

Contextual Info: 1SS110-Silicon Epitaxial Planar Diode for Tuner Band Switch Features Outline • Low forward resistance, rf = 0.9Q max • Suitable for 5mm pitch high speed automatical insertion. • Sm all glass package (M H D) enables easy mounting and high reliability.

s118 diode

Abstract: s118 jedec do 35 1SS118 Hitachi DSA001653
Contextual Info: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 Z Rev. 0 Dec. 1994 Features • High average forward current. (IO = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code 1SS118

ISS133

Abstract: 1SS152 1SS135 1SS142 1SS175A 250mff ISS149 1SS104 1SS116 1SS131
Contextual Info: - * m s n % a —A 1SS 94 1 S S 10 4 m z I S S I 14 IS S U S H B B issilo I S S I 16 I S S I 18 1SS119 1SS120 1 S S 121 ÌL ÌL ÌL H i1 BÌL BÌL B ÌL B ÌL Vr r m Vr V (V) 40 35 35 30 35 80 100 75 35 70 75 m IFM T & f t I o, I f * (mA) (mA) C C ) T CC)

Contextual Info: ADE-208-297 Z 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI Rev. 0 Dec. 1994 Outline Features • High average forward current. (I o=2()0mA) • High reliability with glass seal. =cis= |S1 Type No. Cathode band Ordering Information

1SS119

Abstract: ECG SEMICONDUCTOR DATA BOOK HITACHI DIODE DSA003641
Contextual Info: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180B Z Rev.2 Sep. 2000 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.

Contextual Info: H ITACHI ADE-208-179A Z 1SS110 Silicon Epitaxial Planar Diode for Timer Band Switch HITACHI Features Rev. 1 Nov. 1994 Outline • Low forward resistance, (rj- = 0.9£2 max) • Suitable for 5mm pitch high speed automatical insertion. • S m a ll g la s s p a c k a g e (M H D ) e n a b le s easy

s118 diode

Abstract: diode s118
Contextual Info: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-297 Z Rev. 0 Dec. 1994 Features • High average forward current. (I0 = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code