UNIT2607 Search Results

Contextual Info: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)

ha17903

Contextual Info: HA17903 Series Dual Comparator REJ03D0687-0100 Previous: ADE-204-048 Rev.1.00 Jun 15, 2005 Description HA17903 are comparators designed for car use and control system use. They provide wide voltage range with single power source, and the change of supply current is small, because it is

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

a888 513

Contextual Info: 2SC5849 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0759-0100 Previous ADE-208-1469 Rev.1.00 Aug.10.2005 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: 2SC2620 Silicon NPN Epitaxial Planar REJ03G0704-0200 Previous ADE-208-1071 Rev.2.00 Aug.10.2005 Application VHF amplifier, Local oscillator Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings

Contextual Info: 2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 Previous: ADE-208-1273 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source

Contextual Info: 2SK1862, 2SK1863 Silicon N Channel MOS FET REJ03G0982-0200 Previous: ADE-208-1329 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator

Contextual Info: BB503C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0834-0500 Previous ADE-208-812C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz

Contextual Info: HD74LS165A Parallel-Load 8-bit Shift Register REJ03D0449–0300 Rev.3.00 Jul.15.2005 The LS165A are 8-bit serial shift registers that shift the data in the direction of QA toward QH when clocked. Parallel-in access to each stage is made available by eight individual direct data inputs that are enabled by a low level at the shift /

HVC131

Contextual Info: HVC131 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0420-0300 Previous: ADE-208-422B Rev.3.00 Oct 29, 2004 Features • Low capacitance. (C = 0.8 pF max) • Low forward resistance. (rf = 1.0 Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

HVD144A

Abstract: PUSF0002ZB-A diode mark T7
Contextual Info: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0429-0200 Rev.2.00 Sep 21, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.

RJK2508DPK

Abstract: PRSS0004ZE-A RJK2508DPK-E SC-65
Contextual Info: RJK2508DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G0508-0200 Rev.2.00 Feb.10.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline PRSS0004ZE-A Previous code: TO-3P D 1. Gate 2. Drain (Flange) 3. Source

HVC190

Contextual Info: HVC190 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator REJ03G0441-0100 Previous: ADE-208-1595 Rev.1.00 Dec 22, 2004 Features • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 3.0 Ω typ) • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

is2076a

Abstract: HA16150P HA16150T TSSOP-16 G9BP High-Speed Current Mode Push-Pull PWM Control IC
Contextual Info: HA16150T/P High-Speed Current Mode Push-Pull PWM Control IC REJ03F0146-0200 Previous: ADE-204-071A Rev.2.00 Jun 15, 2005 Description The HA16150 is a high-speed current mode PWM control IC with push-pull dual outputs, suitable for high-reliability, high-efficiency, high-mounting-density isolated DC-DC converter and high-output AC-DC converter control.

HSB0104YP

Abstract: PTSP0004ZB-A SC-82
Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

HRC0203C

Contextual Info: HRC0203C Silicon Schottky Barrier Diode for Rectifying REJ03G0619-0300 Previous: ADE-208-1518B Rev.3.00 May 20, 2005 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

HSD278

Abstract: PUSF0002ZB-A
Contextual Info: HSD278 Silicon Schottky Barrier Diode for Detector REJ03G0605-0200 Previous: ADE-208-1015A Rev.2.00 Apr 15, 2005 Features • Low forward voltage, Low capacitance. • Super small Flat Lead Package (SFP) is suitable for surface mount design. Ordering Information

rjk5020

Abstract: RJK5020DPK-E PRSS0004ZE-A RJK5020DPK SC-65
Contextual Info: RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1263-0100 Rev.1.00 Sep. 23, 2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P D 1. Gate

marking code B2 SMD ic

Abstract: RENESAS marking code making code for transistor RENESAS marking code package smd TRANSISTOR code marking 013 smd code marking for japanese smd TRANSISTOR code marking e1 TRANSISTOR SMD MARKING CODE UA PXSF0006LA-A TRANSISTOR SMD MARKING CODE X D
Contextual Info: HTT1213E Silicon NPN Epitaxial Twin Transistor REJ03G0526-0100 Previous ADE-208-1449(Z Rev.1.00 Feb.07.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent

cs 2648

Abstract: 2648f modeling of ac dc ac boost converter chapter bosch servo module SM 10/20 723 ic internal diagram HITACHI microcontroller H8S family 2DT8 scr driver dc motor speed control 1.5 CSTN LCD bosch sm ac drive
Contextual Info: REJ09B0257-0500 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2646 Group, H8S/2646R F-ZTAT,