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    1SS196 Search Results

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    1SS196 Price and Stock

    Toshiba America Electronic Components 1SS196(TE85L,F)

    DIODE GEN PURP 80V 100MA SC59-3
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    DigiKey 1SS196(TE85L,F) Cut Tape 2 1
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    1SS196(TE85L,F) Digi-Reel 2 1
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    1SS196(TE85L,F) Reel 3,000
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    Mouser Electronics 1SS196(TE85L,F) 4,336
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    Verical 1SS196(TE85L,F) 9,513 618
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    1SS196(TE85L,F) 659 354
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    Bristol Electronics 1SS196(TE85L,F) 1,346
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    Quest Components 1SS196(TE85L,F) 7,610
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    Chip1Stop 1SS196(TE85L,F) Cut Tape 659
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    Micro Commercial Components 1SS196-TP

    Interface
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    DigiKey 1SS196-TP Bulk 3,000
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    Toshiba America Electronic Components 1SS196(TE85R)

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    Quest Components 1SS196(TE85R) 3,675
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    1SS196 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS196 Galaxy Semi-Conductor Holdings Surface mount switching diode Original PDF
    1SS196 Kexin Ultra High Speed Switching Application Original PDF
    1SS196 Toshiba Japanese - Diodes Original PDF
    1SS196 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1B) Original PDF
    1SS196 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS196 TY Semiconductor Ultra High Speed Switching Application - SOT-23 Original PDF
    1SS196 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS196 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS196 Toshiba Toshiba Shortform Catalog Scan PDF
    1SS196 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan PDF
    1SS196T5LT Toshiba 1SS196T5LT - Diode Switching 85V 0.3A 3-Pin S-Mini Original PDF
    1SS196TE85L Toshiba 1SS196 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS196TE85L2 Toshiba 1SS196 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS196(TE85L,F) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE ULTRA HS 80V 100MA SC-59 Original PDF
    1SS196TE85R Toshiba 1SS196 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS196TE85R2 Toshiba 1SS196 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS196-TP Micro Commercial Interface Original PDF

    1SS196 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking G3

    Abstract: 1SS196 J-STD-020D
    Text: 1SS196 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic


    Original     		PDF 1SS196 OT-23 OT-23 J-STD-020D 2002/95/EC marking G3 1SS196 J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS196 Features • • • • Low Leakage Current Surface Mount SOT-23 Package Epoxy meets UL 94 V-0 flammability rating


    Original     		PDF 1SS196 OT-23 150mW OT-23 100mA -55OC 150OC 150OC

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 SOT-23 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: G3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage


    Original     		PDF OT-23 1SS196 OT-23

    FD MARKING CODE SOT23

    Abstract: MARKING fd SOT23 1SS196
    Text: 1SS196 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: FD SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Ta = 25OC


    Original     		PDF 1SS196 OT-23 100mA FD MARKING CODE SOT23 MARKING fd SOT23 1SS196

    Untitled

    Abstract: No abstract text available
    Text: 1SS196 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  High Conductance   Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability


    Original     		PDF 1SS196 OT-23, MIL-STD-202,

    G3 SOT-23

    Abstract: MARKING G3 SOT-23 DC surface mount power diode 1SS196 marking G3
    Text: BL Galaxy Electrical Production specification Surface mount switching diode 1SS196 FEATURES z Pb Low forward voltage VF 3 =0.9V(typ). Lead-free z Fast switching. z Fast reverse recovery time:trr=1.6ns(typ) APPLICATIONS z High speed switching application. SOT-23


    Original     		PDF 1SS196 OT-23 BL/SSSDC006 G3 SOT-23 MARKING G3 SOT-23 DC surface mount power diode 1SS196 marking G3

    1SS196

    Abstract: No abstract text available
    Text: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS196 SC-59 1SS196

    marking G3

    Abstract: 1SS196
    Text: 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.


    Original     		PDF 1SS196 OT-23 OT-23 100mA 1SS196 marking G3

    1SS196

    Abstract: No abstract text available
    Text: RECTRON 1SS196 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


    Original     		PDF 1SS196 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS196

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS196 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VF 3 = 0.9 V(Typ.) 0.55 Small Package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) +0.05


    Original     		PDF 1SS196 OT-23

    marking G3

    Abstract: a10t 1SS196
    Text: 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.


    Original     		PDF 1SS196 OT-23 OT-23 100mA 1SS196 marking G3 a10t

    1SS196

    Abstract: No abstract text available
    Text: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS196 SC-59 1SS196

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS196 Features • • • • Low Leakage Current Surface Mount SOT-23 Package Epoxy meets UL 94 V-0 flammability rating


    Original     		PDF 1SS196 OT-23 150mW OT-23 100mA -55OC 150OC

    Untitled

    Abstract: No abstract text available
    Text: 1SS196 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA • Case: SOT-23 Plastic


    Original     		PDF 1SS196 OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA May-2009, KSYR10

    1SS196

    Abstract: No abstract text available
    Text: 1SS196 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS196 ○ 超高速度スイッチング用 z z z z : : : : 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm


    Original     		PDF 1SS196 SC-59 236MOD 100mA 1SS196

    Switching Diodes

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS196 Features • • • • Low Leakage Current Surface Mount SOT-23 Package Epoxy meets UL 94 V-0 flammability rating


    Original     		PDF 1SS196 OT-23 150mW OT-23 100mA -55OC 150OC Switching Diodes

    top marking c3 sot23

    Abstract: marking C3 sot-23 1SS226 c3 1SS193 F3 SOT-23 DIODE 1SS184 MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 marking G3
    Text: 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead Pb -Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications


    Original     		PDF 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 OT-23 OT-23, MIL-STD-202, OT-23 100mA 1SS181 1SS184 1SS187 top marking c3 sot23 marking C3 sot-23 1SS226 c3 1SS193 F3 SOT-23 DIODE 1SS184 MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 marking G3

    ISS19

    Abstract: ISS196 marking G3 1SS196
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 SOT-23 Switching DIODES FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. N.C. MARKING: G3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃


    Original     		PDF OT-23 1SS196 OT-23 100mA ISS19 ISS196 marking G3 1SS196

    Untitled

    Abstract: No abstract text available
    Text: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS196 SC-59 O-236MOD 100mA

    Untitled

    Abstract: No abstract text available
    Text: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High-Speed Switching Applications z Small package: SC-59 z Low forward voltage: VF 3 = 0.9 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 0.9 pF (typ.)


    Original     		PDF 1SS196 SC-59

    1SS196

    Abstract: No abstract text available
    Text: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS196 SC-59 1SS196

    1SS196

    Abstract: No abstract text available
    Text: 1SS196 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + G5 2.5-0.3 FEATURES: . Small Package SOT-23M0D . Low Forward Voltage V F = 0 .9 V T y p . . Fast Reverse Recovery Time trr= l ,6 n s ( T y p .) . Small Total Capacitance


    OCR Scan     		PDF 1SS196 OT-23M0D 01/fF 1SS196

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS196 1 S S 1 96 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.5 2 .5 -0 .3 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : Vp 3 = 0.9V (Typ.)


    OCR Scan     		PDF 1SS196 SC-59 961001EAA2'

    1SS19

    Abstract: 1SS19 TOSHIBA
    Text: TOSHIBA 1SS196 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS19 6 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 2 .5 - 0.5 0.3 + 0.25 1 .5 -0 .1 5 • Small Package : SC-59 • Low Forward Voltage : V jt 3 = 0.9V (Typ.) • Fast Reverse RecoveryTime


    OCR Scan     		PDF 1SS196 1SS19 SC-59 01//F 961001EAA2' 1SS19 TOSHIBA