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    1SS271 Price and Stock

    Toshiba America Electronic Components 1SS271(TE85L,F)

    RF Diode Schottky 6V 0.03A 3-Pin S-Mini T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 1SS271(TE85L,F) 2,387 317
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    • 1000 $0.2309
    • 10000 $0.2309
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    Quest Components 1SS271(TE85L,F) 1,909
    • 1 $0.705
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    • 100 $0.705
    • 1000 $0.282
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    Chip1Stop 1SS271(TE85L,F) Cut Tape 41,967
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    • 10 $0.43
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    • 1000 $0.0911
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    Toshiba America Electronic Components 1SS271-TE85L

    SILICON, VHF-UHF BAND, MIXER DIODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS271-TE85L 10,200
    • 1 $0.8
    • 10 $0.8
    • 100 $0.8
    • 1000 $0.8
    • 10000 $0.24
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    1SS271 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS271 Kexin VHF UHF Mixer Applications Original PDF
    1SS271 Toshiba Japanese - Diodes Original PDF
    1SS271 TY Semiconductor VHF UHF Mixer Applications - SOT-23 Original PDF
    1SS271 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS271 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SS271 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS271 Toshiba DIODE SCHOTTKY DIODE 6V 0.03A 3(1-3G1G) Scan PDF
    1SS271 Toshiba DIODE (VHF~UHF MIXER APPLICATION) Scan PDF
    1SS271 Toshiba Diode Silicon Epitaxial Schottky Barrier Type Scan PDF
    1SS271TE85L Toshiba 1SS271 - DIODE SILICON, VHF-UHF BAND, MIXER DIODE, Microwave Mixer Diode Scan PDF
    1SS271TE85R Toshiba 1SS271 - DIODE SILICON, VHF-UHF BAND, MIXER DIODE, Microwave Mixer Diode Scan PDF

    1SS271 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS271

    Abstract: No abstract text available
    Text: 1SS271 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS271 ○ VHF~UHF 周波数変換用 • 単位: mm 小型パッケージです。 • 順電圧偏差が小さい。 • 端子間容量偏差が小さい。 : ΔCT = 0.1 pF 最大


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    PDF 1SS271 SC-59 1SS271

    smd marking BD

    Abstract: 1SS271
    Text: Diodes SMD Type VHF~UHF MIXER APPLICATION 1SS271 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small Delat total capacitance: ÄCT = 0.1pF Max 0.55 Small Delat forward voltage:ÄVF = 10 mV(Max) 2 +0.1 0.95-0.1 +0.1 1.9-0.1


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    PDF 1SS271 OT-23 smd marking BD 1SS271

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS271 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small Delat total capacitance: ÄCT = 0.1pF Max 0.55 Small Delat forward voltage:ÄVF = 10 mV(Max) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 1SS271 OT-23

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


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    PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


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    PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


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    PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


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    PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000

    2sc5108

    Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
    Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,


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    PDF BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz

    3sk catalog

    Abstract: TE85L Toshiba
    Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS


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    PDF BCE0003H 3sk catalog TE85L Toshiba

    1SS271

    Abstract: No abstract text available
    Text: TOSHIBA 1SS271 TOSHIBA DIODE V H F- U H F M IXER APPLICATION • • • 1 SS271 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr = 10mV Max. : AOr = 0.1pF (Max.) M A X IM U M RATINGS (Ta = 25°C)


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    PDF 1SS271 SC-59 1SS271

    1SS271

    Abstract: No abstract text available
    Text: 1SS271 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE U nit in mm V H F -U H F MIXER APPLICATION • • • Small Package Small Delta Forward Voltage Small Delta Total Capacitance s : AVp = 10mV Max. : ACx = 0.1pF (Max.) -ec>cs ! +1I MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SS271 SC-59 10//A 1SS271

    k192a

    Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
    Text: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188


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    PDF 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995

    Untitled

    Abstract: No abstract text available
    Text: 1SS271 TOSHIBA TOSHIBA DIODE V H F- U H F M IXER APPLICATION 1 SS271 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 S . 5 - 0 .3 • • • + 0.2 5 l. E - 0 . 1 5 Small Package Small Delta Forward Voltage Small Delta Total Capacitance •e f- : AVjr= 10mV Max.


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    PDF 1SS271 SS271 SC-59

    1SS271

    Abstract: No abstract text available
    Text: 1SS271 TO SH IBA TOSHIBA DIODE V H F -U H F MIXER APPLICATION • • • SILICON EPITAXIAL SCHO TTKY BARRIER TYPE 1 SS271 Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjp = 10mV Max. : AOr = 0.1pF (Max.) MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SS271 SC-59 1SS271

    isv149

    Abstract: ISV101 iss314 ISV262 ISV172 1SS242 ISV103 ISV255 1SS239 ISV229
    Text: V a ria b le C a p a c ita n c e D iode F5 Type No. Package Type No. ISV101 - ISV102 - ISV103 Package - ISV225 MINI SUPER MINI ISV147 ISV228 ISV149 HN1V01H, HN1V02H, HN2V02H Package Type No. FM8 Type No. Package Type No. Vr Ct V (pF) Ct V r(V) (pF) Application


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    PDF ISV101 ISV102 ISV103 ISV147 ISV149 ISV225 ISV228 HN1V01H, HN1V02H, HN2V02H iss314 ISV262 ISV172 1SS242 ISV255 1SS239 ISV229

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


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    PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    1SS283

    Abstract: 1SS281 1SS276 1SS237 HSR276 1SS239 1SS246 1SS271 1SS282 1SS285
    Text: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o


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    PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz i15-0Â 1SS283 1SS281 1SS276 HSR276 1SS239 1SS271 1SS282 1SS285

    1SS276

    Abstract: 1SS281 1SS246 1SS283 1SS237 HSR276 1SS239 1SS271 1SS282 1SS285
    Text: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o


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    PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS276 1SS281 1SS283 HSR276 1SS239 1SS271 1SS282 1SS285

    1SS281

    Abstract: HSR276 1SS239 1SS246 1SS271 1SS276 1SS282 1SS283 1SS285 1SS286
    Text: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o


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    PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS281 HSR276 1SS239 1SS271 1SS276 1SS282 1SS283 1SS285 1SS286

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL SC H O T T K Y BA RRIER T Y P E DIODE ^ 5 5 2 7 V H F - U H F M IX E R A P P LIC A T IO N • • • 1 U n it in m m Sm all Package Sm all Delta Forward Voltage Small Delta Total Capacitance : AVp = lOmV Max. : AC'p = 0.1pF (Max.) M A X IM U M R A T IN G S (Ta = 25°C)


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    PDF 1SS271