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    1SS272 Price and Stock

    Toshiba America Electronic Components 1SS272TE85LF

    DIODE ARRAY GP 80V 100MA SC61B
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    DigiKey 1SS272TE85LF Digi-Reel 21,085 1
    • 1 $0.39
    • 10 $0.236
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    1SS272TE85LF Cut Tape 21,085 1
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    1SS272TE85LF Reel 18,000 3,000
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    Mouser Electronics 1SS272TE85LF 138,866
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    Quest Components 1SS272TE85LF 796
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    ComSIT USA 1SS272TE85LF 6,000
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    Win Source Electronics 1SS272TE85LF 34,000
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    Toshiba America Electronic Components 1SS272(TE85LF)

    Diode Switching 85V 0.1A 4-Pin SMQ T/R - Tape and Reel (Alt: 1SS272(TE85L,F))
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    Avnet Americas 1SS272(TE85LF) Reel 12 Weeks 3,000
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    Avnet Asia 1SS272(TE85LF) 32 Weeks 3,000
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    Toshiba America Electronic Components 1SS272(TE85L,F)

    Rectifier Diode Switching 85V 0.1A 4ns 4-Pin SMQ T/R
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    Verical 1SS272(TE85L,F) 73,398 315
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    1SS272(TE85L,F) 31,473 315
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    1SS272(TE85L,F) 642 290
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    Newark 1SS272(TE85L,F) Cut Tape 12,600 5
    • 1 $0.406
    • 10 $0.248
    • 100 $0.116
    • 1000 $0.104
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    Quest Components 1SS272(TE85L,F) 5,285
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    1SS272(TE85L,F) 5,285
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    1SS272(TE85L,F) 4,607
    • 1 $0.612
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    • 1000 $0.2448
    • 10000 $0.2142
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    1SS272(TE85L,F) 4,607
    • 1 $0.612
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    • 1000 $0.2448
    • 10000 $0.2142
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    Chip1Stop 1SS272(TE85L,F) Cut Tape 73,398
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    • 10 $0.199
    • 100 $0.0849
    • 1000 $0.0525
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    1SS272(TE85L,F) Cut Tape 31,473
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    EBV Elektronik 1SS272(TE85L,F) 17 Weeks 3,000
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    Toshiba America Electronic Components 1SS272(TE85L)

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    Bristol Electronics 1SS272(TE85L) 6,000
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    1SS272(TE85L) 3,956
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    Quest Components 1SS272(TE85L) 4,800
    • 1 $1.028
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    • 10000 $0.3084
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    1SS272(TE85L) 3,164
    • 1 $1.028
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    • 1000 $0.2673
    • 10000 $0.257
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    Win Source Electronics 1SS272(TE85L) 20,000
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    Toshiba America Electronic Components 1SS272

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 1SS272 5,759
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    Win Source Electronics 1SS272 73,900
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    Find more 1SS272 price and stock on Findchips.com

    1SS272 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS272 Kexin Ultra High Speed Switching Application Original PDF
    1SS272 Toshiba Japanese - Diodes Original PDF
    1SS272 Toshiba Diodes Original PDF
    1SS272 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 4(2-3J1A) Original PDF
    1SS272 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS272 TY Semiconductor Ultra High Speed Switching Application - SOT-143 Original PDF
    1SS272 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS272 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS272 Toshiba Toshiba Shortform Catalog Scan PDF
    1SS272 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    1SS272 Toshiba DIODE Scan PDF
    1SS272TE85L Toshiba 1SS272 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS272(TE85L,F) Toshiba 1SS272 - Diode Switching 85V 0.1A 4-Pin SMQ T/R Original PDF
    1SS272TE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 100MA SMQ Original PDF
    1SS272TE85R Toshiba 1SS272 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS272 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS272 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS272 Unit: mm ○超高速度スイッチング用 z 順方向が良い。 : VF 3 = 0.92V (標準) z 逆回復時間が短い。 : trr = 1.6ns (標準) z 端子間容量が小さい。


    Original     		PDF 1SS272

    Untitled

    Abstract: No abstract text available
    Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS272 SC-61 100mA

    1SS272

    Abstract: No abstract text available
    Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS272 SC-61 1SS272

    f1 smd marking

    Abstract: marking A1 1SS272 smd marking A1
    Text: Diodes SMD Type Ultar High Speed Switching Applications 1SS272 Unit: mm Features Low Forward Voltage:VF 3 =0.92 V(Typ.) Fast Reverse Recovery Time:trr = 1.6 ns (Typ.) Small Total Capacitance: CT = 0.9pF(Typ.) Absolute M axim um R atings T a = 25 P aram eter


    Original     		PDF 1SS272 f1 smd marking marking A1 1SS272 smd marking A1

    1SS272

    Abstract: No abstract text available
    Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application z Small package : SC-61 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS272 SC-61 1SS272

    Untitled

    Abstract: No abstract text available
    Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS272

    1SS272

    Abstract: No abstract text available
    Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application Small package : SC-61 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS272 SC-61 1SS272

    Untitled

    Abstract: No abstract text available
    Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Ultra High Speed Switching Application Unit in mm Small package : SC-61 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS272 SC-61 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS272 Unit: mm Features Low Forward Voltage:VF 3 =0.92 V(Typ.) Fast Reverse Recovery Time:trr = 1.6 ns (Typ.) Small Total Capacitance: CT = 0.9pF(Typ.) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage


    Original     		PDF 1SS272

    1SS272

    Abstract: No abstract text available
    Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application z Small package : SC-61 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS272 SC-61 1SS272

    1SS272

    Abstract: No abstract text available
    Text: 1SS272 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS272 ○ 超高速度スイッチング用 z z z z 外形が小さい。 順方向が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm : VF = 0.92V 標準


    Original     		PDF 1SS272 100mA 1SS272

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE WÊÊF • WÊÊF m Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-61 : Vjr 3 = 0.92V (Typ.) : tj* ^ 1.6ns (Typ.)


    OCR Scan     		PDF 1SS272 SC-61 SC-61

    Untitled

    Abstract: No abstract text available
    Text: 1SS272 TO SHIBA 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0.2 2 .9 -0-3 : SC-61 : Vp 3 = 0.92V (Typ.)


    OCR Scan     		PDF 1SS272 SS272 SC-61 961001EAA2'

    1SS272

    Abstract: No abstract text available
    Text: TOSHIBA 1SS272 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 = 25°C CHARACTERISTIC Maximum Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms)


    OCR Scan     		PDF 1SS272 SC-61 961001EAA2' 1SS272

    1SS272

    Abstract: No abstract text available
    Text: 1SS272 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + 0.2 2.9 -0. 3 . Small Package : SC-61 . Low Forward Voltage : Vp=0.92V Typ. _L . Small Total Capacitance : Ct =0.95pF(Typ.) •si 4 1.90 . Fast Reverse Recovery Time : trr=1.6ns(Typ.)


    OCR Scan     		PDF 1SS272 SC-61 100mA 10raA, 1SS272

    Untitled

    Abstract: No abstract text available
    Text: 1SS272 T O SH IB A 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2 .9 -0-3 : SC-61 : Vp 3 = 0.92V (Typ.)


    OCR Scan     		PDF 1SS272 SS272 SC-61 961001EAA2'

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P