1SS41 Search Results

Contextual Info: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200

Contextual Info: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage CATHODE MARK • Unit: mm : VF 3 = 0.23V (typ.)@ IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

1S2588

Abstract: 1s2222 ISS83 is2471 1S2473 is2076a 1S2348 IS2473 1S2075 1S2076A
Contextual Info: - 150 - 1S2075 K 1S2076 1S2076A 1S 2091 1S2092 1S2095A 1S2134 1S2134 1S2135 1S2135 1S2212 1S2222 1S2348 1S2460 1S2461 1S2462 1S2463 1S2471 1S 2472 1S2473 1S2588 1S2588 1S 2787 1S 2835 1S 2836 1S 2637 1S2838 1S2880 1SR11—1200 1SRU -1500 1SS41 1SS53 1SS54

1SS416

Contextual Info: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 A Characteristic Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200

1SS419

Contextual Info: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 µA (max) CATHODE MARK • Unit: mm Maximum Ratings (Ta = 25°C)

1SS416

Contextual Info: 1SS416 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS416 ○ 高速スイッチング用 単位: mm 0.6±0.05 ん 頭 逆 逆 電 電 定格 単位 圧 VRM 35 V 圧 VR 30 V せ ん 頭 順 電 流 IFM 200 mA 平 均

Contextual Info: 1SS417 Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC 1 2014-02-13 Rev.1.0 1SS417 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

1SS417CT

Contextual Info: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200

Contextual Info: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200

Contextual Info: 1SS416 Schottky Barrier Diode Silicon Epitaxial 1SS416 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2003-06 2014-07-08 Rev.3.0 1SS416 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 )

Contextual Info: 1SS413CT Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) 3. Packaging and Internal Circuit

Contextual Info: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) • 0.034(0.85) 0.029(0.75) 0.026(0.65) 0.021(0.55) MECHANICAL DATA 0.005(0.15) • Low forward voltage : V F(3)=0.56V(typ.)

1SS412

Contextual Info: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications z Low forward voltage : VF = 1.0 V typ. z Low reverse current : IR = 0.1 nA (typ.) z Small total capacitance : CT = 3.0 pF (typ.) z Small package : SC-70 Unit: imm

Contextual Info: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) • In compliance with EU RoHS 2002/95/EC directives 0.026(0.65) 0.021(0.55) MECHANICAL DATA

1SS417CT

Abstract: ctct 10-N-0
Contextual Info: 1SS417CT 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS417CT ○ 超高速スイッチング用 単位: mm 絶対最大定格 Ta = 25°C 項目 せ ん 頭 逆 逆 電 電 記号 定格 単位 圧 VRM 45 V 圧 VR 40

1SS412

Contextual Info: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications Low forward voltage : VF = 1.0 V typ. Low reverse current : IR = 0.1 nA (typ.) Small total capacitance : CT = 3.0 pF (typ.) Small package : SC-70 Unit: imm Maximum Ratings (Ta = 25°C)

1SS413

Abstract: 11-L1 1-1L1A
Contextual Info: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5 A max : CT = 3.9pF (typ.) 0.07 M A Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 25 V Reverse voltage

1SS419

Contextual Info: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 A (max) CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C)

1SS418

Contextual Info: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF 3 = 0.23V (typ.)@ IF = 5mA CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

1s2222

Abstract: 1S2588 1s2472 1S2348 IS2076 ISS83 1S2091 is2076a is2471 IS2472
Contextual Info: - 150- 1S2075 K 1S2076 1S2076A 1S2091 1S2092 1S2095A 1S2134 1S2134 1S2135 1S2135 1S2212 1S2222 1S2348 1S2460 1S2461 1S2462 1S2463 1S2471 1S2472 1S2473 1S2588 1S2588 1S2787 1S2835 1S2836 1S2637 1S2838 1S2880 1SR11—1200 1 SR U -1500 1SS41 1SS53 1SS54 1SS55

Contextual Info: 1SS413 Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2002-11 2014-04-03 Rev.2.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

1S2473

Abstract: 1S2471 1s2472 1N3606 1SS41 1S247 1n4148 ITT 1n914b itt 1S2787 SC-40
Contextual Info: # -f ^ — K /D io d e s ROHM CO LTD 1S2471 /1S2472/1S2473/1S2787/1SS41 40E D n 7020=]=]=] 0DDb4fiS 1 S 3 RHfl 1S2471/1S2472/1S2473 1S2787/1SS41 7: 03-0 9 y IJ 3 > X fcfii + v t - K Silicon Epitaxial Planar High-Speed Switching Diodes • iiJ I: • ^ i-ffi^ììlS l/D im e n s io n s Unit : mm

Contextual Info: 1SS417TM HIGH SPEED SWITCHING APPLICATION SO D -92 3 FEATURES • Small package • Low forward voltage : V F 3 =0.56V(typ.) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) 0.010(0.25) MECHANICAL DATA • Case : SOD-923, Plastic 0.005(0.15)

Contextual Info: 1SS417TM HIGH SPEED SWITCHING APPLICATION SO D -92 3 FEATURES • Small package • Low forward voltage : VF 3 =0.56V(typ.) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) 0.010(0.25) MECHANICAL DATA • Case : SOD-923, Plastic 0.005(0.15)