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    1SV245 Search Results

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    1SV245 Price and Stock

    Toshiba America Electronic Components 1SV245-TPH3

    VARACTOR DIODE,SINGLE,UMD2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SV245-TPH3 453
    • 1 $2.1
    • 10 $2.1
    • 100 $2.1
    • 1000 $1.05
    • 10000 $1.05
    Buy Now
    1SV245-TPH3 453
    • 1 $2.1
    • 10 $2.1
    • 100 $2.1
    • 1000 $1.05
    • 10000 $1.05
    Buy Now

    1SV245 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV245 Kexin Variable Capacitance Diode (UHF SHF Tuning) Original PDF
    1SV245 Toshiba variable capacitance diode Original PDF
    1SV245 TY Semiconductor Variable Capacitance Diode (UHF SHF Tuning) - SOD-323 Original PDF
    1SV245 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SV245 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SV245 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SV245 Toshiba DIODE VAR CAP SINGLE 30V 3.31PF 2(1-1E1A) Scan PDF
    1SV245 Toshiba Variable capacitance silicon diode for UHF SHF tuning Scan PDF
    1SV245 Toshiba Variable Capacitance Diode Silicon Epitaxial Planar Type Scan PDF
    1SV245TPH2 Toshiba 1SV245 - DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode Original PDF
    1SV245TPH3 Toshiba 1SV245 - DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode Original PDF
    1SV245(TPH3) Toshiba DIODE VAR CAP SINGLE 30V 3.31PF 2(1-1E1A) T/R Scan PDF
    1SV245(TPH3,F) Toshiba 1SV245 - DIODE VARACTOR 30V 1-1E1A Original PDF
    1SV245TPH3F Toshiba 1SV245 - Varactor Diodes VARICAP DIODE Original PDF
    1SV245TPH4 Toshiba 1SV245 - DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode Original PDF
    1SV245TPHR2 Toshiba 1SV245 - DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode Original PDF
    1SV245TPHR3 Toshiba 1SV245 - DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode Original PDF
    1SV245TPHR4 Toshiba 1SV245 - DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode Original PDF

    1SV245 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SV245

    Abstract: No abstract text available
    Text: 1SV245 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV245 UHF SHF Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 5.7 typ. • Low series resistance: rs = 1.2 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original
    PDF 1SV245 1SV245

    Untitled

    Abstract: No abstract text available
    Text: 1SV245 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV245 UHF SHF Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 5.7 typ. · Low series resistance: rs = 1.2 Ω (typ.) · Excellent C-V characteristics, and small tracking error.


    Original
    PDF 1SV245

    1SV245

    Abstract: C25V IR 331 G
    Text: 1SV245 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV245 ○ UHF SHF 電子同調用 • 単位: mm 容量変化比が大きい。 : C2V/C25V = 5.7 標準 • 直列抵抗が小さい。 : rs = 1.2 Ω (標準) •


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    PDF 1SV245 C2V/C25V 1SV245 C25V IR 331 G

    1SV245

    Abstract: No abstract text available
    Text: 1SV245 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV245 UHF SHF Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 5.7 typ. • Low series resistance: rs = 1.2 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original
    PDF 1SV245 1SV245

    1SV245

    Abstract: No abstract text available
    Text: 20010110 1SV245 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz~3 GHz REVERSE VOLTAGE RANGE: VR = 2V ~ 25V Ta = 27℃


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    PDF 1SV245 020E-16 00E-04 948E-12 00E-09

    1SV245

    Abstract: No abstract text available
    Text: 1SV245 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV245 UHF SHF Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 5.7 typ. • Low series resistance: rs = 1.2 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original
    PDF 1SV245 1SV245

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SV245 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 5.7 Typ. Low Series Resistance:rs = 1.2 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02 Excellent C-V Characteristics,and Small Tracking Error.


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    PDF 1SV245 OD-323 C2V/C25V

    diode T3 Marking

    Abstract: smd diode marking 77 1SV245 marking T3
    Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV245 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 5.7 Typ. Low Series Resistance:rs = 1.2 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05


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    PDF 1SV245 OD-323 C2V/C25V diode T3 Marking smd diode marking 77 1SV245 marking T3

    1SV245

    Abstract: No abstract text available
    Text: 1SV245 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV245 UHF SHF Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 5.7 typ. · Low series resistance: rs = 1.2 Ω (typ.) · Excellent C-V characteristics, and small tracking error.


    Original
    PDF 1SV245 1SV245

    ACD0900S3C

    Abstract: 1SV245 ACD0900
    Text: A ACD0900S3C VHF/UHF CATV/TV Tuner Downconverter DATA SHEET - Rev . 0 FEATURES • Integrated Monolithic Downconverter • 8 dB Noise Figure • 10 dB Conversion Gain • High Linearity • Small Size • Low Cost • High Reliability DESCRIPTION The ACD0900 MMIC is a high performance downconverter


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    PDF ACD0900S3C ACD0900 ACD0900S3C 1SV245

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV245 UHF SHF T U N IN G • • • High Capacitance Ratio : C2V / C25V = 5.7 Typ. Low Series Resistance : rs= 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. M A X IM U M RATIN G S (Ta = 25°C)


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    PDF 1SV245 C2V/C25V 10kS2)

    1SV245

    Abstract: C25V
    Text: 1SV245 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING • High Capacitance Ratio : C2V/C25V = 5.7 Typ. • Low Series Resistance : rs = 1.20 (Typ.) • Excellent C - V Characteristics, and Small Tracking Error.


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    PDF 1SV245 C2V/C25V 1SV245 C25V

    1SV245

    Abstract: C25V
    Text: 1SV245 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 24 5 Unit in mm UHF SHF TUNING High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error.


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    PDF 1SV245 C2V/C25V 470MHz C25V

    1SV245

    Abstract: C25V
    Text: 1SV245 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING • High Capacitance Ratio : C2V/C25V = 5.7 Typ. • Low Series Resistance : rs = 1.20 (Typ.) • Excellent C - V Characteristics, and Small Tracking Error.


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    PDF 1SV245 C2V/C25V 470MHz 1SV245 C25V

    SV245

    Abstract: No abstract text available
    Text: 1SV245 TOSHIBA 1 SV2 4 5 TOSHIBA VARIABLE CAPACITANCE DIODE UHF SHF TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error.


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    PDF 1SV245 C2V/C25V SV245

    Untitled

    Abstract: No abstract text available
    Text: 1SV245 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SV245 C2V/C25V C2V/C25V

    420F

    Abstract: T362 T363 isv239 1SV238 1SV239 1SV245 1T32 1T32A 1T33
    Text: - £ 1SV238 tt £ n z. 1SV239 1SV245 1T32 1T32A v s " y ^ - 1T33 V- - 1T33A y — 1T33C y ^ - 1T 359 y — 1T360 y - — 1T3S2 y 1T362A y —— 1T 363 y - — — 1T363A y —— 1T364 y - - 1T 365 y — 1T 366 V i" HVU359 B sL HVE310 B tL HVK89 B ÎL HVM11


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    PDF 1SV238 1SV239 1SV245 1T32A 470un 022O0 1T365 1T366 HVU359 HVE310 420F T362 T363 isv239 1SV238 1SV239 1SV245 1T32 1T33

    1SV245

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR T Y P E 1SV245 UHF SHF TU N IN G • • • High Capacitance Ratio : C2V / C25V = 5.7 Typ. Low Series Resistance : rs= 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. M A X IM U M RATINGS (Ta = 25°C) SYMBOL


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    PDF 1SV245 C2V/C25V 470MHz 1SV245

    isv239

    Abstract: 1SV238 1SV239 1SV245 1T32 1T32A 1T33 1T33A 1T33C
    Text: - £ 1SV238 tt £ n z. 1SV239 1SV245 1T32 1T32A v s " y ^ - 1T33 V- - 1T33A y — 1T33C y ^ - 1T 359 y — 1T360 y - — 1T3S2 y 1T362A y —— 1T 363 y - — — 1T363A y —— 1T364 y - - 1T 365 y — 1T 366 V i" HVU359 B sL HVE310 B tL HVK89 B ÎL HVM11


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    PDF 1SV238 1SV239 1SV245 1T32A 470un 022O0 1T365 1T366 HVU359 HVE310 isv239 1SV238 1SV239 1SV245 1T32 1T33 1T33A 1T33C

    HVE310

    Abstract: 1SV245 isv239 1SV238 1SV239 1T32 1T32A 1T33 1T33A 1T33C
    Text: - £ 1SV238 tt £ n z. 1SV239 1SV245 1T32 1T32A v s " y ^ - 1T33 V- - 1T33A y — 1T33C y ^ - 1T 359 y — 1T360 y - — 1T3S2 y 1T362A y —— 1T 363 y - — — 1T363A y —— 1T364 y - - 1T 365 y — 1T 366 V i" HVU359 B sL HVE310 B tL HVK89 B ÎL HVM11


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    PDF 1SV238 1SV239 1SV245 1T32A i15-0Â 25MIN HVE310 1SV245 isv239 1SV238 1SV239 1T32 1T33 1T33A 1T33C

    Untitled

    Abstract: No abstract text available
    Text: 1SV245 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 <; \ / 7 d * UHF SHF TUNING High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.2ft (Typ.) Excellent C - V Characteristics, and Small Tracking Error.


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    PDF 1SV245 C2V/C25V C2V/C25V

    Untitled

    Abstract: No abstract text available
    Text: 1SV245 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 4 5 UHF SHF TUNING Unit in mm High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error.


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    PDF 1SV245 C2V/C25V

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737