1SV276 Search Results

Contextual Info: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 Typ. Low Series Resistance : rs = 0.22H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)

1SV276

Contextual Info: 20010110 1SV276 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V

Contextual Info: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 1SV276 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 S V2 7 6 Unit in mm High Capacitance Ratio : C iy /C 4 v = 2.0 Typ. Low Series Resistance : r$ = 0.22il (Typ.) Small Package MAXIMUM RATINGS (Ta = 25°C)

1SV276

Contextual Info: 1SV276 TOSHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SV276 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 7 6 VCO FOR UHF BAND RADIO Unit in mm • High Capacitance Ratio : C iy /C 4y = 2.0 Typ. • Low Series Resistance : rs = 0.220 (Typ.) • Small Package 0 ± 0 .0 5 MAXIMUM RATINGS (Ta = 25°C)

1SV276

Contextual Info: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)

1SV276

Contextual Info: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics

1SV276

Abstract: 300E
Contextual Info: 1SV276 TOSHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package 0 ± 0 .0 5 M A X IM U M RATINGS (Ta = 25°C)

1SV276

Contextual Info: 1SV276 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV276 ○ UHF 帯無線 VCO 用 単位: mm • 容量変化比が大きい。 : C1V/C4V = 2.0 標準 • 直列抵抗が小さい。 : rs = 0.22 Ω (標準) • 2 端子小型外囲器なので､チューナの小型化に適しています。

1SV276

Contextual Info: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iy /C 4 Y = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: Product specification 1SV276 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0Typ. Low Series Resistance:rs = 0.22 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25

marking tl

Abstract: diode marking tl diode smd marking 22 1SV276
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV276 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0Typ. Low Series Resistance:rs = 0.22 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02

02 diode R-1

Abstract: 1SV276
Contextual Info: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Maximum Ratings (Ta = 25°C)

1SV276

Contextual Info: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)

marking 16

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV276 VCO FOR UHF BAND RADIO • • • High C apacitance Ratio : C j V ''C 4 V = 2.0 Typ. Low Series R esistance : r s = 0.22Sl (Typ.) Sm all Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 1SV276 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV2 7 6 Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package MAXIMUM RATINGS (Ta = 25°C)

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。