1X326 Search Results
1X326 Price and Stock
Banner Engineering Corp PBR1X326U-VLPLASTIC FIBER, DIFFUSE REFLECTIV |
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PBR1X326U-VL | Box | 8 | 1 |
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PBR1X326U-VL | Bulk | 9 Weeks | 1 |
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Banner Engineering Corp PIRS1X326T5AL25PLASTIC FIBER; OPPOSED MODEC |
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Banner Engineering Corp PBR1X326UPLASTIC FIBER, DIFFUSE REFLECTIV |
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Banner Engineering Corp PBRS1X326UPLASTIC FIBER, DIFFUSE REFLECTIV |
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Banner Engineering Corp PBRSL1X326UPLASTIC FIBER, DIFFUSE REFLECTIV |
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1X326 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IBM13T2649JC 2M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency J Units j 3 jfcK I Clock Frequency j 100 j MHz ! jtcK |
OCR Scan |
IBM13T2649JC 2Mx64 | |
Contextual Info: IB M 1 1 M 8 8 4 5 H B 8M x 72 Chipkill Correct DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 8Mx72 Chipkill Correct EDO DIMM -Buffered inputs except RAS, Data |
OCR Scan |
8Mx72 104ns | |
Contextual Info: IBM13T2649NC 2M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency § Units 3 jfcK I Clock Frequency I 100 j MHz jtcK j Clock Cycle |
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IBM13T2649NC 2Mx64 | |
Contextual Info: IB M 1 3 T 1 6 4 9 N C Preliminary 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: I 10 CAS Latency 3 ! 12 j Units ! 3 jfcK I Clock Frequency |
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2Mx64 IBM13T1649NC 75H5936 GA14-4477-00 | |
Contextual Info: IBM13V25649AP IBM13V51649AN IBM13V25649AN IBM13V51649AP 256K/512K x 64 SGRAM SO DIMM Features 144 Pin Graphics JEDEC Standard, 8 Byte Synchro nous Small Outline Dual-In-line Memory Module Performance: Speed Grade 7R5 ! 10 ! Units I I Clock Frequency 133 ! 100 ! MHz |
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IBM13V25649AP IBM13V51649AN IBM13V25649AN IBM13V51649AP 256K/512K s5649AP | |
Contextual Info: IB M 1 1 M 1 6 7 3 5 B IB M 1 1 M 1 6 7 3 5 C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • 16Mx72 Extended Data Out EDO Mode DIMMs • System Performance Benefits: - Buffered inputs (except RAS, Data) |
OCR Scan |
16Mx72 104ns | |
1X359Contextual Info: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1 Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 tRAC ; RAS Access Tim e 60ns ; 70ns tcAC ! CAS Access Tim e 20ns ! 25ns W | Access Tim e From Address |
OCR Scan |
IBM11M1645L 1X359 | |
Contextual Info: IBM13T2649JC 2M x 64 1 Bank S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: CAS Latency • • • • • • jfcK I Clock Frequency jtcK |
OCR Scan |
IBM13T2649JC 2Mx64 75H5376 A14-4476-01 | |
Contextual Info: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Dual Bank Extended Data Out |
OCR Scan |
IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8Mx64, 8Mx72 104ns 124ns SA14-4624-04 | |
Contextual Info: IBM11N8645H IBM11N8735H 8M x 64/72 DRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity, or ECC applications • 8Mx64, 8Mx72 Extended Data Out Mode DIMMs System Performance Benefits: |
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IBM11N8645H IBM11N8735H 8Mx64, 8Mx72 104nsion | |
Contextual Info: I =¥= = = = ’= IBM13N16644HC IBM13N16734HC Preliminary 16M x 64/72 2 Bank Unbuffered SDRAM Module Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only |
OCR Scan |
IBM13N16644HC IBM13N16734HC 168-Pin 16Mx64/72 | |
Contextual Info: IBM11M16735B IBM11M16735C 16M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module • Optimized for ECC applications • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s) |
OCR Scan |
IBM11M16735B IBM11M16735C 168-Pin 16Mx72 104ns | |
Contextual Info: IBM11M4730H IBM11M4730HB 4M x 72 D RAM M O D U LE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 4Mx72 Dual Bank Fast Page Mode DIMM -Buffered inputs (except RAS, Data) |
OCR Scan |
IBM11M4730H IBM11M4730HB 4Mx72 110ns 130ns | |
Contextual Info: IBM11M16735B IBM11M16735C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/Vcc P^s) - Buffered PDs • 16Mx72 Extended Data Out (EDO) Mode |
OCR Scan |
IBM11M16735B IBM11M16735C 16Mx72 104ns | |
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Contextual Info: IB M 1 3 T 1 6 4 9 N C 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin em erging JE D E C S tandard, 8 Byte Sm all O utlin e D u al-In -lin e M em o ry M odule • P rog ram m a ble O peration: -C A S Latency: 1, 2, 3 • 1 M x64 S ynch ron ou s DR AM SO DIM M |
OCR Scan |
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Contextual Info: IBM11M8730HB 8M x 72 DRAM MODULE Features • Optimized for ECC applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: • 8Mx72 Fast Page Mode DIMM - Buffered inputs except RAS, Data - Reduced noise (32 VSs/Vcc P^s) |
OCR Scan |
IBM11M8730HB 8Mx72 | |
Contextual Info: IB M 1 1 M 4 7 3 5 H B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 4Mx72 Dual Bank EDO Mode DIMM • System Performance Benefits: • Performance: -Buffered inputs (except RAS, Data) |
OCR Scan |
4Mx72 11M4735HB | |
T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
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10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d | |
Contextual Info: IB M 1 3 T 4 6 4 4 M C IB M 1 3 T 1 6 4 9 N C 1M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 1 Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency j Units j 3 jf c K j Clock |
OCR Scan |
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Contextual Info: IBM11N8645H IBM11N8735H 8M x 64/72 D RAM M O D U LE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity, or ECC applications • 8Mx64, 8Mx72 Extended Data Out Page Mode DIMMs System Performance Benefits: |
OCR Scan |
IBM11N8645H IBM11N8735H 8Mx64, 8Mx72 11N8645H 11N8735H 400mil | |
Contextual Info: IB M 1 1 M 1 6 8 4 5 C B 16M x 72 Chipkill Correct DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 16Mx72 Chipkill Correct EDO DIMM • Performance: ! i^RAC i RAS Access Time jtcAC I CAS Access Time -5R I 50ns ! -6R j |
OCR Scan |
16Mx72 104ns | |
c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
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1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N |